Untitled
Abstract: No abstract text available
Text: CERLED SMD Chip Detector Photo Pin Diode SR 10 DE-B -H* *RoHS-Compliant Description Features and Benefits The solder pads provide an excellent heat sink. On special request also available with daylight filter SR10DE-B-DLF . Ideal for sensor applications.
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SR10DE-B-DLF)
SR10DE)
DTS0407
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KP-1608P1BT
Abstract: KP-1608P1C
Text: SMD INFRARED EMITTING DIODES & PHOTOTRANSISTORS Kingbright KM2520F3C03 Part No. KP-1608P1C Material Wavelength nm Po(mW/sr) @20mA *50mA Lens Type Min. Viewing Angle Typ. Dimension 2θ1/2 2mm KM2520F3C03 KM2520SF4C03 GaAs GaAlAs 940 880 2 6 30° *10 *15
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KM2520F3C03
KP-1608P1C
KM2520SF4C03
KP-1608P1C
KP-1608P1BT
KP-1608P1
100uA,
100mW
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diode Sr
Abstract: DTS1005 PerkinElmer light cerled
Text: D A T A S H E E T CERLED SMD Chip Detector Photo Pin Diode SR 10 DE-B Description Features and Benefits The solder pads provide an excellent heat sink. On special request also available with daylight filter SR10DE-B-DLF . Ideal for sensor applications.
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SR10DE-B-DLF)
SR10DE)
DTS1005
diode Sr
DTS1005
PerkinElmer light
cerled
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KPA-3010F3C
Abstract: KP-2012F3C
Text: SMD INFRARED EMITTING DIODES KP-1608F3C 0603 Part No. KP-2012F3C(0805) Material λP (nm) Lens Type KP-3216F3C(1206) Po (mW/sr) @20mA Min. Typ. View ing Angle KPA-3010F3C(1104) Dimension 2θ θ1/2 1.6mm x 0.8mm x 1.1mm (0603) KP-1608F3C GaAs 940 water clear
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KP-1608F3C
KP-2012F3C
KP-3216F3C
KPA-3010F3C
KP-1608F3C
KP-1608SF4C
KP-2012F3C
KP-2012SF4C
KP-3216F3C
KP-3216SF4C
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Untitled
Abstract: No abstract text available
Text: CERLED SMD Chip Detector Photo Pin Diode SR 10 DE -H* *RoHS-Compliant Description Features and Benefits The solder pads provide an excellent heat sink. On special request also available with daylight filter SR10DE-DLF . Ideal for sensor applications. Available on special order in 8 mm blister
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SR10DE-DLF)
SR10DE-B)
DTS0407
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smd 0805 infrared
Abstract: phototransistor smd
Text: SMD Infrared Emitting Diodes Electrical/Optical Data S h ap e Part No. 2.0x1.25x1.1mm 0805 XZTNI54W Material (Emitted Color) GaAs L en s Peak Wave Length (nm) Water Clear 940 Vf (V) If=20mA Po=(mW/sr) If=20mA *50mA Typ. Max. Min. Typ. 1.2 1.6 0.5 1 View ing
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XZTNI54W
XZTHI54W
XZTNI55W-3
XZTHI55W-3
XZTNI45W
XZTHI45W
XZTNI76W
XZTHI76W
smd 0805 infrared
phototransistor smd
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Untitled
Abstract: No abstract text available
Text: SMD INFRARED EMITTING DIODES KPL-3015F3C 1106 Part No. KA-3528AF3C Material λP (nm) Lens Type KM2520F3C03 Po (mW/sr) View ing @20mA *50mA Angle Min. Typ. Dimension 2θ θ 1/2 3.0mm x 1.5mm x 1.4mm (1106) KPL-3015F3C GaAs 940 water clear 0.4 1.2 70° KPL-3015SF4C
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KPL-3015F3C
KA-3528AF3C
KM2520F3C03
KPL-3015F3C
KPL-3015SF4C
KA-3528AF3C
KA-3528ASF4C
KM2520F3C03
KM2520SF4C03
880le
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PerkinElmer Optoelectronics
Abstract: diode Sr DTS1005
Text: D A T A S H E E T CERLED SMD Chip Detector Photo Pin Diode SR 10 DE Description Features and Benefits The solder pads provide an excellent heat sink. On special request also available with daylight filter SR10DE-DLF . Ideal for sensor applications. Available on special order in 8 mm blister
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SR10DE-DLF)
SR10DE-B)
DTS1005
PerkinElmer Optoelectronics
diode Sr
DTS1005
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SR2030CT-G
Abstract: SR2040CT-G SR2050CT-G SR2060CT-G SR2080CT-G SR20100CT-G SR20150CT-G
Text: Comchip Schottky Barrier Rectifiers SMD Diode Specialist SR2030CT-G Thru. SR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.
