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    Text: SSD3030P P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TO-252 RDS(ON) (mΩ) Max D 25 @VGS = -10V G 45 @VGS = -5V -30A -30V S 55 @VGS = -4.5V D FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable. G TO-252 package.


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    SSD3030P O-252 O-252 PDF