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    SPD09P06PL G Search Results

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    SPD09P06PL G Price and Stock

    Infineon Technologies AG SPD09P06PLGBTMA1

    MOSFET P-CH 60V 9.7A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD09P06PLGBTMA1 Digi-Reel 7,333 1
    • 1 $1.44
    • 10 $0.911
    • 100 $1.44
    • 1000 $0.43124
    • 10000 $0.43124
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    SPD09P06PLGBTMA1 Cut Tape 7,333 1
    • 1 $1.44
    • 10 $0.911
    • 100 $1.44
    • 1000 $0.43124
    • 10000 $0.43124
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    SPD09P06PLGBTMA1 Reel 2,500 2,500
    • 1 -
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    • 100 -
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    • 10000 $0.38546
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    Mouser Electronics SPD09P06PLGBTMA1 2,437
    • 1 $1.18
    • 10 $0.767
    • 100 $0.533
    • 1000 $0.394
    • 10000 $0.334
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    Newark SPD09P06PLGBTMA1 Cut Tape 2,500 5
    • 1 $1.11
    • 10 $1.11
    • 100 $1.11
    • 1000 $1.11
    • 10000 $1.11
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    SPD09P06PLGBTMA1 Reel 2,500
    • 1 -
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    • 1000 -
    • 10000 $0.439
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    Rochester Electronics SPD09P06PLGBTMA1 1
    • 1 $0.316
    • 10 $0.316
    • 100 $0.297
    • 1000 $0.2686
    • 10000 $0.2686
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    TME SPD09P06PLGBTMA1 1,898 1
    • 1 $0.739
    • 10 $0.708
    • 100 $0.491
    • 1000 $0.479
    • 10000 $0.479
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    Chip One Stop SPD09P06PLGBTMA1 Cut Tape 7,201
    • 1 -
    • 10 $0.671
    • 100 $0.49
    • 1000 $0.36
    • 10000 $0.356
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    EBV Elektronik SPD09P06PLGBTMA1 11 Weeks 2,500
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    Infineon Technologies AG SPD09P06PLGXT

    Trans MOSFET P-CH 60V 9.7A 3-Pin(2+Tab) TO-252 T/R - Tape and Reel (Alt: SPD09P06PLGBTMA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SPD09P06PLGXT Reel 10 Weeks 2,500
    • 1 -
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    • 10000 $0.2676
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    Infineon Technologies AG SPD09P06PL G

    MOSFETs P-Ch -60V 9.7A DPAK-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SPD09P06PL G 2,365
    • 1 $1.1
    • 10 $0.748
    • 100 $0.521
    • 1000 $0.386
    • 10000 $0.34
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    Infineon Technologies AG SPD09P06PLG

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    Bristol Electronics SPD09P06PLG 77
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    Quest Components SPD09P06PLG 7,705
    • 1 $0.846
    • 10 $0.846
    • 100 $0.846
    • 1000 $0.846
    • 10000 $0.2961
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    ComSIT USA SPD09P06PLG 11,288
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    Infineon Technologies AG 726-SPD09P06PLGBTMA1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip Stock 726-SPD09P06PLGBTMA1 562
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    SPD09P06PL G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPD09P06PL G Infineon Technologies P-Channel MOSFETs; Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): -60.0 V; RDS (on) (max) (@10V): 250.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; Original PDF
    SPD09P06PLGBTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 9.7A TO252-3 Original PDF

    SPD09P06PL G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7696A

    Abstract: No abstract text available
    Text: SPD09P06PL SPU09P06PL SIPMOS =Power-Transistor Product Summary Feature P-Channel •P-channel Enhancementmode mode •Enhancement •Logic LogicLevel Level prueb •175°C 175°C operating operating temperature temperature • Avalanche rated  Avalanche rated


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    SPD09P06PL SPU09P06PL PG-TO251-3 PG-TO252-3 SPU09P06PL PG-TO252-3 70ontain 7696A PDF

