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    Infineon Technologies AG SPU04N60S5BKMA1

    MOSFET N-CH 600V 4.5A TO251-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPU04N60S5BKMA1 Tube 1,500
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    • 10000 $0.65663
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    Siemens SPU04N60S5

    4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SPU04N60S5 1,192
    • 1 $0.8775
    • 10 $0.8775
    • 100 $0.4095
    • 1000 $0.3656
    • 10000 $0.3656
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    SPU04N60S5 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPU04N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPU04N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO251-3; VDS (max): 600.0 V; Package: IPAK (TO-251); RDS(ON) @ TJ=25°C VGS=10: 950.0 mOhm; ID(max) @ TC=25°C: 4.5 A; IDpuls (max): 0.375 A; Original PDF
    SPU04N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, I-PAK, RDSon=0.95Ohm, 4.5A Original PDF
    SPU04N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPU04N60S5BKMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 4.5A TO-251 Original PDF

    SPU04N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    04N60S5

    Abstract: SPD04N60S5 P-TO251-3-1 P-TO252 SPU04N60S5 04N60
    Text: SPU04N60S5 SPD04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 SPU04N60S5 P-TO251-3-1 P-TO252 04N60S5 Q67040-S4228 04N60S5 SPD04N60S5 P-TO251-3-1 P-TO252 04N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPU04N60S5 SPD04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPU04N60S5 SPD04N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4228 Q67040-S4202 PDF

    04n60s5

    Abstract: No abstract text available
    Text: SPU04N60S5 SPD04N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.95 Ω • Optimized capacitances


    Original     		SPU04N60S5 SPD04N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4228 Q67040-S4202 04n60s5 PDF

    04n60s5

    Abstract: 04N60 P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5 Q67040-S4202 597 smd transistor
    Text: SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		SPU04N60S5 SPD04N60S5 P-TO252 P-TO251-3-1 SPUx6N60S5/SPDx6N60S5 Q67040-S4228 04N60S5 04n60s5 04N60 P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5 Q67040-S4202 597 smd transistor PDF

    04n60s5

    Abstract: SPD04N60S5
    Text: SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 P-TO251-3-1 P-TO252 04N60S5 04N60S5 Q67040-S4228 SPD04N60S5 PDF

    04n60s5

    Abstract: No abstract text available
    Text: SPU04N60S5 SPD04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPU04N60S5 SPD04N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4228 Q67040-S4202 04n60s5 PDF

    04n60s5

    Abstract: 04N60 TRANSISTOR SMD MARKING CODE WS Q67040-S4202 SPU04N60S5 SPD04N60S5
    Text: SPU04N60S5 SPD04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		SPU04N60S5 SPD04N60S5 PG-TO252 PG-TO251 Q67040-S4228 04N60S5 04n60s5 04N60 TRANSISTOR SMD MARKING CODE WS Q67040-S4202 SPU04N60S5 SPD04N60S5 PDF

    04N60S5

    Abstract: P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5
    Text: SPU04N60S5 SPD04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPU04N60S5 SPD04N60S5 P-TO252 P-TO251-3-1 Q67040-S4228 04N60S5 04N60S5 P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPU04N60S5 SPD04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		SPU04N60S5 SPD04N60S5 PG-TO252 PG-TO251 SPD04N60S5 PG-TO251 Q67040-S4228 Q67040-S4202 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPU04N60S5 SPD04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		SPU04N60S5 SPD04N60S5 PG-TO252. PG-TO251. SPD04N60S5 Q67040-S4228 Q67040-S4202 PDF

    04N60S5

    Abstract: P-TO252 SPD04N60S5 SPU04N60S5
    Text: SPU04N60S5 SPD04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances


    Original     		SPU04N60S5 SPD04N60S5 P-TO252. P-TO251. Q67040-S4228 04N60S5 04N60S5 P-TO252 SPD04N60S5 SPU04N60S5 PDF

    04N60S5

    Abstract: No abstract text available
    Text: SPU04N60S5 SPD04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		SPU04N60S5 SPD04N60S5 PG-TO252. PG-TO251. SPD04N60S5 Q67040-S4228 Q67040-S4202 04N60S5 PDF

