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    SRAM CROSS REFERENCES Search Results

    SRAM CROSS REFERENCES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-5XRJ11PPXS-014 Amphenol Cables on Demand Amphenol MP-5XRJ11PPXS-014 Flat Silver Satin Modular Crossed wiring Cable, RJ11 / RJ11 14ft Datasheet
    LM103H-3.3/883 Rochester Electronics LLC Two Terminal Voltage Reference Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    LM103H-3.3 Rochester Electronics LLC Two Terminal Voltage Reference, 1 Output, 3.3V, BIPolar, MBCY2, HERMETIC SEALED, TO-46, METAL, CAN-2 Visit Rochester Electronics LLC Buy
    AD584IR Rochester Electronics LLC AD584 - Three Terminal Voltage Reference, 3 Output, 10V Visit Rochester Electronics LLC Buy

    SRAM CROSS REFERENCES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SRAM Cross References

    Abstract: UT9Q512K8 SRAM SAMSUNG UT8Q512K8 36E-4 weibull test data 19E4
    Text: Single Event Effects Qualification UT8Q512K8 RQ02 Lot 6ZVL04 4Mbit SRAM 7/21/03 Craig Hafer 719-594-8319 craig.hafer@aeroflex.com SUMMARY-Single event effects qualification testing was performed on the UTMC 4Mbit SRAM, (Samsung Rev C die), Lot 6ZVL04, at the Lawrence Berkeley Laboratory using


    Original     		PDF UT8Q512K8 6ZVL04 6ZVL04, 88-inch 5E-11 9E-10 3E-09 7E-08 0E-11 SRAM Cross References UT9Q512K8 SRAM SAMSUNG UT8Q512K8 36E-4 weibull test data 19E4

    NE213

    Abstract: BC501 XC4010E scintillator PLCC84 package transistor BC501 A274 A292 PLCC84 XC4010XL
    Text: NEUTRON SINGLE EVENT UPSETS IN SRAM-BASED FPGAs* Mattias Ohlsson Peter Dyreklev Karin Johansson Ericsson Saab Avionics AB Electromagnetic Technology Division 581 88 Linköping, Sweden and Peter Alfke Xilinx, Inc. 2100 Logic Drive, San Jose CA 95124, USA Abstract


    Original     		PDF NE213 BC501 XC4010E scintillator PLCC84 package transistor BC501 A274 A292 PLCC84 XC4010XL

    736e-02

    Abstract: cross reference 4533 UT7Q512
    Text: UTMC Application Note A Radiation Tolerant 4M SRAM for Space Applications Abstract Total ionizing dose and heavy ion single event effects data are presented for a radiation tolerant 100ns 4M SRAM UT7Q512 . The SRAM is shown to be resistant to between 20 and 35krad(Si) of total dose radiation (depending on the particular lot examined) at a relatively high dose rate of 46rad(Si)/s. The SRAM is


    Original     		PDF 100ns UT7Q512) 35krad 46rad 128MeV-cm 10-year 88-Inch NS-30, NS-29, 736e-02 cross reference 4533 UT7Q512

    fpga radiation

    Abstract: SRAM Cross References Upset XQR4036XL RAM SEU UPS control circuitry RAM EDAC SEU Upsets Single Event Upset FPGA
    Text: Single Event Effects Testing of Xilinx FPGAs Dr. Gary Lum Lockheed Martin, Sunnyvale, CA and Glen Vandenboom Xilinx, Inc. San Jose, CA Introduction Advanced Field Programmable Gate Arrays FPGAs operating at 3.3V were tested for single event effects (SEE) by


    Original     		PDF XQR4036XL fpga radiation SRAM Cross References Upset RAM SEU UPS control circuitry RAM EDAC SEU Upsets Single Event Upset FPGA

    ICCAVR

    Abstract: ATmega 8515 C language STK 300 avr project ATmega 8515 examples atmel avr
    Text: ICCAVR tm ImageCraft AVR C Compiler and development environment Version 6 iMAGEcraft tm tm ICCAVR – C CROSS COMPILER FOR THE ATMEL AVR INTRODUCTION _ 4 IMPORTANT: Registering the Software _5


    Original     		PDF ICC11 NoICE11, ICC12 BDM-12, ICC16 1/95/98/NT ICC11/12/16 ICCAVR ATmega 8515 C language STK 300 avr project ATmega 8515 examples atmel avr

    PE-67583

    Abstract: Ericsson FTTX ericsson isdn modem pcm circuit EPD segment driver tms 3631 an
    Text: October 1998 PBM 990 08/1MQ ATM Multi Service Chip Description Key Features The ATM Multi Service Chip is a cost efficient solution for multi service access applications. It is especially suited for ADSL, VDSL, FTTx and HFC applications, where all services are transported over ATM.