    7696A

    Abstract: SPD09P06PL G
    Text: SPD09P06PL G SIPMOS =Power-Transistor Product Summary Feature P-Channel •P-channel Enhancementmode mode •Enhancement •Logic LogicLevel Level prueb •175°C 175°C operating operating temperature temperature • Avalanche rated  Avalanche rated


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    SPD09P06PL PG-TO252-3 7696A SPD09P06PL G PDF

    SPD09P06PL

    Abstract: SPD09P06PL G
    Text: SPD09P06PL G SIPMOS =Power-Transistor Product Summary Feature P-Channel •P-channel Enhancementmode mode •Enhancement •Logic LogicLevel Level prueb •175°C 175°C operating operating temperature temperature • Avalanche rated  Avalanche rated


    Original
    SPD09P06PL PG-TO252-3 SPD09P06PL G PDF

    Q67042-S4020

    Abstract: P-TO251-3-1 P-TO252 SPD09P06PL SPU09P06PL
    Text: SPD09P06PL SPU09P06PL Preliminary data SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.25 W · Avalanche rated Continuous drain current ID -9.7


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    SPD09P06PL SPU09P06PL P-TO252 Q67042-S4007 P-TO251-3-1 Q67042-S4020 Q67042-S4020 P-TO252 SPD09P06PL SPU09P06PL PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD09P06PL SIPMOS =Power-Transistor Product Summary Feature P-Channel •P-channel Enhancementmode mode •Enhancement •Logic LogicLevel Level prueb •175°C 175°C operating operating temperature temperature • Avalanche rated  Avalanche rated


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    SPD09P06PL PG-TO252-3 SPD09P06PL PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD09P06PL SIPMOS =Power-Transistor Product Summary Feature P-Channel •P-channel Enhancementmode mode •Enhancement •Logic LogicLevel Level prueb •175°C 175°C operating operating temperature temperature • Avalanche rated  Avalanche rated


    Original
    SPD09P06PL PG-TO252-3 SPD09P06PL PDF

    SPD09P06PL G

    Abstract: No abstract text available
    Text: SPD09P06PL G SPU09P06PL G SIPMOS =Power-Transistor Product Summary Feature  P-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS -60 RDS on 0.25  ID -9.7 A PG-TO251-3 V PG-TO252-3 Drain pin 2 Type


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    SPD09P06PL SPU09P06PL PG-TO251-3 PG-TO252-3 SPU09P06PL PG-TO252-3 SPD09P06PL G PDF

    s4020

    Abstract: P-TO251-3-1 P-TO252 SPD09P06PL SPU09P06PL Q67042-S4020 SPD09P06PL G
    Text: SPD09P06PL SPU09P06PL Final data SIPMOS =Power-Transistor Product Summary Feature  P-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS -60 RDS on 0.25  ID -9.7 A P-TO251-3-1 V P-TO252 Drain pin 2


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    SPD09P06PL SPU09P06PL P-TO251-3-1 P-TO252 Q67042-S4007 Q67042-S4020 s4020 P-TO251-3-1 P-TO252 SPD09P06PL SPU09P06PL Q67042-S4020 SPD09P06PL G PDF

    SPD09P06PL

    Abstract: SPU09P06PL
    Text: SPD09P06PL SPU09P06PL SIPMOS =Power-Transistor Product Summary Feature  P-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS -60 RDS on 0.25  ID -9.7 A PG-TO251-3-1 V PG-TO252 Drain pin 2 Type


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    SPD09P06PL SPU09P06PL PG-TO251-3-1 PG-TO252 Q67042-S4007 PG-TO251-3-1 Q67042-S4020 SPD09P06PL SPU09P06PL PDF

    Q67042-S4007

    Abstract: Q67042-S4020
    Text: SPD09P06PL SPU09P06PL SIPMOS =Power-Transistor Product Summary Feature  P-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS -60 RDS on 0.25  ID -9.7 A P-TO251-3-1 V P-TO252 Drain pin 2 Type Package