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SR2030CT-G
SR20150CT-G
O-220AB
O-220AB,
QW-BB056
SR2030CT-G
SR2030CT
SR2040CT-G
SR2040CT
SR2050CT-G
SR2040CT-G
SR2050CT-G
SR2060CT-G
SR2080CT-G
SR20100CT-G
SR20150CT-G
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Rectifiers SR2030CT-G Thru. SR20150CT-G Comchip SMD Diode Specialist Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.
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SR2030CT-G
SR20150CT-G
O-220AB
O-220AB
QW-BB056
SR2030CT-G
SR2030CT
SR2040CT-G
SR2040CT
SR2050CT-G
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SR520-HF
Abstract: SR5100-HF sr5 diode
Text: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-HF Thru. SR5200-HF Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device Halogen Free DO-27 Features 0.052 1.30 0.048(1.20) -Axial lead type devices for through hole design. -Low power loss, high efficiency.
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SR520-HF
SR5200-HF
DO-27
MIL-STD-19500/228
DO-201AD/DO-27
SR520-HF
SR540-HF
SR560-HF
SR5100-HF
sr5 diode
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sr5 diode
Abstract: No abstract text available
Text: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-HF Thru. SR5200-HF Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device Halogen Free DO-27 Features 0.052 1.30 0.048(1.20) -Axial lead type devices for through hole design. -Low power loss, high efficiency.
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SR520-HF
SR5200-HF
DO-27
MIL-STD-19500/228
DO-201AD/DO-27
SR520-HF
SR540-HF
SR560-HF
sr5 diode
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Untitled
Abstract: No abstract text available
Text: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR320-HF Thru. SR3200-HF Forward current: 3.0A Reverse voltage: 20 to 200V RoHS Device Halogen Free DO-27 Features 0.052 1.30 0.048(1.20) -Axial lead type devices for through hole design. -Low power loss, high efficiency.
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SR320-HF
SR3200-HF
DO-27
MIL-STD-19500/228
DO-201AD/DO-27
UL94V-0
SR320-HF
SR340-HF
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SR520-G
Abstract: SR540-G SR560-G SR5100-G SR5150-G SR5200-G diode SMD MARKING CODE r5
Text: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-G Thru. SR5200-G Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device DO-27 Features -Axial lead type devices for through hole design. -Low power loss, high efficiency. -High current capability, Low forward voltage drop.
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SR520-G
SR5200-G
DO-27
MIL-STD-19500/228
DO-201AD/DO-27
UL94V-0
SR520-G
SR540-G
SR540-G
SR560-G
SR5100-G
SR5150-G
SR5200-G
diode SMD MARKING CODE r5
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Untitled
Abstract: No abstract text available
Text: O O N M P T SR T ultRa low caPacitance SteeRing diode aRRay deScRiPtion T SR ESD E T Sot SR F T I IC POE IEC Package G M L P T L L U L C R HS C REACH C A SR T aPPlicationS C L C IEC IEC IEC L L P ESD A EFT A S A P VC USB I POE A V H L V L L D P E A FT Mechanical chaRacteRiSticS
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diode receptor ir
Abstract: smd code qv TDSG5160 TLME3100 diode receptor receptor ir
Text: Vishay Semiconductors General Information Explanation of Technical Data Vishay light emitting diodes and displays are generally designated in accordance with the Vishay designation system: TL. = Light emitting diode TD. = Display The following figures show how the components can
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05-Jul-04
diode receptor ir
smd code qv
TDSG5160
TLME3100
diode receptor
receptor ir
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Untitled
Abstract: No abstract text available
Text: COMCHIP Schottky Barrier Rectifier SMD Diodes Specialist SR502-G Thru. SR510-G Forward current: 5.0A Reverse voltage: 20 to 100V RoHS Device DO-27 Features -Fast switching. 0.052 1.30 -Low forward voltage, high current capability. 0.048(1.20) -Low power loss, high efficiency.