    Original     		PDF 08/1MQ 240-pin 1/1522-PBM 08/1MQ PE-67583 Ericsson FTTX ericsson isdn modem pcm circuit EPD segment driver tms 3631 an

    45420

    Abstract: SN10 TM1019 SRAM Cross References RAM SEU
    Text: SCMOS2 SCMOS2 Technology MG1RT Sea of Gates Family – Tolerance to Radiation 1. Abstract This paper proposes a review of the data gathered during radiation testing for the MG1RT sea of gates family manufactured using the Radiation Tolerant version of the


    Original     		PDF NT94055, 9849/92/NL, 45420 SN10 TM1019 SRAM Cross References RAM SEU

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT8Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs


    Original     		PDF UT8Q512K32E 16Mbit) 512Kx8 32-bit

    EHR96135

    Abstract: 100KRAD TM1019 EHR96
    Text: Evaluation Report SCMOS2 Radiation Tolerant Technology MG1RT Sea of Gates Family - Tolerance to Radiation by Thierry CORBIERE 1 Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during radiation testing for the MG1RT sea of gates


    Original     		PDF NT94055, 9849/92/NL, EHR96135 Oct-96 100KRAD TM1019 EHR96

    Memories

    Abstract: UT8CR512K32
    Text: Standard Products UT8CR512K32 16 Megabit SRAM Data Sheet March 2009 www.aeroflex.com/Memories INTRODUCTION FEATURES ‰ 17ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8CR512K32 Memories

    A82C250

    Abstract: laptop adapter circuit by delta electronics adp 8051 infineon 80C51 Development Board 80c154 intel intel 83c154 INSTRUCTION SET DM164 89C51RD2 parallel programming 8051 projects equivalent des circuit integre ttl
    Text: Micro-Catalog-EU-xx 06.04.2000 15:00 Uhr Seite 1 micro catalog E E U R O P E A D I T I O N N 8-bit • 16-bit · 32-bit SPRING 2000 Technical Support and Order Hotline in English language Technischer Support und Bestell-Hotline in deutscher Sprache Service technique et commande par téléphone en langue française


    Original     		PDF 16-bit 32-bit D-55444 D-55129 D-75433 A82C250 laptop adapter circuit by delta electronics adp 8051 infineon 80C51 Development Board 80c154 intel intel 83c154 INSTRUCTION SET DM164 89C51RD2 parallel programming 8051 projects equivalent des circuit integre ttl

    LINFlex PROTOCOL

    Abstract: MPC5605 MPC5605B linflex uart example MPC5606B linflex MPC5607B MPC5606B adc MPC5607 mpc5605B reference manual
    Text: Freescale Semiconductor Product Brief Document Number: MPC5607BPB Rev. 7, 08/2010 This document contains preview information on a new product that may be in a design phase or under development. Freescale reserves the right to change or discontinue this product without notice.


    Original     		PDF MPC5607BPB MPC5607B 32-bit MPC560xB 32-bit LINFlex PROTOCOL MPC5605 MPC5605B linflex uart example MPC5606B linflex MPC5606B adc MPC5607 mpc5605B reference manual

    vhdl code for 32 bit pn sequence generator

    Abstract: vhdl code 8 bit LFSR vhdl code 16 bit LFSR vhdl code for pseudo random sequence generator vhdl code for 7 bit pseudo random sequence generator vhdl code for pn sequence generator qpsk modulation VHDL CODE 4 bit pn sequence generator vhdl code for pn sequence generator using lfsr vhdl code 12 bit LFSR
    Text: Application Note: Virtex Series, Virtex-II Series, and Spartan-II Family R PN Generators Using the SRL Macro Author: Andy Miller and Michael Gulotta XAPP211 v1.2 June 14, 2004 Summary Pseudo-random Noise (PN) generators are at the heart of every spread spectrum system.


    Original     		PDF XAPP211 16-bit SRL16 vhdl code for 32 bit pn sequence generator vhdl code 8 bit LFSR vhdl code 16 bit LFSR vhdl code for pseudo random sequence generator vhdl code for 7 bit pseudo random sequence generator vhdl code for pn sequence generator qpsk modulation VHDL CODE 4 bit pn sequence generator vhdl code for pn sequence generator using lfsr vhdl code 12 bit LFSR

    pn sequence generator

    Abstract: vhdl code 16 bit LFSR verilog code 16 bit LFSR verilog code 8 bit LFSR vhdl code for pseudo random sequence generator vhdl code for 32 bit pn sequence generator vhdl code 8 bit LFSR verilog code for pseudo random sequence generator in qpsk modulation VHDL CODE vhdl code for 9 bit parity generator
    Text: Application Note: Virtex Series, Virtex-II Series, and Spartan-II Family R PN Generators Using the SRL Macro Author: Andy Miller and Michael Gulotta XAPP211 v1.1 January 9, 2001 Summary Pseudo-random Noise (PN) generators are at the heart of every spread spectrum system.


