a20 tssop-8
Abstract: HN58X24512FPIAG Hitachi DSA00279 csp48
Text: HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs and EEPROM February, 2002 Product Marketing Team System Memory Business Unit Semiconductor and Integrated Circuits Hitachi, Ltd. HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs HITACHI Low Power SRAM and EEPROM
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HN58V257A
HN58C256A
HN58C257A
HN58S65A
HN58V65A
HN58V66A
HN58V1001
HN58C1001
HN58S256A
HN58V256A
a20 tssop-8
HN58X24512FPIAG
Hitachi DSA00279
csp48
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3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS
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HB56U132
HB56H132
HB56U232
HB56H232
HN62W454B
512kx8
256kx16
HN62W4416N
16Mbit
1Mx16
3524CP
2MX40
RAM128KX8 DIP
HM624256
HM62832
16Mbit FRAM
Dram 168 pin EDO 8Mx8
hm62256
flash 32 Pin PLCC 16mbit
HN27C1024
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Untitled
Abstract: No abstract text available
Text: STATIC SRAM RAM Random Access Memory 8Kx8 64K QA SOP LH5164AN
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LH5164AN
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BD4822
Abstract: No abstract text available
Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized
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bq4822Y
536-bit
BD4822
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BD4822
Abstract: No abstract text available
Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized
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bq4822Y
10-year
BD4822
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Untitled
Abstract: No abstract text available
Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized
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bq4822Y
10-year
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BD4822
Abstract: No abstract text available
Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized
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bq4822Y
536-bit
BD4822
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Untitled
Abstract: No abstract text available
Text: SM364T8AOM3XGXX May 1995 Rev 1 SMART Modular Technologies SM364T8AOM3XGXX 256KByte 32Kx64 Asynchronous Secondary Cache SRAM Module General Description Features The SM364T8AOM3XGXX is a high performance, 256 Kilobyte asynchronous secondary cache SRAM module
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SM364T8AOM3XGXX
256KByte
32Kx64)
SM364T8AOM3XGXX
82C590
160-pin,
32Kx8
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Untitled
Abstract: No abstract text available
Text: SM364T8AO83XGXX May 1995 Rev 3 SMART Modular Technologies SM364T8AO83XGXX 256KByte 32Kx64 Asynchronous Secondary Cache SRAM Module General Description Features The SM364T8AO83XGXX is a high performance, 256 Kilobyte asynchronous secondary cache SRAM module
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SM364T8AO83XGXX
256KByte
32Kx64)
SM364T8AO83XGXX
160-pin,
32Kx8
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Untitled
Abstract: No abstract text available
Text: SM364TCSQ83XGXX November 1995 Rev 1 SMART Modular Technologies SM364TCSQ83XGXX 256KByte 32Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364TCSQ83XGXX is a high performance, 256 Kilobyte synchronous secondary cache SRAM module. It
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SM364TCSQ83XGXX
256KByte
32Kx64)
SM364TCSQ83XGXX
160-pin,
32Kx32
12/15ns
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SM364TCSP83UI15
Abstract: 32Kx64 D37 connector pcb
Text: SM364TCSP83UI15 August 1996 Rev 3 SMART Modular Technologies SM364TCSP83UI15 256KByte 32Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364TCSP83UI15 is a high performance, 256 Kilobyte synchronous secondary cache SRAM module for
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SM364TCSP83UI15
SM364TCSP83UI15
256KByte
32Kx64)
160-pin,
32Kx32
32Kx64
D37 connector pcb
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cwe3
Abstract: No abstract text available
Text: SM364TCSMB3UI15 February 1997 Rev 0 SMART Modular Technologies SM364TCSMB3UI15 256KByte 32Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364TCSMB3UI15 is a high performance, 256 Kilobyte synchronous secondary cache SRAM module for
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SM364TCSMB3UI15
SM364TCSMB3UI15
256KByte
32Kx64)
160-pin,
32Kx32
cwe3
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Untitled
Abstract: No abstract text available
Text: SM364TCSPM3XGXX May 1995 Rev 1 SMART Modular Technologies SM364TCSPM3XGXX 256KByte 32Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364TCSPM3XGXX is a high performance, 256 Kilobyte synchronous secondary cache SRAM module for
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SM364TCSPM3XGXX
256KByte
32Kx64)
SM364TCSPM3XGXX
82C590
160-pin,
32Kx32
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Untitled
Abstract: No abstract text available
