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    SS8050 SOT-23 Y1 Search Results

    SS8050 SOT-23 Y1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    SS8050 SOT-23 Y1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ss8050 sot-23

    Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 SS8050 OT-23 SS8550 ss8050 sot-23 SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz PDF

    SS8050

    Abstract: ss8050y1
    Text: SS8050 NPN 3 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued) Characteristics


    Original     		SS8050 OT-23 SS8050 80mAdc) ss8050y1 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz PDF

    ss8050 sot-23

    Abstract: SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23
    Text: SS8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		OT-23 SS8050 OT-23 SS8550 800mA 800mA, 30MHz 100mA ss8050 sot-23 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23 PDF

    SS8050 sot-23 Y1

    Abstract: Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8050 Pb z Collector Current. IC= 1.5A） z Complementary To SS8550. z Collector dissipation:PC=300mW(TC=25℃ Lead-free APPLICATIONS z High Collector Current. SOT-23


    Original     		SS8050 SS8550. 300mW OT-23 BL/SSSTC086 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1 PDF

    SS8050

    Abstract: 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1
    Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES      A L Complimentary to SS8550 Power Dissipation PCM : 0.3W Collector Current


    Original     		SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz 26-Oct-2009 SS8050 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Power dissipation PCM : 0.3 W Collector Current ICM : 1.5 A Collector-base voltage V BR CBO : 40 V


    Original     		SS8050 OT-23 500mA 30MHz 01-June-2005 PDF

    SS8050

    Abstract: ss8050 sot-23 ss8050y1 MARKING JM
    Text: SS8050 NPN General Purpose Transistors SOT-23 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base voltage Emitter-Base VOItage Collector Current-Continuous S ym bol V a lu e V CEO VCBO 25 40 6 .0 1500 vebo ic Characteristics Total Device Dissipation FR-5 Board 1


    OCR Scan     		SS8050 OT-23 TA-25 SS8050 ss8050 sot-23 ss8050y1 MARKING JM PDF