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    SRAM SERIAL Search Results

    SRAM SERIAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-SAS2MUKPTR-000.5 Amphenol Cables on Demand Amphenol CS-SAS2MUKPTR-000.5 External Mini-SAS Cable (Pull-Tab) - 4x Mini-SAS (SFF-8088) to 4x Mini-SAS (SFF-8088) 0.5m Datasheet
    CS-SAS2MUKPTR-002 Amphenol Cables on Demand Amphenol CS-SAS2MUKPTR-002 External Mini-SAS Cable (Pull-Tab) - 4x Mini-SAS (SFF-8088) to 4x Mini-SAS (SFF-8088) 2m Datasheet
    CS-SAS2MUKPTR-006 Amphenol Cables on Demand Amphenol CS-SAS2MUKPTR-006 External Mini-SAS Cable (Pull-Tab) - 4x Mini-SAS (SFF-8088) to 4x Mini-SAS (SFF-8088) 6m Datasheet
    CS-SASMINTOHD-002 Amphenol Cables on Demand Amphenol CS-SASMINTOHD-002 2m (6.6') External 4x Mini-SAS to HD Mini-SAS Cable - 4x Mini-SAS HD (SFF-8644) to 4x Mini-SAS 26-pin (SFF-8088) Passive Copper Cable [28 AWG] - 6G SAS 2.1 / iPass+™ HD Datasheet
    CS-SASMINTOHD-003 Amphenol Cables on Demand Amphenol CS-SASMINTOHD-003 3m (9.8') External 4x Mini-SAS to HD Mini-SAS Cable - 4x Mini-SAS HD (SFF-8644) to 4x Mini-SAS 26-pin (SFF-8088) Passive Copper Cable [28 AWG] - 6G SAS 2.1 / iPass+™ HD Datasheet

    SRAM SERIAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28F3202C3

    Abstract: 29066
    Text: PRODUCT PREVIEW 3 VOLT ADVANCED+ STACKED CHIP SCALE PACKAGE MEMORY 16-Mbit Flash + 2-Mbit SRAM - 28F1602C3 16-Mbit Flash + 4-Mbit SRAM - 28F1604C3 32-Mbit Flash + 4-Mbit SRAM - 28F3204C3 32-Mbit Flash + 2-Mbit SRAM - 28F3202C3 ! Flash Memory Plus SRAM


    Original     		PDF 16-Mbit 28F1602C3 32-Mbit 28F3204C3 28F1604C3 28F3202C3 16-Mb 32-Mb 28F3202C3 29066

    GVT71128DA36

    Abstract: GVT71256DA18
    Text: ADVANCE INFORMATION GALVANTECH, INC. GVT71128DA36/GVT71256DA18 128K X 36/256K X 18 SYNCHRONOUS SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 36 SRAM 256K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		PDF GVT71128DA36/GVT71256DA18 36/256K GVT71128DA36 GVT71256DA18 072x36 144x18 71128DA36 71256DA18

    23K256

    Abstract: 8631 23A256 23K640 256 kbyte Low Power Serial SRAM 6166 ram pic with spi
    Text: Serial SRAM Memory Serial SRAM Memory Family www.microchip.com/SRAM Serial SRAM Memory Do you need more RAM in your application? Does it need to be small, cheap, fast and low power? Are you completing a design and need just a little more volatile memory? Do you need a simple, inexpensive way to add RAM without


    Original     		PDF R60-4-227-8870 DS22127A DS22127A* 23K256 8631 23A256 23K640 256 kbyte Low Power Serial SRAM 6166 ram pic with spi

    GVT71256T18

    Abstract: DQ974
    Text: ADVANCE INFORMATION GALVANTECH, INC. SYNCHRONOUS CACHE TAG SRAM PIPELINED OUTPUT GVT71256T18 256K X 18 SYNCHRONOUS TAG SRAM 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED REGISTERED INPUTS FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		PDF GVT71256T18 71256T18 access/10ns GVT71256T18 DQ974

    FPGA with i2c eeprom

    Abstract: EEPROM I2C atmel ,vhdl code for implementation of eeprom verilog code for i2c vhdl code for i2c interface in fpga verilog code for implementation of eeprom vhdl code for i2c 256X8 ram A3P400 APA150
    Text: Application Note AC214 Embedded SRAM Initialization Using External Serial EEPROM Introduction Embedded SRAM blocks have become common in FPGA design. Since SRAM is a volatile memory type, the stored data vanishes in the absence of power. When power is restored, the memory is empty. As many


    Original     		PDF AC214 FPGA with i2c eeprom EEPROM I2C atmel ,vhdl code for implementation of eeprom verilog code for i2c vhdl code for i2c interface in fpga verilog code for implementation of eeprom vhdl code for i2c 256X8 ram A3P400 APA150