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SR502-G
SR510-G
DO-27
UL94V-0
MIL-STD202E,
QW-BB017
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LTE-C9301
Abstract: LTE-C1901 LTR-S320C LTR-C9303B LTR-733DBM1 LTR-5986D LTR-C1903B c1906 LTE-C1506 LTE-5238A
Text: 168 P TIR Through Hole & SMD Lite-On offers a broad range of discrete infrared components for application such as remote control, IR wire- less data transmission, security alarm & etc. Customers need infrared solutions featuring high power, high speed, wide viewing angels, high signal noise ratio and UL safety approval. The product line includes GaAs
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940nm
880nm
875nm/850nm
T-13/4
S3203B
940nm
LTR-C930DB
850nm
LTR-S320C
LTE-C9301
LTE-C1901
LTR-S320C
LTR-C9303B
LTR-733DBM1
LTR-5986D
LTR-C1903B
c1906
LTE-C1506
LTE-5238A
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Telefunken diode color code
Abstract: smd code qv diode receptor ir QV smd
Text: Vishay Telefunken General Information Explanation of Technical Data Vishay light emitting diodes and displays are generally designated in accordance with the Vishay designation system: TL. = Light emitting diode TD. = Display The following figures show how the components can be identified.
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BL-LS3528A0S1IR
Abstract: No abstract text available
Text: SMD INFRARED EMITTING DIODES BL-LS3528A0S1IR Features: 3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available
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BL-LS3528A0S1IR
850nm
2000pcs/Reel
BL-LS3528A0S1IR
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Untitled
Abstract: No abstract text available
Text: □ - □ 3 . V 'C X - Y Super Fast Recovery Diode Twin Diode mn?â Surface Mount OUTLINE DIMENSIONS DF10LC20U Unit • mm Package I STO-220 10 9 ± -9- 200V 10A >SMD m s 'i'x > trr35n s >SR SÜ >DC/DC ® > 7 5 ^ * -f-J b 2 @ (D >^BsOAw0,^ K H s . FA RATINGS
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OCR Scan
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DF10LC20U
STO-220
trr35n
50HziE5K
J515-5
J515-5
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BZV55C12
Abstract: zener sod-80 BZV55C16 43 smd SOT-89 BZV55C6V2 BZV55C15
Text: SMD Zener Diodes Continued 500m W POWER 1.0 w <Sr % SOD-80 CASE PREFERRED ZENER VOLTAGE INDUSTRY STANDARD j 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56
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OCR Scan
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OD-80
CLL5221B*
CLL5222B'
CLL5223B'
CLL5224BCLL5225B*
L5226B
L5227B
L5228B
CLL5229B
L5230B
BZV55C12
zener sod-80
BZV55C16
43 smd SOT-89
BZV55C6V2
BZV55C15
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Untitled
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMPS Kingbright KP-3216 P ackage Dim ensions Features •3.2m m x1.6m m SM T LED. 1.1mm THICKNESS. CATHODE MARK ' SR : ANODE •LOW POW ERCONSUM PTION. •W ID E VIEWING ANGLE. I VÂ I V7/. •ID EAL FOR BACKLIGHT AND INDICATOR. •V A R IO U S COLORS AND LENS TYPE S AVAILABLE.
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KP-3216
-3216S
P-3216SYT
1-KP3216-5
P-3216
1-KP3216-6
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2C079
Abstract: No abstract text available
Text: Kingbright SMD INFRARED EM ITTIN G DIODES A P 1 6 0 8 F 3 C 0 6 0 3 A P 2 0 1 2 F 3 C (0 8 0 5 ) A P 3 2 1 6 F 3 C (1 2 0 6 ) A P A 3 0 1 0 F 3 C (1 1 0 4 ) S J* ? M aterial P art No. À P (nm ) Po (m W /sr) @ 20 m A Len s Type Min. | V iew ing A ngle Typ.
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OCR Scan
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AP1608F3C
AP2012F3C
AP3216F3C
AP1608SF4C
AP2012F3C
AP2012SF4C
AP3216SF4C
2C079
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