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Catalog Datasheet	MFG & Type	PDF	Document Tags
N-Channel Enhancement Mode MOSFET Abstract: dc inverter MARKING QG 6 PIN SPN3458 Text: SPN3458 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3458 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	PDF	SPN3458 SPN3458 N-Channel Enhancement Mode MOSFET dc inverter MARKING QG 6 PIN

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MFG & Type

PDF

Document Tags

N-Channel Enhancement Mode MOSFET

Abstract: dc inverter MARKING QG 6 PIN SPN3458
Text: SPN3458 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3458 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Original

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SPN3458 SPN3458 N-Channel Enhancement Mode MOSFET dc inverter MARKING QG 6 PIN