    Original     		PDF XAPP211 16-bit SRL16 pn sequence generator vhdl code 16 bit LFSR verilog code 16 bit LFSR verilog code 8 bit LFSR vhdl code for pseudo random sequence generator vhdl code for 32 bit pn sequence generator vhdl code 8 bit LFSR verilog code for pseudo random sequence generator in qpsk modulation VHDL CODE vhdl code for 9 bit parity generator

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT9Q512K32E RadTol product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a


    Original     		PDF UT9Q512K32E 16Mbit)

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT9Q512E 512K x 8 RadTol SRAM Data Sheet September, 2008 INTRODUCTION The UT9Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable E , an


    Original     		PDF UT9Q512E

    Memories

    Abstract: No abstract text available
    Text: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2009 www.aeroflex.com/memories FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R512K8 Memories

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8Q512E 512K x 8 RadTol SRAM Data Sheet November 11, 2008 INTRODUCTION The UT8Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable E , an


    Original     		PDF UT8Q512E

    spc560b

    Abstract: SPC560B40L3 TN0108 SPC560B40 SPC560B50L3 e200z0
    Text: TN0108 Technical note Migration differences between SPC560B4x/50 and SPC560C4x/50 512KB Cut 1 to Cut 2 Introduction STMicroelectronics have created an e200Z0 core-based Power Architecture family of devices targeted at automotive body applications. This document details the changes that have been implemented going between Cut 1.1 and


    Original     		PDF TN0108 SPC560B4x/50 SPC560C4x/50 512KB e200Z0 spc560b SPC560B40L3 TN0108 SPC560B40 SPC560B50L3

    MPC5604C

    Abstract: mpc5604b SPC560B4 SPC560C4 linflex spc560b Nexus S JTAG freescale
    Text: Freescale Semiconductor Application Note Document Number: AN3864 Rev. 0, 05/2009 Migration Differences Between MPC5604B/C / SPC560B/C4 512 K Cut 1 to Cut 2 by: Alasdair Robertson Microcontroller Solutions Group, East Kilbride 1 Introduction Freescale and ST Microelectronics have created an


    Original     		PDF AN3864 MPC5604B/C SPC560B/C4 e200Z0 MPC5604B MPC5604C SPC560B4 SPC560C4 MPC5604C SPC560C4 linflex spc560b Nexus S JTAG freescale

    SRAM 64KX8 5V

    Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
    Text: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164


    OCR Scan     		PDF AS7C164 AS7C256 AS7C512 AS7C513 AS7C3513 AS7C1024 AS7C31024 AS7C1026 AS7C31026 AS7C1025 SRAM 64KX8 5V 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40

    AS4C2M8

    Abstract: No abstract text available
    Text: A Till ! ni T .i h I e ( *I i i m i e il i s L (h i i t 'l l i \ Page number Product guide. 3 Cross


    OCR Scan     		PDF AS7C164 AS7C256L AS7C52 AS7C5256L AS7C259 AS7C259L AS7C512L AS7C35 AS7C3512L AS7C1024 AS4C2M8

    PE-67583

    Abstract: Ericsson Core Network Packet MSC ERICSSON
    Text: ERICSSON ^ October 1998 PBM 990 08/1MQ ATM Multi Service Chip Description Key Features The ATM Multi Service Chip is a cost efficient solution for multi service access applications. It is especially suited for ADSL, VDSL, FTTx and HFC applications, where all services are transported over ATM.


    OCR Scan     		PDF 08/1MQ 240-pin 1/1522-PBM PE-67583 Ericsson Core Network Packet MSC ERICSSON

    stopwatch using 8051 microcontroller

    Abstract: 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288
    Text: SHORT tMWì DALLAS SEMICONDUCTOR APRIL 1996 http://www.dalsemi.com For the latest information about every product we make, visit our World Wide Web site. You’ll find the most complete, up-to-date information about our products available seven days a week, 24 hours a day. H ere’s just some o f what you’ll find:


    OCR Scan     		PDF 150-mil S2105 S2105 stopwatch using 8051 microcontroller 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288