    100-PIN

    Abstract: GVT71256ZC36 GVT71512ZC18
    Text: ADVANCE INFORMATION GVT71512ZC36/GVT71A24ZC18 512K X 36/1M X 18 ZBL SRAM GALVANTECH, INC. SYNCHRONOUS ZBL SRAM PIPELINED OUTPUT 512K x 36 SRAM 1M x 18 SRAM +3.3V SUPPLY, +3.3V or +2.5V I/O FEATURES GENERAL DESCRIPTION • The GVT71512ZC36 and GVT71A24ZC18 SRAMs are


    Original     		PDF GVT71512ZC36/GVT71A24ZC18 36/1M GVT71512ZC36 GVT71A24ZC18 288x36 576x18 71512ZC36 71A24ZC18 100-PIN GVT71256ZC36 GVT71512ZC18

    Equivalent of sw2 354

    Abstract: sw2 354 8080 microprocessor Architecture Diagram cmos power TCP 8108 oasis F-173
    Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Information FEATURES: • Organized as 512K x16 Flash + 128K x16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation – Read from or write to SRAM while


    Original     		PDF SST32LH802 Sec498404 Equivalent of sw2 354 sw2 354 8080 microprocessor Architecture Diagram cmos power TCP 8108 oasis F-173

    Untitled

    Abstract: No abstract text available
    Text: CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F[1] SRAM integrates 524,288 × 36 and 1,048,576 × 18 SRAM cells


    Original     		PDF CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F 18-Mbit CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F

    Untitled

    Abstract: No abstract text available
    Text: CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description The CY7C1380D/CY7C1380F/CY7C1382D/CY7C1382F[1] SRAM integrates 524,288 × 36 and 1,048,576 × 18 SRAM cells


    Original     		PDF CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F 18-Mbit CY7C1380D/CY7C1380F/CY7C1382D/CY7C1382F

    MC19

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS PZ3320C/PZ3320N 320 macrocell SRAM CPLD Preliminary specification IC27 Data Handbook Philips Semiconductors 1998 Jul 22 Philips Semiconductors Preliminary specification 320 macrocell SRAM CPLD PZ3320C/PZ3320N FEATURES DESCRIPTION • 320 macrocell SRAM based CPLD


    Original     		PDF PZ3320C/PZ3320N PZ3320 MC19

    Untitled

    Abstract: No abstract text available
    Text: QDR SRAM CONSORTIUM RELEASES SPECIFICATIONS High-Bandwidth Networking SRAM Specifications Are Now Available SAN JOSE, Calif., February 16, 2000 - The QDR™ SRAM Consortium, consisting of Cypress Semiconductor NYSE: CY ; IDT (Nasdaq: IDTI); and Micron Technology Inc. (NYSE:


    Original     		PDF

    CY7C1380D

    Abstract: AN1064 CY7C1380F CY7C1382D CY7C1382F
    Text: CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F 18-Mbit 512K x 36/1M x 18 Pipelined SRAM Functional Description [1] Features • Supports bus operation up to 250 MHz The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F SRAM integrates 524,288 x 36 and 1,048,576 x 18 SRAM


    Original     		PDF CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F 18-Mbit 36/1M CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F CY7C1380F CY7C1382F CY7C1380D AN1064 CY7C1382D

    EPCS16

    Abstract: epc1213 EPCS4 EPF10K100 EP20K200E EP20K400E EP20K60E EP2S15 EP2S30 EP2S60
    Text: Chapter 1. Altera Configuration Devices CF52001-2.0 Introduction During device operation, Altera FPGAs store configuration data in SRAM cells. Because SRAM memory is volatile, the SRAM cells must be loaded with configuration data each time the device powers up. You can


    Original     		PDF CF52001-2 EPC16, EPF81500A EP1S10 EPCS16 EPCS64 epc1213 EPCS4 EPF10K100 EP20K200E EP20K400E EP20K60E EP2S15 EP2S30 EP2S60

    EPCS64

    Abstract: EPCS16 epc1213 EP20K200E EP20K400E EP20K60E EP2S15 EP2S30 EP2S60 EPC1441
    Text: 1. Altera Configuration Devices CF52001-2.3 Introduction During device operation, Altera FPGAs store configuration data in SRAM cells. Because SRAM memory is volatile, the SRAM cells must be loaded with configuration data each time the device powers up. You can


    Original     		PDF CF52001-2 EPC16, EPCS16 EPCS64 epc1213 EP20K200E EP20K400E EP20K60E EP2S15 EP2S30 EP2S60 EPC1441

    a20 tssop-8

    Abstract: HN58X24512FPIAG Hitachi DSA00279 csp48
    Text: HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs and EEPROM February, 2002 Product Marketing Team System Memory Business Unit Semiconductor and Integrated Circuits Hitachi, Ltd. HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs HITACHI Low Power SRAM and EEPROM


    Original     		PDF HN58V257A HN58C256A HN58C257A HN58S65A HN58V65A HN58V66A HN58V1001 HN58C1001 HN58S256A HN58V256A a20 tssop-8 HN58X24512FPIAG Hitachi DSA00279 csp48

