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    SRAM 512K BIT SOP32 Search Results

    SRAM 512K BIT SOP32 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy

    SRAM 512K BIT SOP32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BS62LV4003

    Abstract: BS62LV4003EC BS62LV4003EI BS62LV4003PC BS62LV4003SC BS62LV4003SI BS62LV4003STC BS62LV4003TC TSOP2-32
    Text: Low Power/Voltage CMOS SRAM 512K X 8 bit BSI BS62LV4003 „ FEATURES „ GENERAL DESCRIPTION • Very low operation voltage : 2.4V ~ 3.6V • Very low power consumption Vcc = 3.0V C-grade: 20mA Max. operating current I -grade: 25mA (Max.) operating current


    Original     		PDF BS62LV4003 100ns BS62LV4003 R0201-BS62LV4003 -40oC BS62LV4003EC BS62LV4003EI BS62LV4003PC BS62LV4003SC BS62LV4003SI BS62LV4003STC BS62LV4003TC TSOP2-32

    BS62LV4006

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 512K X 8 bit Automotive Grade BS62LV4006 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 25mA Max. at 70ns


    Original     		PDF BS62LV4006 BS62LV4006 R0201-BS62LV4006A

    BS62LV4006EI

    Abstract: BS62LV4006 BS62LV4006EC BS62LV4006PC BS62LV4006PI BS62LV4006SC BS62LV4006SI BS62LV4006STC BS62LV4006TC
    Text: Very Low Power CMOS SRAM 512K X 8 bit BS62LV4006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : Operation current : 30mA Max. at 55ns VCC = 3.0V


    Original     		PDF BS62LV4006 10/20uA R0201-BS62LV4006 BS62LV4006EI BS62LV4006 BS62LV4006EC BS62LV4006PC BS62LV4006PI BS62LV4006SC BS62LV4006SI BS62LV4006STC BS62LV4006TC

    TSOP2-32

    Abstract: BS62LV4005 BS62LV4005EC BS62LV4005EI BS62LV4005PC BS62LV4005SC BS62LV4005SI BS62LV4005STC BS62LV4005STI BS62LV4005TC
    Text: BSI Low Power/Voltage CMOS SRAM 512K X 8 bit BS62LV4005 „ GENERAL DESCRIPTION „ FEATURES • Vcc operation voltage : 4.5V ~ 5.5V • Low power consumption Vcc = 5.0V C-grade: 45mA Max. operating current I -grade: 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current


    Original     		PDF BS62LV4005 BS62LV4005 R0201-BS62LV4005 -40oC TSOP2-32 BS62LV4005EC BS62LV4005EI BS62LV4005PC BS62LV4005SC BS62LV4005SI BS62LV4005STC BS62LV4005STI BS62LV4005TC

    STSOP-32

    Abstract: BS62LV4005 BS62LV4005EC BS62LV4005EI BS62LV4005PC BS62LV4005SC BS62LV4005SI BS62LV4005STC BS62LV4005STI BS62LV4005TC
    Text: BSI Low Power/Voltage CMOS SRAM 512K X 8 bit BS62LV4005 „ GENERAL DESCRIPTION „ FEATURES • Vcc operation voltage : 4.5V ~ 5.5V • Low power consumption Vcc = 5.0V C-grade: 45mA Max. operating current I -grade: 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current


    Original     		PDF BS62LV4005 BS62LV4005 R0201-BS62LV4005 STSOP-32 BS62LV4005EC BS62LV4005EI BS62LV4005PC BS62LV4005SC BS62LV4005SI BS62LV4005STC BS62LV4005STI BS62LV4005TC

    375E-1

    Abstract: BS62LV4006 BS62LV4006EC BS62LV4006PC BS62LV4006SC BS62LV4006STC BS62LV4006S stsop32
    Text: Very Low Power CMOS SRAM 512K X 8 bit BS62LV4006 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS62LV4006 R0201-BS62LV4006 375E-1 BS62LV4006 BS62LV4006EC BS62LV4006PC BS62LV4006SC BS62LV4006STC BS62LV4006S stsop32

