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    SPIN SEMICONDUCTOR Search Results

    SPIN SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SPIN SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Spin FV-1

    Abstract: echo delay reverb ic fv-1 reverb FV-1 SPIN SPN1001-DS-010408 echo delay reverb echo reverb ic Spin Semiconductor reverb chip ic reverb
    Text: Spin FV-1 Reverb IC Semiconductor Featuring Spin Semiconductor Virtual Analog Technology Spin Semiconductor FV-1 Reverb IC APPLICATIONS FEATURES ○ Integrated stereo ADC and DAC ○ 8 internal demonstration programs + 8 external programs ○ Easy customization with external EEPROM


    Original     		PDF 48KHz SPN1001 SPN1001-DS-010408 Spin FV-1 echo delay reverb ic fv-1 reverb FV-1 SPIN echo delay reverb echo reverb ic Spin Semiconductor reverb chip ic reverb

    FV-1

    Abstract: No abstract text available
    Text: Spin FV-1 Reverb IC Semiconductor Featuring Spin Semiconductor Virtual Analog Technology Spin Semiconductor FV-1 Reverb IC FEATURES ○ Integrated stereo ADC and DAC ○ 8 internal demonstration programs + 8 external programs ○ Easy customization with external EEPROM


    Original     		PDF 48KHz SPN1001 SPN1001-DS-150413 FV-1

    echo delay reverb ic

    Abstract: delay reverb ic ic reverb echo reverb ic digital reverb ic reverb IC echo delay reverb reverb chip echo reverb ic guitar Spin FV-1
    Text: Spin FV­1 Reverb IC Semiconductor Spin Semiconductor Featuring Spin Semiconductor Virtual Analog Technology FV­1 Reverb IC FEATURES ○ Integrated stereo ADC and DAC ○ 8 internal demonstration programs + 8 external


    Original     		PDF 48KHz SPN1001 SPN1001DS120310 echo delay reverb ic delay reverb ic ic reverb echo reverb ic digital reverb ic reverb IC echo delay reverb reverb chip echo reverb ic guitar Spin FV-1

    1N916

    Abstract: MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Text: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original     		PDF MBT3904DW1T1/D MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 1N916 MBT3904DW1T1 MBT3906DW1T1

    MBT3906DWITI

    Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original     		PDF MBT3904DWlT1/D MBT3904DW1TI, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DWI MBT3906DWI MBT3946DWI 14WI-247 MBT3906DWITI MBT390 MBT3946DW1 MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI

    MMBD701LT1

    Abstract: No abstract text available
    Text: ON Semiconductort MMSD301T1 MMSD701T1 SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications.


    Original     		PDF OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 MMSD301T1 MMSD701T1

    MMBD301LT1

    Abstract: MMBD701LT1 MMSD301T1 MMSD701T1 MMSD101T1 marking 8b sod-123
    Text: MOTOROLA Order this document by MMSD301T1/D SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for


    Original     		PDF MMSD301T1/D OD-123 MMSD301T1 MMSD701T1 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 DiodesMMSD301T1/D MMBD301LT1 MMSD301T1 MMSD101T1 marking 8b sod-123

    MBT3906DW

    Abstract: 1N916 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Text: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original     		PDF MBT3904DW1T1/D MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3906DW 1N916 MBT3904DW1T1 MBT3906DW1T1

    sod123 xt

    Abstract: No abstract text available
    Text: ON Semiconductort MMSD301T1 MMSD701T1 SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications.


    Original     		PDF OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 OT-23 MMSD301T1 MMSD701T1 OD-123 sod123 xt

    MMBD701LT1

    Abstract: MMBD301LT1 MMSD301T1 MMSD701T1 sod123 xt
    Text: ON Semiconductort MMSD301T1 MMSD701T1 SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications.


    Original     		PDF MMSD301T1 MMSD701T1 OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 r14525 MMSD301T1/D MMBD301LT1 MMSD301T1 sod123 xt

    MMBD301LT1

    Abstract: MMBD701LT1 MMSD301T1 MMSD701T1
    Text: ON Semiconductort MMSD301T1 MMSD701T1 SOD-123 SCHOTTKY Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications.