    AN1064

    Abstract: CY7C1380D CY7C1380F CY7C1382D CY7C1382F INTEL-PENTIUM 32D10
    Text: CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F 18-Mbit 512K x 36/1M x 18 Pipelined SRAM Features Functional Description The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F[1] SRAM integrates 524,288 x 36 and 1,048,576 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit


    Original     		PDF CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F 18-Mbit 36/1M CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F AN1064 CY7C1380D CY7C1380F CY7C1382D CY7C1382F INTEL-PENTIUM 32D10

    100-PIN

    Abstract: GVT71256ZB36 GVT71512ZB18 4g81
    Text: PRELIMINARY GVT71256ZB36/GVT71512ZB18 256K X 36/512K X 18 ZBL SRAM GALVANTECH, INC. SYNCHRONOUS 256K x 36 SRAM ZBL SRAM 512K x 18 SRAM FLOW-THRU OUTPUT +3.3V SUPPLY, +3.3V or +2.5V I/O FEATURES • • • • • • • • • • • • • • • Zero Bus Latency, no dead cycles between write and read


    Original     		PDF GVT71256ZB36/GVT71512ZB18 36/512K 100MHz capabi36/GVT71512ZB18 71256ZB36 access/10ns 71512ZB18 100-PIN GVT71256ZB36 GVT71512ZB18 4g81

    AN1064

    Abstract: CY7C1386D CY7C1386F CY7C1387D CY7C1387F
    Text: CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F 18-Mbit 512K x 36/1 Mbit x 18 Pipelined DCD Sync SRAM Functional Description [1] Features • Supports bus operation up to 250 MHz The CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F SRAM integrates 512K x 36/1M x 18 SRAM cells with


    Original     		PDF CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F 18-Mbit CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F 36/1M CY7C1386F AN1064 CY7C1386D CY7C1387D CY7C1387F

    AN1064

    Abstract: CY7C1386D CY7C1386F CY7C1387D CY7C1387F
    Text: CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F 18-Mbit 512K x 36/1 Mbit x 18 Pipelined DCD Sync SRAM Functional Description [1] Features • Supports bus operation up to 250 MHz The CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F SRAM integrates 512K x 36/1M x 18 SRAM cells with


    Original     		PDF CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F 18-Mbit CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F 36/1M CY7C1386F AN1064 CY7C1386D CY7C1387D CY7C1387F

    CY7C1366C

    Abstract: CY7C1367C
    Text: CY7C1366C/CY7C1367C 9-Mbit 256K x 36/512K x 18 Pipelined DCD Sync SRAM Features Functional Description The CY7C1366C/CY7C1367C SRAM[1] integrates 256K x 36 and 512K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst


    Original     		PDF CY7C1366C/CY7C1367C 36/512K CY7C1366C/CY7C1367C CY7C1366C CY7C1367C

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification 320 macroceil SRAM CPLD PZ3320C/PZ3320N FEATURES DESCRIPTION • 320 macrocell SRAM based CPLD The PZ3320 device is a member of the CoolRunner family of high-density SRAM-based CPLDs Complex Programmable Logic


    OCR Scan     		PDF PZ3320C/PZ3320N 1-888-CoolPLD PZ3320

    Atmel 0347

    Abstract: I0358 Atmel 0342 avr aa26 FIF12 4Kx8 Dual-Port Static RAM capacitor CTC1 sbc hc 8352 147P3 AT40K
    Text: Features • Monolithic Field Programmable System Level Integrated Circuit - AT40K SRAM-based FPGA with Embedded High-performance RISC AVR Core and Extensive Data and Instruction SRAM • 10,000 to 40,000 Gates of Patented SRAM-based AT40K FPGA with FreeRAM


    OCR Scan     		PDF AT40K AT94K 240-lead, 352-ball Atmel 0347 I0358 Atmel 0342 avr aa26 FIF12 4Kx8 Dual-Port Static RAM capacitor CTC1 sbc hc 8352 147P3

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification 320 macrocell SRAM CPLD PZ3320C/PZ3320N FEATURES DESCRIPTION • 320 macrocell SRAM based CPLD The PZ3320 device is a m em ber of the CoolRunner fam ily of high-density SRAM -based CPLDs Com plex Program mable Logic


    OCR Scan     		PDF PZ3320C/PZ3320N PZ3320 LQFP160: OT435-1

    K02AE

    Abstract: No abstract text available
    Text: Features • Monolithic Field Programmable System Level Integrated Circuit - AT40K SRAM-based FPGA with Embedded High-performance RISC AVR Core and Extensive Data and Instruction SRAM • 10,000 to 40,000 Gates of Patented SRAM-based AT40K FPGA with FreeRAM


    OCR Scan     		PDF AT40K AT94K 240-lead, 352-ball K02AE