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    6 PIN SMD IC FOR SMPS

    Abstract: 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet
    Text: Version 1.1 February 2001 Application Note AN-CoolMOS-03 HOW TO SELECT THE RIGHT COOLMOS AND ITS POWER HANDLING CAPABILITY Author: Luo Junyang, Jeoh Meng Kiat, Marco Puerschel and Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion


    Original     		AN-CoolMOS-03 Room14J1 Room1101 6 PIN SMD IC FOR SMPS 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet PDF

    irfp460 dc welding circuit diagram

    Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers


    Original     		AN-CoolMOS-02 Room14J1 Room1101 irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    UPS SIEMENS

    Abstract: SPW17N80C2 500 coolmos SPD01N60S5 SPN01N60S5 A1040 to-252 SPN04N60C2 Infineon CoolMOS SPU01N60S5 SPD02N60S5
    Text: C o o l M O S TM C 2 COOL & FAST C o o l M O S TM C 2 the second generation www.infineon.com Never stop thinking. C o o l M O S TM C 2 the second generation Infineon’s introduction of the 600V CoolMOSTM C2 technology is a breakthrough design for power conversion systems such as


    Original     		B152-H7641-X-X-7600 UPS SIEMENS SPW17N80C2 500 coolmos SPD01N60S5 SPN01N60S5 A1040 to-252 SPN04N60C2 Infineon CoolMOS SPU01N60S5 SPD02N60S5 PDF

    BUP213

    Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
    Text: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S


    Original     		O-218AB O-220AB O-220 O-220FP O-247 O-262 O-252 O-263 OT-323 OT-363 BUP213 BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    BUZ78

    Abstract: SIPC69N60C3 P-Channel Depletion Mosfets sipc01n80c2 SPNA2N80C2 buz22 SIPC26N60C3 SIPC26N80C3 BTS443P BTS840S2
    Text: File name Products mini-PROFET BTS308 BTS409 BTS410-H2 BTS640S2 BTS443P BTS650P BTS6510 BSP762 TEMPFET / Speed TEMPFET HITFET BTS244-Z BSP78 Smart Motor Bridges + Driver ICs Bridges for Throttle Control TLE5209GP High Voltage MOSFETs CoolMOS Power MOSFETs 600V SPU01N60S5


    Original     		BTS308 BTS409 BTS410-H2 BTS640S2 BTS443P BTS650P BTS6510 BSP762 BTS244-Z BSP78 BUZ78 SIPC69N60C3 P-Channel Depletion Mosfets sipc01n80c2 SPNA2N80C2 buz22 SIPC26N60C3 SIPC26N80C3 BTS443P BTS840S2 PDF

    SIPC69N60C3

    Abstract: sipc01n80c2 SPA11N60C3 equivalent SIPC26N80C3 SPW20N60S5 equivalent SIPC14N60C3 SIPC16N80C3 SPA03N60S5 SPP11N60S5 equivalent CoolMOS Power Transistor
    Text: Saber Libraries for CoolMOS Power Transistors Models provided by Infineon are not warranted by Infineon as fully representing all the specifications and operating characteristics of the semiconductor product to which the model relates. The models describe the characteristics of typical devices. In all cases, the


    Original     		tPA20N60C3 SPB20N60C3 SPP20N60C3 SPW20N60C3 SIPC26N60C3 SPW47N60C3 SIPC69N60C3 OT223 SPNA02N80C2 SIPC01N80C2 SIPC69N60C3 sipc01n80c2 SPA11N60C3 equivalent SIPC26N80C3 SPW20N60S5 equivalent SIPC14N60C3 SIPC16N80C3 SPA03N60S5 SPP11N60S5 equivalent CoolMOS Power Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 SPU04N60S5 P-T0251 04N60S5 Q67040-S4228 P-T0252 PDF