sram 16kx8
Abstract: No abstract text available
Text: SM364SCSM83UI15 January 1997 Rev 1 SMART Modular Technologies SM364SCSM83UI15 512KByte 64Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364SCSM83UI15 is a high performance, 512 Kilobyte synchronous secondary cache SRAM module for
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SM364SCSM83UI15
SM364SCSM83UI15
512KByte
64Kx64)
160-pin,
32Kx32
16Kx8
sram 16kx8
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16kx8 static ram ttl
Abstract: sram 16kx8 TIO8
Text: SM364SCSMB3UI15 February 1997 Rev 0 SMART Modular Technologies SM364SCSMB3UI15 512KByte 64Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364SCSMB3UI15 is a high performance, 512 Kilobyte synchronous secondary cache SRAM module for
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SM364SCSMB3UI15
SM364SCSMB3UI15
512KByte
64Kx64)
160-pin,
32Kx32
16Kx8
16kx8 static ram ttl
sram 16kx8
TIO8
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smart modular sram
Abstract: cwe4 umc chipset 64kx64 16kx8 static ram ttl
Text: SM364SCSP83UI15 August 1996 Rev 1C SMART Modular Technologies SM364SCSP83UI15 512KByte 64Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364SCSP83UI15 is a high performance, 512 Kilobyte synchronous secondary cache SRAM module for
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SM364SCSP83UI15
SM364SCSP83UI15
512KByte
64Kx64)
160-pin,
32Kx32
16Kx8
smart modular sram
cwe4
umc chipset
64kx64
16kx8 static ram ttl
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IC1210-m128LQ
Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are
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6116 RAM
Abstract: 7217 up down counter ram 6116 256KB static RAM PY 88 74FST3390 7M1002 c 3198 c 3198 transistor dual-port RAM
Text: Integrated Device Technology, Inc. As of 10/10/95 Page 1 Alpha-Numeric List of Products Doc ID Product Product Description Speeds Pkgs Temp Volt Avail 2760 10474 1KX4 CORNER POWER Bi SRAM, ECL-10K I/O 4ns C 5V Now 2759 10480 16KX1 Bi SRAM, ECL-10K I/O 4ns
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ECL-10K
16KX1
64KX1
16KX4
64KX4
6116 RAM
7217 up down counter
ram 6116
256KB static RAM
PY 88
74FST3390
7M1002
c 3198
c 3198 transistor
dual-port RAM
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DPRAM
Abstract: 256K DPRAM 16Kx8 sram 16kx8 64Kx8 100TQFP AL5DS9069V AL5DS9079V 32Kx16 AL5DS9099V
Text: DPRAM Design Methodology AverLogic Technologies Corp. Synchronous Dual-Port SRAM AL5DS9xx9V Selection Guide Device AL5DS9xxxV Configuration Density #bits AL5DS9069V 16Kx8 128K AL5DS9079V 32Kx8 256K AL5DS9089V 64Kx8 512K AL5DS9099V 128Kx8 1M AL5DS9159V 8Kx9
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AL5DS9069V
16Kx8
AL5DS9079V
32Kx8
AL5DS9089V
64Kx8
AL5DS9099V
128Kx8
AL5DS9159V
AL5DS9169V
DPRAM
256K DPRAM
16Kx8
sram 16kx8
64Kx8
100TQFP
AL5DS9069V
AL5DS9079V
32Kx16
AL5DS9099V
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CYC199
Abstract: sram cross reference CYPRESS SAMSUNG CROSS REFERENCE W24257AK Cypress CROSS 9042 issi w2425 IS1C64AH idt cross reference
Text: High Speed SRAM Cross Reference Guide Part No. Density bits Org. Voltage Access Pins Time (ns) (bits) Package W2465AJ 64K 8Kx8 5V 12 28 J:SOJ W24129AJ W24L257AJ,Q 128K 256K 16Kx8 32Kx8 5V 3.3V 12 12, 15 28 28 J:SOJ J:SOJ/Q:STSOP W24257AK,J,Q,S 256K 32Kx8
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W2465AJ
W24129AJ
W24L257AJ
16Kx8
32Kx8
W24257AK
W24512AJ
W26L010AJ
AT-12
CYC199
sram cross reference
CYPRESS SAMSUNG CROSS REFERENCE
Cypress CROSS
9042
issi
w2425
IS1C64AH
idt cross reference
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7142LA25L48B
Abstract: 7164L20 4Kx8 sram ttl 5962-8861011UA 7206l20l 5962-8855206YA 5962-8855206 5962-8953604 54FCT244AT 5962-8855206XA