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 512K X 8 bit BS62LV4006 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS62LV4006 volta62LV4006 R0201-BS62LV4006

    jedec ms-024

    Abstract: BH62UV4000 BH62UV4000DI BH62UV4000SI
    Text: Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit BH62UV4000 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 10mA Max. at 55ns


    Original     		PDF BH62UV4000 V/25OC BH62UV4000 R0201-BH62UV4000 36-ball jedec ms-024 BH62UV4000DI BH62UV4000SI

    jedec ms-024

    Abstract: BS62LV4006SA
    Text: Very Low Power CMOS SRAM 512K X 8 bit Automotive Grade BS62LV4006 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS62LV4006 R0201-BS62LV4006A jedec ms-024 BS62LV4006SA

    BH62UV4000

    Abstract: BH62UV4000DI BH62UV4000SI BH62UV4000STI BH62UV4000TI TSOP-32
    Text: Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit BH62UV4000 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V The BH62UV4000 is a high performance, ultra low power CMOS Ÿ Ultra low power consumption :


    Original     		PDF BH62UV4000 BH62UV4000 R0201-BH62UV4000 BH62UV4000DI BH62UV4000SI BH62UV4000STI BH62UV4000TI TSOP-32

    HN58C1001FPI-15

    Abstract: HN58C1001FPI-15 hitachi M5M5V216ATP-55HI M5M51008DFP-55HI BGA-165 M5M5W817 TSOP 28 SPI memory Package flash BGA165 SRAM 512K*8 BIT SOP32 M5M5256DFP-70LL
    Text: Memory Products Reliable specialty, advanced and mainstream commodity memory devices for digital storage applications Renesas, the #3 semiconductor supplier worldwide, offers an extensive range of memory ICs for temporary and permanent digital storage in all kinds


    Original     		PDF 0603/5K/JPG/BCD/SP 01-1889A HN58C1001FPI-15 HN58C1001FPI-15 hitachi M5M5V216ATP-55HI M5M51008DFP-55HI BGA-165 M5M5W817 TSOP 28 SPI memory Package flash BGA165 SRAM 512K*8 BIT SOP32 M5M5256DFP-70LL

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    UC62LV4008HC

    Abstract: UC62LV2008 UC62LV4008 SRAM 512K BIT SOP32 circuit diagram of 3 phase automatic phase chang U-Chip Technology
    Text: Low Power CMOS SRAM 512K X 8 Bits UC62LV4008 -55/-70 Description Features: • Vcc operation voltage : 1.5V ~ 3.6V • Low power consumption : 35mA Max. operating current 2uA (Typ.) CMOS standby current • High Speed Access time : 70ns (Max.) at Vcc = 1.5V


    Original     		PDF UC62LV4008 UC62LV2008 UC62LV4008HC UC62LV4008 SRAM 512K BIT SOP32 circuit diagram of 3 phase automatic phase chang U-Chip Technology

    UC62LV2008

    Abstract: UC62LS4008AC UC62LS4008AI UC62LS4008FC UC62LS4008FI UC62LS4008GC UC62LS4008GI UC62LS4008HC UC62LS4008HI SRAM 512K BIT SOP32
    Text: Low Power CMOS SRAM 512K X 8 Bits UC62LS4008 -20/-25 Description Features: • Vcc operation voltage : 3.0V ~ 3.6V • Low power consumption : 20mA Max. operating current 2uA (Typ.) CMOS standby current • High Speed Access time : 25ns (Max.) at Vcc = 3.0V


    Original     		PDF UC62LS4008 UC62LV2008 UC62LS4008AC UC62LS4008AI UC62LS4008FC UC62LS4008FI UC62LS4008GC UC62LS4008GI UC62LS4008HC UC62LS4008HI SRAM 512K BIT SOP32

    R1LV1616

    Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
    Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		PDF R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls R1WV6416R R1LV1616 ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817

    ECU car

    Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
    Text: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,


    Original     		PDF R1LV0816ASD 16bit REJ03C0397-0001 288-words 16-bit, 52pin R1WV6416R ECU car 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI

    M66005-0001AHP

    Abstract: rtd 2668 toyota bean protocol M66005 LCD TV T-con board 41 pin name m37632mct ic RTD 2648 M66005-0001AFP M37632EFFP hd66791
    Text: 2004.4 2004.4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble