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    SPD09P06PL SPU09P06PL P-TO251-3-1 P-TO252 SPU09P06PL P-TO252 Q67042-S4007 Q67042-S4020 Q67042-S4020 PDF

    P-TO251-3

    Abstract: SPD09P06PL SPU09P06PL SPD09P06PL G
    Text: SPD09P06PL SPU09P06PL SIPMOS =Power-Transistor Product Summary Feature  P-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated P-TO251-3 VDS -60 V RDS on 0.25  ID -9.7 A P-TO252-3 Drain pin 2 Type Package


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    SPD09P06PL SPU09P06PL P-TO251-3 P-TO252-3 P-TO251-3 SPD09P06PL SPU09P06PL SPD09P06PL G PDF

    7696A

    Abstract: No abstract text available
    Text: SPD09P06PL SPU09P06PL SIPMOS =Power-Transistor Product Summary Feature  P-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS -60 RDS on 0.25  ID -9.7 A PG-TO251-3-1 V PG-TO252 2 1 123 3 Drain pin 2


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    SPD09P06PL SPU09P06PL PG-TO251-3-1 PG-TO252 SPU09P06PL Q67042-S4007 PG-TO251-3-1 Q67042-S4020 7696A PDF

    3047 mosfet

    Abstract: SPD09P06PL equivalent MBRD360 mosfet 3047 mosfet 3067 TLE6389G50-1 DO3340P-473 SPD09P06PL mosfet L 3055 motorola 6389
    Text: Step-Down DC/DC Controller TLE 6389 Target Datasheet Features • • • • • • • • • • • • Operation from 5V to 60V Input Voltage 100% Maximum Duty Cycle Efficiency >90% Output Current up to 3A Less than 100µA Quiescent Current 2µA Max Shutdown Current


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    350kHz P-DSO-14-3, 220nF TLE6389G50-1 3047 mosfet SPD09P06PL equivalent MBRD360 mosfet 3047 mosfet 3067 TLE6389G50-1 DO3340P-473 SPD09P06PL mosfet L 3055 motorola 6389 PDF

    3047 mosfet

    Abstract: mosfet L 3055 motorola mosfet 3047 G331 MOSFETs 3041 TLE6389-2 3049 dc-dc spd09p MBRD360
    Text: Step-Down DC/DC Controller TLE 6389 Target Datasheet Features • • • - P-DSO-14-3, -4, -9, -11 RSENSE= 0.05 CIN1 = 100 µF SI1 L1 = 47 µH M1 VOUT IOUT N • Operation from 5V to 60V Input Voltage 100% Maximum Duty Cycle Efficiency >90% Output Current up to 3A


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    350kHz P-DSO-14-3, 220nF TLE6389G50-1 D-81541 3047 mosfet mosfet L 3055 motorola mosfet 3047 G331 MOSFETs 3041 TLE6389-2 3049 dc-dc spd09p MBRD360 PDF

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


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    SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP PDF

    BUP213

    Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
    Text: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S


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    O-218AB O-220AB O-220 O-220FP O-247 O-262 O-252 O-263 OT-323 OT-363 BUP213 BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327 PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


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    Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J PDF

    107 10V epcos

    Abstract: 613SPV BSO613SPV MBRD360 epcos 107 10V 48v to 24v buck p-mosfet bsp TLE6389G50-1 B82479-A1473-M BSP613P
    Text: Step-Down DC/DC Controller TLE 6389 Preliminary data sheet 1 Overview 1.1 Features • • • • • • • • • • • • Input voltage range from < 5V up to 60V Output voltage versions: 5V fixed and adjustable Output voltage accuracy: 3% Load current peak determined by sense resistor


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    350kHz 107 10V epcos 613SPV BSO613SPV MBRD360 epcos 107 10V 48v to 24v buck p-mosfet bsp TLE6389G50-1 B82479-A1473-M BSP613P PDF