Text: IDT Military Offerings FIFO Military Offerings Logic Military Offerings Multi-Port Military Offerings SRAM Military Offerings May 2005 FIFO Military Offerings FIFO Military Selector Guide by Part Number FIFO Military Selector Guide (by SMD Number) Obsolete Part List and Replacement Guide
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72401L10DB
72401L15DB
72401L25DB
72401L35DB
72403L10DB
72403L35DB
7200L20TDB
7200L30TDB
7201LA20DB
7201LA30DB
7142LA25L48B
7164L20
4Kx8 sram ttl
5962-8861011UA
7206l20l
5962-8855206YA
5962-8855206
5962-8953604
54FCT244AT
5962-8855206XA
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16KX8
Abstract: 64KX32 GS81132Q GSM14P256KB-I66 GSM14P512KB-I66
Text: GSM14P256KB-I66 GSM14P512KB-I66 GSI TECHNOLOGY GSM14P256KB-I66 GSM14P512KB-I66 256KB / 512KB Modules COASt 1.4 Specification Features Functional Description cont’d • • • • The GSM14P256KB-I66, and 256KB module, use GSI’s GS81132Q 32KX32 synchronous burst SRAM and a single
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GSM14P256KB-I66
GSM14P512KB-I66
256KB
512KB
GSM14P256KB-I66,
GS81132Q
32KX32
16KX8
64KX32
GSM14P256KB-I66
GSM14P512KB-I66
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16KX8
Abstract: TAG 106 D 64KX32 GS81132Q GSM31P256KB-I66 GSM31P512KB-I66 SRAM 16k*8
Text: GSM31P256KB-I66 GSM31P512KB-I66 GSI TECHNOLOGY GSM31P256KB-I66 GSM31P512KB-I66 256KB / 512KB Modules COASt 3.1 Specification Features Functional Description cont’d • • • • The GSM31P256KB-I66, and 256KB module, use GSI’s GS81132Q 32KX32 synchronous burst SRAM and a single
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GSM31P256KB-I66
GSM31P512KB-I66
256KB
512KB
GSM31P256KB-I66,
GS81132Q
32KX32
16KX8
TAG 106 D
64KX32
GSM31P256KB-I66
GSM31P512KB-I66
SRAM 16k*8
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SECDED
Abstract: sram 16k8 EP3SE50
Text: 4. TriMatrix Embedded Memory Blocks in Stratix III Devices SIII51004-1.1 Introduction TriMatrix embedded memory blocks provide three different sizes of embedded SRAM to efficiently address the needs of Stratix III FPGA designs. TriMatrix memory includes 640-bit memory logic array blocks
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SIII51004-1
640-bit
144-Kbit
M144K
SECDED
sram 16k8
EP3SE50
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Untitled
Abstract: No abstract text available
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM20L08
128Kx8
33MHz
128Kx8
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FM18L08
Abstract: FM20L08 FM20L08-60-TGC FM20L08-60
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM20L08
128Kx8
33MHz
128Kx8
FM18L08
FM20L08
FM20L08-60-TGC
FM20L08-60
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Untitled
Abstract: No abstract text available
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM20L08
128Kx8
33MHz
128Kx8
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ht93c46
Abstract: HT80232 93C46 SOCKET coupling transformer ethernet tp-link 10MHZ NE2000 MAR6
Text: HT80232 Ethernet Controller/PCI ECON-PCI Features • • • • • • • Single chip Ethernet controller for PCI bus interface Register compatible with NE2000 External 15ns access time SRAM for data transfer Integrated 10BaseT TP interface – Smart squelch circuit with programmable
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HT80232
NE2000
10BaseT
10Base2
100-pin
ht93c46
HT80232
93C46 SOCKET
coupling transformer ethernet tp-link
10MHZ
NE2000
MAR6
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10MHZ
Abstract: HT80232 NE2000 HT93C46
Text: HT80232 Preliminary Ethernet Controller/PCI ECON-PCI Features • • • • • • Single chip Ethernet controller for PCI bus interface Register compatible with NE2000 External 15ns access time SRAM for data transfer Integrated 10BaseT TP interface – Smart squelch circuit with programmable
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HT80232
NE2000
10BaseT
10Base2
32K-byte
64K-byte
10MHZ
HT80232
NE2000
HT93C46
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SECDED
