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    SRAM 512KX8 Search Results

    SRAM 512KX8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7MB4048S30P Renesas Electronics Corporation 512KX8 SRAM FR-4 DIP MOD Visit Renesas Electronics Corporation
    7MB4048S35P Renesas Electronics Corporation 512KX8 SRAM FR-4 DIP MOD Visit Renesas Electronics Corporation
    7MB4048S45P Renesas Electronics Corporation 512KX8 SRAM FR-4 DIP MOD Visit Renesas Electronics Corporation
    7MB4048S25P Renesas Electronics Corporation 512KX8 SRAM FR-4 DIP MOD Visit Renesas Electronics Corporation
    7MB4048S55P Renesas Electronics Corporation 512KX8 SRAM FR-4 DIP MOD Visit Renesas Electronics Corporation
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    SRAM 512KX8 Price and Stock

    Toshiba America Electronic Components SRAM512KX8-10FSL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SRAM512KX8-10FSL 83
    • 1 $12.402
    • 10 $8.268
    • 100 $7.6479
    • 1000 $7.6479
    • 10000 $7.6479
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    SRAM 512KX8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SRAM AS8S128K32 128K x 32 SRAM GENERAL 21, 28, 39 are no connects PN 66 DESCRIPTION Lead PGA- Pins 8, SRAM MEMORY ARRAY The AS8S128K32 is a 4 Megabit CMOS SRAM Module organized as 128Kx32-bits and user configurable to 256Kx16 or 512Kx8. The AS8S128K32 achieves high speed access, low


    Original     		PDF AS8S128K32 AS8S128K32 128Kx32-bits 256Kx16 512Kx8.

    68S16000

    Abstract: AB-020
    Text: 512K x 32 SRAM MODULE PUMA 68S16000/AB-020/025/35/45 Issue 5.0 : May 2001 • User Configurable as 8 / 16 / 32 bit wide output. • Operating Power : • Standby Power : CMOS • Single 5V±10% Power supply. 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM CS1


    Original     		PDF 68S16000/AB-020/025/35/45 220mW 68S16000 16Mbit 200pcs 183OC 225OC 219OC AB-020

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION „ 512Kx24 bit CMOS Static „ Random Access Memory Array The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer


    Original     		PDF 512Kx24 512Kx24 MO-163) 14mmx22mm WED8L24513V WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106XL

    2048x2048

    Abstract: No abstract text available
    Text: HY62UF8400/ HY62QF8400/ HY62EF8400/ HY62SF8400 Series 512Kx8bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF8400 / HY62QF8400 / HY62EF8400 / HY62SF8400 is a high speed and super low power 4Mbit full CMOS SRAM organized as 524,288 words by 8 bits. The HY62UF8400 /


    Original     		PDF HY62UF8400/ HY62QF8400/ HY62EF8400/ HY62SF8400 512Kx8bit HY62UF8400 HY62QF8400 HY62EF8400 2048x2048

    EDI88512

    Abstract: No abstract text available
    Text: EDI88512CA-XMXG WPS512K8X-XRJXG White Electronic Designs 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability


    Original     		PDF 512Kx8 EDI88512CA-XMXG WPS512K8X-XRJXG EDI88512

    smd code F18

    Abstract: No abstract text available
    Text: ACT–SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module CIRCUIT TECHNOLOGY www.aeroflex.com FEATURES 2 – 128K x 8 SRAMs & 2 – 512K x 8 Flash Die in One MCM • Access Times of 25ns SRAM and 60ns (Flash) or 35ns (SRAM) and 70 or 90ns (Flash)


    Original     		PDF SF2816 128Kx16 512Kx16 512KX8 MIL-PRF-38534 MIL-STD-883 SCD3853 smd code F18

    making A10

    Abstract: No abstract text available
    Text: L-51001-0E MITSUBISHI ELECTRIC Mitsubishi Fast SRAM Technical Direction Large Capacity 1M 4M Low Power Vcc 5V High Speed Fast SRAM Multi Bit x1, x4 x8 x16 0.25um CMOS Special Wide Temperature Version Fast SRAM 0.4um Super CMOS 3.3V Return to Contents L-51008-0D


    Original     		PDF L-51001-0E L-51008-0D L-51010-0C 25ical, making A10

    VDR 0047

    Abstract: No abstract text available
    Text: HY62U8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Revised - Insert 70ns Part - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.26.2000


    Original     		PDF HY62U8400A 512Kx8bit 15ns/20ns HY62U8400A 100ns VDR 0047

    BLF 272

    Abstract: bq4842 bq4852Y BD-962
    Text: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits


    Original     		PDF bq4852Y 512Kx8 304-bit BLF 272 bq4842 BD-962

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Remark Rev. 0.0 - 1′st edition - Package Dimension Finalized Feb. 4′th, 1997 Preliminary


    Original     		PDF KM68V4000BZ, KM68U4000BZ 512Kx8 48-CSP 55/Typ.