    Original     		PDF REJ01B0008-0300Z M66005-0001AHP rtd 2668 toyota bean protocol M66005 LCD TV T-con board 41 pin name m37632mct ic RTD 2648 M66005-0001AFP M37632EFFP hd66791

    MSM7731-02

    Abstract: P-BGA313-3535-1 TBA 931 MsM82C59 MSM66 arm processor msm5299 SSOP20-P-250-0 QFJ28-P-S450-1 MSM65524A
    Text: Datasheet CD-ROM Ver 1.23, July 1999 Bay of Islands, New Zealand Attention Please! People to People Technology 1. Regarding Operation • This is NOT a music CD. Please do not play it on an ordinary music CD player. It may cause damage to your ears and loudspeakers.


    Original     		PDF 270MB ML670100 D-41460 MSM7731-02 P-BGA313-3535-1 TBA 931 MsM82C59 MSM66 arm processor msm5299 SSOP20-P-250-0 QFJ28-P-S450-1 MSM65524A

    Untitled

    Abstract: No abstract text available
    Text: LH5P8512 FEATURES PRELIMINARY CM OS 4M 512K x 8 Pseudo-Static RAM • • 5 24,28 8 x 8 bit organization • Access time: 60 /7 0 /8 0 ns (M AX.) • Cycle time: 110/130/150 ns (M IN .) • Power supply: Compatible with JE D E C standard 4M SRAM pinout •


    OCR Scan     		PDF LH5P8512 32-pin, 600-m 525-m 400-m LH5P8512

    Sharp IIS

    Abstract: C31A SHARP ORDERING INFORMATION
    Text: SHARP b lE CORP LH5P8512 FEATURES • 524,288 x 8 bit organization • Access time: 60/70/80 ns MAX. • Cycle time: 110/130/150 ns (MIN.) • Power supply: D • ûlfiOTSfi GG G T b 5 5 D3S H S R P J PRELIMINARY CMOS 4M (512K x 8) Pseudo-Static RAM •


    OCR Scan     		PDF LH5P8512 32-pin, 600-mil 525-mil 400-mil LH5P8512 Sharp IIS C31A SHARP ORDERING INFORMATION

    Untitled

    Abstract: No abstract text available
    Text: CMOS 4M 512K x 8 P se u d o -S ta tic RAM FEATURES DESCRIPTION • 524,288 words x 8 bit organization The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word x 8 bit organization. It is fabricated using silicon-gate CMOS process technology. • CE access time Ocea): 120 ns (MAX.)


    OCR Scan     		PDF cycles/32 32-pin, 525-mil LH5PV8512 V85-\2 OP32-P-525) LH5PV8512N-12

    Untitled

    Abstract: No abstract text available
    Text: CMOS 4M 512K x 8 Pseudo-Static RAM FEATURES DESCRIPTION • 524,288 words x 8 bit organization The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word x 8 bit organization. It is fabricated using silicon-gate CMOS process technology. • CE access time (tcEA)• 120 ns (MAX.)


    OCR Scan     		PDF cycles/32 LH5PV8512 32-pin, 525-mil OP32-P-525) LH5PV8512N-12

    sp8512

    Abstract: No abstract text available
    Text: PRELIMINARY L H 5 P 8 5 1 2 FEATURES • 5 2 4 ,2 8 8 x 8 bit organization • Access time: 6 0 /7 0 /8 0 ns M AX. • Cycle time: 110/130/150 ns (M IN .) • Power supply: CMOS 4M (512K • x 8) Pseudo-Static RAM Compatible with J E D E C standard 4M SRA M pinout


    OCR Scan     		PDF 32-pin, 600-m 525-m 400-m LH5P8512 LH5P8512 600-mil sp8512

    Untitled

    Abstract: No abstract text available
    Text: LH5P8512 FEATURES • 5 2 4 ,2 8 8 x 8 bit organization • Access time: 60 /7 0 /8 0 ns M AX. • Cycle time: 110/130/150 ns (M IN .) PRELIMINARY CMOS 4M (512K • x 8) Pseudo-Static RAM Compatible with J E D E C standard 4M S RA M pinout • Packages:


    OCR Scan     		PDF LH5P8512 32-pin, 600-m 525-m 400-m LH5P8512