Abstract: EP3SE50
Text: 4. TriMatrix Embedded Memory Blocks in Stratix III Devices SIII51004-1.8 Introduction TriMatrix embedded memory blocks provide three different sizes of embedded SRAM to efficiently address the needs of Stratix III FPGA designs. TriMatrix memory includes 640- in ROM mode only or 320-bit memory logic array blocks (MLABs),
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SIII51004-1
320-bit
144-Kbit
M144K
SECDED
EP3SE50
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sram 16kx8
Abstract: No abstract text available
Text: P U M A 11 Issue 1.1: October 1988 molate ADVANCED PRODUCT INFORMATION Mosaic Sem iconductor Inc Pinned Uncommited Memory Array Pin Definition Features PGA allowing ASIC combinations of SRAM, EEPROM and UV EPROM Maximum total memory size of 128k x 8 SRAM/EEPROM
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MIL-STD-883C
A14/VPMAI5
AO-15
sram 16kx8
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Untitled
Abstract: No abstract text available
Text: ^ n n i i y U I^ IV DPS129 Dense-Pac Microsystems, Inc. 0 16K X 8 CM OS SRAM M ODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS129 is a 16K X 8 Static Random Access Memory SRAM module using 8 CM OS 16K X 1 SRAMs. The memory utilizes asynchronous circuitry
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DPS129
DPS129
125-C
16KX8
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Untitled
Abstract: No abstract text available
Text: DPS88H16 Dense-Pac Microsystems, Inc. O 16K X 8 C M O S SRAM M O D U LE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS88H16 is a 16K X 8 SRAM module built with eight 4K X 8 CMOS SRAMs in ceramic LCC packages suface mounted on a 28-pin, 0.600" wide Co-Fired DIP
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DPS88H16
DPS88H16
28-pin,
16KX8
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PDM4M6214 PDM4M6215 PDM4M6216 PDM4M6217 PARADIGM' 256KB and 512KB Second Level Cache Modules for Systems Using the Intel Pentium CPU and the OPTi Viper Chipset Features: PDM4M6215 use Paradigm's PDM31256 32K x 8 SRAM and FCT logic. The PDM4M6216 and
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PDM4M6214
PDM4M6215
PDM4M6216
PDM4M6217
256KB
512KB
PDM4M6215
PDM31256
PDM4M6216
PDM4M6217
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ht93c46
Abstract: HT80232 MA10 MA11 MA12 MA13 NE2000
Text: HOLTEK r r HT80232 Ethernet Controller/PCI ECON-PCI Features • • • • • • Single chip Ethernet controller for PCI bus interface Register compatible with NE2000 External 15ns access time SRAM for data transfer Integrated lOBaseT TP interface - Sm art squelch circuit with programmable
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HT80232
NE2000
10Base2
100-pin
ht93c46
HT80232
MA10
MA11
MA12
MA13
NE2000
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4kx16 sram
Abstract: No abstract text available
Text: 4KX4 BASED Dense-Pac Microsystems, Inc. CMOS SRAM FAMILY - DIPS D E S C R IP T IO N : DPS88H04 The4KX4 Based Family ¡s part of a new line of high speed static RAM modules developed by Dense-Pac Microsys tems, Inc. This family uses advanced packaging concepts
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DPS88H04
DPS4X16
DPS84H08
DPS88H04
DPS88H08
DPS88H16
-16KX8
4KX16
DPS88H08
DPS88H16
4kx16 sram
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Untitled
Abstract: No abstract text available
Text: DPS88H16 16K X 8 C M O S S R AM M O D U L E NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS88H 16 is a 16K X 8 SRAM m odule b u ilt w ith eight 4K X 8 C M O S SRAMs in ceram ic LCC packages suface m ounted on a 28-pin, 0.600" w id e Co-Fired DIP substrate. The m em ory utilizes asyncronous circuitry
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DPS88H16
DPS88H
28-pin,
DPS88H16
A0-A11
S88H16
16KX8
30A01604
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