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    Text: SSM9921 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 50 @VGS = -4.5V -4.5A -20V 1 80 @VGS = -2.5V 2 3 4 160 @VGS = -1.8V D2 (5, 6) D1 (7, 8) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable.


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