    Original     		PDF MMSD301T1 MMSD701T1 OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 r14525 MMSD301T1/D MMBD301LT1 MMSD301T1

    MBT3904DW1T1

    Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1
    Text: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


    Original     		PDF MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3904DW1T1 SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1

    Untitled

    Abstract: No abstract text available
    Text: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


    Original     		PDF MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

    MBT3904DW1T1G

    Abstract: No abstract text available
    Text: MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in


    Original     		PDF MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G MBT3904DW1T1G MBT3904DW2T1G OT-23/SOT-323 OT-363 OT-363/SC-88/ SC70-6 MBT3904DW1T1/D

    image processing asic

    Abstract: envision power board Cyclone camera link ppds altera memory flash
    Text: Design more features before the next re-spin with Altera PLDs Altera in portable entertainment The MAX II device helps us stay competitive in the extremely pricesensitive consumer electronics market. We have been able to implement digital signal processing


    Original     		PDF SS-01013-1 image processing asic envision power board Cyclone camera link ppds altera memory flash

    IBM efuse

    Abstract: IBM 11LP rvt capacitor 11-LP ibm sram
    Text: IBM Global Engineering Solutions CMOS 11LP: A new spin on low-power IBM technology Technology and support: A winning combination for low-power applications IBM Global Engineering Solutions extends the range of its 45-nm technology offerings with CMOS 11LP, an


    Original     		PDF 45-nm TGD03012-USEN-01 IBM efuse IBM 11LP rvt capacitor 11-LP ibm sram

    NST3946DP6T5G

    Abstract: No abstract text available
    Text: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963


    Original     		PDF NST3946DP6T5G NST3946DP6T5G OT-23/SOT-323/SOT-563 OT-963 NST3946DP6T5G* NST3946DP6/D

    Untitled

    Abstract: No abstract text available
    Text: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963


    Original     		PDF NST3946DP6T5G NST3946DP6T5G 23/SOTâ 323/SOTâ NST3946DP6T5G* NST3946DP6/D

    MIL-STD-750 method 1037

    Abstract: BC237 BF245 MPF4856
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other


    Original     		PDF OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 MMSD301T1 MMSD701T1 m218A MIL-STD-750 method 1037 BC237 BF245 MPF4856

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


    Original     		PDF MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

    schottky diode sod-123 marking code 12

    Abstract: MMBD301LT1 MMBD701LT1 MMSD301T1 MMSD301T1G MMSD701T1 MMSD701T1G marking AAAA sot23
    Text: MMSD301T1, MMSD701T1 Preferred Device SOD−123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications.


    Original     		PDF MMSD301T1, MMSD701T1 OD-123 MMSD701T1 MMBD301LT1, MMBD701LT1 OT-23 OD-123 MMSD301T1/D schottky diode sod-123 marking code 12 MMBD301LT1 MMSD301T1 MMSD301T1G MMSD701T1G marking AAAA sot23

    NPN PNP sot-563

    Abstract: NST3946DP6T5G
    Text: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963


    Original     		PDF NST3946DP6T5G NST3946DP6T5G OT-23/SOT-323/SOT-563 OT-963 NST3946DP6T5G* NST3946DP6/D NPN PNP sot-563

    TA8517F

    Abstract: No abstract text available
    Text: TOSHIBA TA8517F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8517F HIGH SPEED DUAL COMPARATOR FEATURES • Standard + 5V power supply • TTL OUT • FLP-1 Spin • Inhibit function EQUIVALENT CIRCUIT BLOCK DIAGRAM & PIN CONNECTION TOP VIEW


    OCR Scan     		PDF TA8517F TA8517 FLP-16pin TA8517F

    MMSD101T1

    Abstract: sod123 xt
    Text: M O TO RO LA O rder th is docum ent by MMSD101T1/D SEMICONDUCTOR TECHNICAL DATA MMSD101T1 MMSD301T1 MMSD701T1 SOD-123 Schottky Barrier Diodes The MMSD101T1, MMSD301T1, and MMSD701T1 devices are spin-offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT-23 devices. They


    OCR Scan     		PDF MMSD101T1/D OD-123 MMSD101T1, MMSD301T1, MMSD701T1 MMBD101LT1, MMBD301LT1, MMBD701LT1 OT-23 MMSD101T1 sod123 xt