    VDR 0047

    Abstract: No abstract text available
    Text: HY62V8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 03 Revision History Insert Revised - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.06.2000 Final 04 Revised


    Original     		PDF HY62V8400A 512Kx8bit HY62V8400A VDR 0047

    MR2A08A

    Abstract: MARK W1 TSOP zd 409 MR2A08AYS35 MR2A08AMA35 MR2A08
    Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A08A 20-years MR2A08A 304-bit EST00170 MR2A08A, MARK W1 TSOP zd 409 MR2A08AYS35 MR2A08AMA35 MR2A08

    Untitled

    Abstract: No abstract text available
    Text: MR2A08A 512K x 8 MRAM Memory FEATURES • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A08A AEC-Q100 MR2A08A EST00170

    DPS512X8MKN3

    Abstract: No abstract text available
    Text: 512Kx8, 20 - 45ns, STACK/DIP 30A129-11 D 4 Megabit High Speed CMOS SRAM DPS512X8MKN3 PRELIMINARY DESCRIPTION: The DPS512X8MKN3 High Speed SRAM ‘’STACK’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable


    Original     		PDF 512Kx8, 30A129-11 DPS512X8MKN3 DPS512X8MKN3 600-mil-wide, 32-pin

    EDI88512

    Abstract: No abstract text available
    Text: EDI88512CA-XMXG WPS512K8X-XRJXG White Electronic Designs 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability


    Original     		PDF 512Kx8 EDI88512CA-XMXG WPS512K8X-XRJXG EDI88512

    MR2A08AMYS35

    Abstract: AECQ-100 MR2A08AYS35 BGA 8 x 8 tray MR2A08A
    Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A08A 20-years AEC-Q100 MR2A08A 304-bit 1-877-347-MRAM EST170 MR2A08AMYS35 AECQ-100 MR2A08AYS35 BGA 8 x 8 tray

    Untitled

    Abstract: No abstract text available
    Text: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS FEATURES WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.


    Original     		PDF EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8

    EPROM retention

    Abstract: BLF 272 bq4842 bq4852Y BQ4852YMC-85
    Text: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with


    Original     		PDF bq4852Y 512Kx8 304-bit 10-year EPROM retention BLF 272 bq4842 BQ4852YMC-85

    AS5C4008DJ

    Abstract: No abstract text available
    Text: AS5C4008DJ 512Kx 8 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 512Kx8 SRAM ULTRA HIGH SPEED-PLASTIC SRAM REVOLUTIONARY PINOUT M IL IT A R Y TEMPERATURE OPERATING RANGE-55°C to +125°C PIN ASSIGNMENT Top View 36-Pin PSOJ FEATURES • Ultra High Speed, 83MHz Asynchronous Operation


    OCR Scan     		PDF AS5C4008DJ 512Kx RANGE-55 83MHz DS000043

    Untitled

    Abstract: No abstract text available
    Text: A Ç l AUSTIN SEM ICONDUCTOR, INC. SRAM AS5C512K8 512KX8SRAM 512K X 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View) 36-Pin SO J/LC C SMD 5962-95600 MIL-STD-883 FEATURES Ultra High Speed Asynchronous Operation


    OCR Scan     		PDF AS5C512K8 512KX8SRAM 36-Pin MIL-STD-883 Range-55Â DS000043

    synchronous sram

    Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
    Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK


    OCR Scan     		PDF EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832

    256Kx16bit

    Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V


    OCR Scan     		PDF GM76C256C GM76V256C GM76U256C GM76C256CW HY62CT08081E HY62WT08081E HY62K T08081E 32Kx8-bit, 256Kx16bit 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16

    Untitled

    Abstract: No abstract text available
    Text: BENCHMARQ_ bq4015/bq4015Y 512Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power >- Automatic write-protection during power-up/power-down cycles >• Industry-standard 32-pin 512K x 8 pinout >- Conventional SRAM operation;


    OCR Scan     		PDF bq4015/bq4015Y 512Kx8 32-pin bq4015 304-bit bq4015