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    SQJ840EP Price and Stock

    Vishay Siliconix SQJ840EP-T1_GE3

    MOSFET N-CH 30V 30A PPAK SO-8
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    DigiKey SQJ840EP-T1_GE3 Reel 3,000
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    Vishay Intertechnologies SQJ840EP-T1_GE3

    Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ840EP-T1_GE3)
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    Avnet Americas SQJ840EP-T1_GE3 Reel 20 Weeks 3,000
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    SQJ840EP-T1_GE3 Reel 3,000
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    Mouser Electronics SQJ840EP-T1_GE3 3,000
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    Newark SQJ840EP-T1_GE3 Cut Tape 41 1
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    SQJ840EP-T1_GE3 Reel 3,000
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    Bristol Electronics SQJ840EP-T1_GE3 2,990
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    Quest Components SQJ840EP-T1_GE3 2,392
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    EBV Elektronik SQJ840EP-T1_GE3 21 Weeks 3,000
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    Vishay Intertechnologies SQJ840EP-T1-GE3

    MOSFETs RECOMMENDED ALT SQJ8
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    TTI SQJ840EP-T1-GE3 Reel 3,000 3,000
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    SQJ840EP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQJ840EP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A PPAK 8SOIC Original PDF
    SQJ840EP-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 30A PPAK SO-8 Original PDF

    SQJ840EP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ840EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0093 RDS(on) (Ω) at VGS = 4.5 V 0.0138 ID (A)


    Original
    SQJ840EP AEC-Q101 2002/95/EC SQJ840EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ840EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0093 RDS(on) (Ω) at VGS = 4.5 V 0.0138 ID (A)


    Original
    SQJ840EP AEC-Q101 2002/95/EC SQJ840EP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ840EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0093 RDS(on) (Ω) at VGS = 4.5 V 0.0138 ID (A)


    Original
    SQJ840EP AEC-Q101 2002/95/EC SQJ840EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ840EP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    SQJ840EP AN609, 21-May-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ840EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0093 RDS(on) (Ω) at VGS = 4.5 V 0.0138 ID (A)


    Original
    SQJ840EP AEC-Q101 2002/95/EC SQJ840EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ840EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0093 RDS(on) (Ω) at VGS = 4.5 V 0.0138 ID (A)


    Original
    SQJ840EP AEC-Q101 2002/95/EC SQJ840EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ840EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0093 RDS(on) (Ω) at VGS = 4.5 V 0.0138 ID (A)


    Original
    SQJ840EP AEC-Q101 2002/95/EC SQJ840EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ840EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0093 RDS(on) () at VGS = 4.5 V 0.0138 ID (A) • TrenchFET Power MOSFET


    Original
    SQJ840EP 2002/95/EC AEC-Q101 SQJ840EP-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ840EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0093 RDS(on) () at VGS = 4.5 V 0.0138 ID (A) • TrenchFET Power MOSFET


    Original
    SQJ840EP 2002/95/EC AEC-Q101 SQJ840EP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ840EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0093 RDS(on) (Ω) at VGS = 4.5 V 0.0138 ID (A)


    Original
    SQJ840EP AEC-Q101 2002/95/EC SQJ840EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQJ840EP www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    SQJ840EP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    DPAK/TO-252

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the


    Original
    Ups-2726 VMN-PL0469-1311 DPAK/TO-252 PDF

    sq4435

    Abstract: SQP120N10-09
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.


    Original
    VMN-PL0469-1505 sq4435 SQP120N10-09 PDF

    SQ2315ES

    Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects


    Original
    AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/


    Original
    AEC-Q101 VMN-SG2151-1212 PDF

    SQ3427

    Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
    Text: V i s h ay I n terte c h n olo g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ • Application notes: http://www.vishay.com/mosfets/automotive-mosfets/


    Original
    AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309 PDF