SA97
Abstract: AT49BV6416C AT49BV6416CT
Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout
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Original
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64-megabit
3465C
SA97
AT49BV6416C
AT49BV6416CT
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PDF
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SA128
Abstract: No abstract text available
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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Original
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3608C
SA128
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PDF
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AT49BV640D
Abstract: AT49BV640DT SA1117
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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Original
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PDF
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3608B
Abstract: SA117
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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Original
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3608B
SA117
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PDF
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AT49BV640D
Abstract: AT49BV6416C AT49BV6416CT
Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout
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Original
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64-megabit
3465D
AT49BV640D
AT49BV6416C
AT49BV6416CT
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PDF
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SA93
Abstract: SA97 AT49BV6416C AT49BV6416CT
Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout
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Original
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64-megabit
3465B
SA93
SA97
AT49BV6416C
AT49BV6416CT
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PDF
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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Original
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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PDF
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AT49BV6416
Abstract: AT49BV6416C AT49BV6416CT
Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout
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Original
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64-megabit
AT49BV6416
AT49BV6416C
AT49BV6416CT
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PDF
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SA97
Abstract: AT49BV640D AT49BV640DT SA1117
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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Original
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3608C
SA97
AT49BV640D
AT49BV640DT
SA1117
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PDF
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Untitled
Abstract: No abstract text available
Text: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture
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Original
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3464C
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PDF
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AT49SN6416
Abstract: AT49SN6416T SA21D 56c2 2F360
Text: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture
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Original
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3464B
AT49SN6416
AT49SN6416T
SA21D
56c2
2F360
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PDF
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AT49SN6416
Abstract: AT49SN6416T Hardlock drive CSA43
Text: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture
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Original
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3464C
AT49SN6416
AT49SN6416T
Hardlock drive
CSA43
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PDF
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FY452
Abstract: MT28C6428P18 MT28C6428P20
Text: 4 MEG x 16 ASYNCHRONOUS/PAGE FLASH 512K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C6428P20 MT28C6428P18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 67-Ball FBGA Top View • Flexible dual-bank architecture
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Original
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MT28C6428P20
MT28C6428P18
67-Ball
32K-word
512K-words
MT28C6428P20
FY452
MT28C6428P18
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PDF
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67-ball
Abstract: 16mb HIGH-SPEED ASYNCHRONOUS SRAM FY452 micron sram MT28C6428P18FM-85 BET MT28C6428P18 MT28C6428P20
Text: ADVANCE‡ 4 MEG x 16 ASYNCHRONOUS/PAGE FLASH 512K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C6428P20 MT28C6428P18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 67-Ball FBGA Top View • Flexible dual-bank architecture
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Original
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MT28C6428P20
MT28C6428P18
67-Ball
32K-word
MT28C6428P20
16mb HIGH-SPEED ASYNCHRONOUS SRAM
FY452
micron sram
MT28C6428P18FM-85 BET
MT28C6428P18
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PDF
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FY452
Abstract: MT28C6428P18 MT28C6428P20
Text: ADVANCE‡ 4 MEG x 16 ASYNCHRONOUS/PAGE FLASH 512K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C6428P20 MT28C6428P18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 67-Ball FBGA Top View • Flexible dual-bank architecture
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Original
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MT28C6428P20
MT28C6428P18
67-Ball
32K-word
MT28C6428P20
FY452
MT28C6428P18
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PDF
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FW912
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture
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Original
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MT28F642D18
MT28F642D20
FW912
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PDF
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fw912
Abstract: fw911 FX912 FY912 FY-912 FX911
Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture
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Original
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MT28F642D18
MT28F642D20
80blocks
fw912
fw911
FX912
FY912
FY-912
FX911
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PDF
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fw912
Abstract: MT28F642D18 MT28F642D20 fw911 FY912 fw905
Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture
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Original
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MT28F642D18
MT28F642D20
59-Ball
MT28F642D18
MT28F642D20
fw912
fw911
FY912
fw905
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PDF
|
fw912
Abstract: MT28F642D18 MT28F642D20
Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture
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Original
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MT28F642D18
MT28F642D20
59-Ball
MT28F642D18
MT28F642D20
fw912
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PDF
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Opt pam circuit
Abstract: sr3 357
Text: G E N E R A L D E SC R IP T IO N Hie MSM9810, to which up to 128 Mbits of ROM and/or EPROM storing voice data can directly be connected externally, is an IC that can playback 8 channels simultaneously. The device is straight 8-bit PCM playback, non-linear 8-bit PCM playback, 4-bit ADPCM
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OCR Scan
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MSM9810,
MSM9810
--16dB
Opt pam circuit
sr3 357
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification SlgnetlcsMilitary Microprocessor Products Enhanced programmable communications interface EPCI 68661/2661 NO TIC E: This product is non-compliant to MlL-STD-883. DESCRIPTION - 5- to 6-bit characters plus parity The Signetics 68661 EPCI is a universal
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OCR Scan
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MlL-STD-883.
16-bit
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PDF
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ad149
Abstract: weitek 3164
Text: 3164/3364 64-BIT FLOATING-POINT DATA PATH UNITS November 1989 1. Features 64-BIT FLOATING-POINT DATA PATH FULL FUNCTION 64-bit and 32-bit floating-point and 32-bit integer multiplier Divide and square root operations Single-cycle pipeline throughput for the following
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OCR Scan
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64-BIT
32-bit
ad149
weitek 3164
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PDF
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EQUIVALENT OF SR240
Abstract: XL-8137 weitek Weitek 3364 weitek 3164 Weitek xl-8136 wtl3364 CXNL 0x78F y2274
Text: tilEIT EK CORP Tbb3ö2b O O O lS lö 11E D □ 3164/3364 64-BIT FLOATING-POINT DATA PATH UNITS T - W - H - o S November 1989 1. Features 64-BIT FLO A T IN G -PO IN T D A T A PA T H F U L L FU N C T IO N 64-bit and 32-bit floating-point and 32-bit integer multiplier
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OCR Scan
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64-BIT
32-bit
EQUIVALENT OF SR240
XL-8137
weitek
Weitek 3364
weitek 3164
Weitek xl-8136
wtl3364
CXNL
0x78F
y2274
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PDF
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