    QSH-030-01-F-D-A

    Abstract: Infineon Tricore TC1762 BOOT tc1766 C701 T C709 diode Robinson Nugent Crystal oscillator r315 OCDS resistor r336 r331 r322 r330 r1 R726
    Text: U s er’s Ma nual, V 1.0, Ju ne 2005 TriBoard TC176X H a r d w a r e M an u a l T C 1 7 6 X . 3 0 0 M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2005-06 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany


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    TC176X D-81541 TC1762 TC1764 TC1766 TC176X QSH-030-01-F-D-A Infineon Tricore TC1762 BOOT C701 T C709 diode Robinson Nugent Crystal oscillator r315 OCDS resistor r336 r331 r322 r330 r1 R726 PDF

    6389-3GV50

    Abstract: GV 475 diode GV50 gv-50 6389-2gv 63893GV50 6389GV 613spv 3gv50 MBRD360
    Text: Step-Down DC/DC Controller TLE 6389 Datasheet 1 Overview 1.1 Features • • • • • • • • • • • • • 1 Input voltage range from < 5V up to 60V Output voltage: 5V fixed or adjustable 7V to 15V) Output voltage accuracy: 3% Output current up to 2.3A


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    350kHz P-DSO-14-3, 6389-3GV50 GV 475 diode GV50 gv-50 6389-2gv 63893GV50 6389GV 613spv 3gv50 MBRD360 PDF

    613SPV

    Abstract: TLE 427 marking CDM2 MBRD360 GV 475 diode TLE6389-2 PG-DSO-14-1 p-mosfet bsp B82479-A1473-M BSP613P
    Text: Step-Down DC/DC Controller 1 Overview 1.1 Features • • • • • • • • • • • • • • • 1 TLE 6389 Input voltage range from < 5V up to 60V Output voltage: 5V fixed or adjustable 7V to 15V) Output voltage accuracy: 3% Output current up to 2.3A


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    360kHz 613SPV TLE 427 marking CDM2 MBRD360 GV 475 diode TLE6389-2 PG-DSO-14-1 p-mosfet bsp B82479-A1473-M BSP613P PDF

    MBRD360

    Abstract: No abstract text available
    Text: Step-Down DC/DC Controller 1 Overview 1.1 Features • • • • • • • • • • • • • • • 1 TLE 6389 Input voltage range from < 5V up to 60V Output voltage: 5V fixed or adjustable 7V to 15V) Output voltage accuracy: 3% Output current up to 2.3A


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    360kHz MBRD360 PDF

    P36-103-11R9

    Abstract: CB605 r741 QSH-030-01-F-D-A on semiconductor r643 on semiconductor r639 smd diode OE R612 R645 RC28F128K3C115 A12B1
    Text: U s er’s Ma nual, V 1.2, Ju ne 2004 TriBoard TC1130 H a r d w a r e M an u a l T C 1 1 3 0 - 3 0 0 M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2004-06 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany


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    TC1130 D-81541 TC1130 RS232 P36-103-11R9 CB605 r741 QSH-030-01-F-D-A on semiconductor r643 on semiconductor r639 smd diode OE R612 R645 RC28F128K3C115 A12B1 PDF

    Diode smd code sm 97

    Abstract: VPT09051 SPD09P06PL SPU09P06PL Q67042-S4020 VPT09050
    Text: Infineon SPD09P06PL SPU09P06PL Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage '/ ds -60 V • Enhancement mode Drain-source on-state resistance ^DS on 0.25 Q • Avalanche rated Continuous drain current


    OCR Scan
    SPD09P06PL SPU09P06PL VPT09050 VPT09051 SPD09P06PL P-T0252 Q67042-S4007 SPU09P06PL P-T0251-3-1 Q67042-S4020 Diode smd code sm 97 VPT09051 Q67042-S4020 PDF