Text: SM364T8AO84XGXX May 1995 Rev 3 SMART Modular Technologies SM364T8AO84XGXX 256KByte 32Kx64 Asynchronous Secondary Cache SRAM Module General Description Features The SM364T8AO84XGXX is a high performance, 256 Kilobyte asynchronous secondary cache SRAM module
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SM364T8AO84XGXX
256KByte
32Kx64)
SM364T8AO84XGXX
160-pin,
32Kx8
|
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Untitled
Abstract: No abstract text available
Text: bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized as 8192 words by 8 bits with an integral real-time clock and CPU supervisor. The CPU supervisor provides a programmable watchdog
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bq4822Y
10-year
536-bit
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Untitled
Abstract: No abstract text available
Text: bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized as 8192 words by 8 bits with an integral real-time clock and CPU supervisor. The CPU supervisor provides a programmable watchdog
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bq4822Y
10-year
536-bit
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1202z
Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
Text: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883
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5962-3829409MXA
5962-3829409MYC
5962-3829409MZA
5962-3829411MXA
5962-382941IMYC
2-3H29411MZA
5962-3829413MX
5962-3829413MYC
5962-3829413MZA
5962-3829415MYC
1202z
MR80C31
J65608
8kx8 sram
LCC48
128KX8 SRAM
5962-8506401MQA
C965608
5962-89X
MR-80C3
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synchronous sram
Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK
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EDH816H64C
EDI2018QC
EDI20181C
EDI20182C
EDI20183C
EDI20184C
EDI20185C
EDI2040C
EDI2041C
EDI2042C
synchronous sram
4Kx1 DRAM
SRAM 6T
SRAM
DRAM 64kx16
edi8832
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8Kx8 eprom
Abstract: 32Kx8 EPROM128KX8 8KX8
Text: VERSAPAC CMOS MEMORY FAMILY SRAM / EPROM/ /EEPROM / FLASH SRAM / EEPROM / FLASH FLASH with Plastic PLCCs EPROM MIXED TEC H N O LO G IES GENERAL DESCRIPTION: The VERSAPAC series of memory modules consist of SRAM, ERO M , EEPEORM or Flash EEPROM devices in ceramic LC C packages (Flash EEPROMs available in
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66-pin90ns
32Kx8
128Kx8
128Kx8
250ns
300ns
DP14314180V-C
8Kx8 eprom
EPROM128KX8
8KX8
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Untitled
Abstract: No abstract text available
Text: pt// 8KX8 BASED Dense-Pac Microsystems, Inc. CMOS SRAM FAMILY DESCRIPTION: The Dense-Pac 8 K X 8 Based Family of Static Random Access M em ories SRAM , com plete w ith memory interface logic and on-board capacitors are available in the organizations and packages described below.
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DPS40128
DPS41129
DPS40192
DPS41193
DPS40256
DPS41257
DPS1124
128KX
DPS91288
DPS8M628
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Untitled
Abstract: No abstract text available
Text: bq4822Y BENCHMARQ RTC Module With 8Kx8 NVSRAM Features General Description >- Integrated SRAM, real-tim e clock, CPU supervisor, crystal, power-fail circuit, an d b attery The bq4822Y RTC Module is a non volatile 65,536-bit SRAM organized as 8192 words by 8 bits w ith a n in
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10-year
bq4822Y
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IAI5
Abstract: No abstract text available
Text: bq4822Y U N IT R O O E - RTC Module with 8Kx8 NVSRAM Features General Description > Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a non volatile 65,536-bit SRAM organized as 8192 words by 8 bits with an in
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10-year
bq4822Y
536-bit
IAI5
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Untitled
Abstract: No abstract text available
Text: ^ bq4822Y BENCHMARQ RTC Module With 8Kx8 NVSRAM Features General Description >• In teg rated SRAM, real-tim e clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a non volatile 65,536-bit SRAM organized as 8192 w ords by 8 b its w ith an in
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bq4822Y
536-bit
28-pin
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nv SRAM cross reference
Abstract: Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM
Text: Memory Products The centerpiece of the Memory Products family is our broad portfolio of Nonvolatile SRAM modules. Built using low-power SRAM, nonvolatile memory controllers and lithium batteries, these modules offer nonvolatile storage that can be read and written
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DS1258AB-XXX
DS1258Y-XXX
DS1220AB-XXX
1220AB-XXX-IND
DS1220AD-XXX
DS1220AD-XXX-IND
DS1225AB-XXX
DS1225AD-XXX
1225AD-XXX-IND
nv SRAM cross reference
Dallas 1225 AB
M48Z128-XXXPM1
ds1265 32pin
2kx8 sram cross reference
bq4010ym
DSI230Y-XXX
S1258
dallas ds1213c
2M x 16 SRAM
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