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    Text: SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 20A TO-252 RDS(ON) (mĪ©) Max D 30 @VGS = 10V G 55 @VGS = 4.5V S D FEATURES ā—† Super high dense cell design for low RDS(ON). G ā—† Rugged and reliable. ā—† TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		PDF SSD2030N O-252 O-252