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    SSM9926 Search Results

    SSM9926 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM9926M Silicon Standard DUAL N CHANNEL ENHANCEMENT MODE POWER MOSFETS Original PDF

    SSM9926 Datasheets Context Search

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    SSM9926GM

    Abstract: 9926gm marking codes transistors SSs
    Text: SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS 20V R DS ON 30mΩ ID 6A DESCRIPTION The SSM9926GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC


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    PDF SSM9926GM SSM9926GM 9926gm marking codes transistors SSs

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    Abstract: No abstract text available
    Text: SSM9926TGO N-CHANNEL ENHANCEMENT MODE 8 POWER MOSFET A t PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Surface mount package S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching,


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    PDF SSM9926TGO

    SSM9926M

    Abstract: No abstract text available
    Text: SSM9926M DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive D2 D2 D1 D1 Low drive current SO-8 20V RDS ON 30mΩ 6A ID G2 S2 Surface-mount package BV DSS G1 S1 Description Power MOSFETs from Silicon Standard provide the


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    PDF SSM9926M SSM9926M

    Untitled

    Abstract: No abstract text available
    Text: SSM9926EO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance G2 S2 D2 Capable of 2.5V gate drive Low drive current S2 TSSOP-8 S1 G1 S1 D1 BV DSS 20V R DS ON 28mΩ ID 4.6A Surface-mount package Description Power MOSFETs from Silicon Standard provide the


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    PDF SSM9926EO

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    Abstract: No abstract text available
    Text: SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance G2 S2 D2 Capable of 2.5V gate drive Low drive current S2 TSSOP-8 S1 G1 S1 D1 BV DSS 20V R DS ON 28mΩ ID 4.6A Surface-mount package Description Power MOSFETs from Silicon Standard provide the


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    PDF SSM9926GEO

    Untitled

    Abstract: No abstract text available
    Text: SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary SO-8 8 VDS V 7 RDS(ON) (mΩ) Max ID (A) 6 5 30 @VGS = 4.0V 6A 20V 1 40 @VGS = 2.5V 2 3 4 D2 (5, 6) D1 (7, 8) FEATURES ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable.


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    PDF SSM9926

    Untitled

    Abstract: No abstract text available
    Text: SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET A PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Low drive current S1 S2 Surface mount package DESCRIPTION BVDSS 20V The Advanced Power MOSFETs from Silicon Standard Corp. RDS ON 28mΩ


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    PDF SSM9926O

    SSM9926EM

    Abstract: No abstract text available
    Text: SSM9926EM N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive D2 D2 D1 D1 Low drive current SO-8 20V RDS ON 30mΩ 6A ID G2 S2 Surface-mount package BV DSS G1 S1 Description Power MOSFETs from Silicon Standard provide the


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    PDF SSM9926EM SSM9926EM

    SSM9926A

    Abstract: diode ja
    Text: SSM9926A Comman Drain Dual N-Channel Enhancement Mode MOSFET Product Summary SOP-8 8 VDS V ID (A) 20V 6A 7 RDS(ON) (mΩ) Max 6 5 30 @VGS = 4.0V 1 40 @VGS = 2.5V 2 3 4 D2 (5, 6) D1 (7, 8) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.


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    PDF SSM9926A SSM9926A diode ja

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    Abstract: No abstract text available
    Text: SS6821 Single-Cell Lithium-Ion Battery Protection IC n n FEATURES l Reduction in board size with miniature SOT-23-5 package and fewer external components. l Ultra-low quiescent current at 7µA VCC=3.5V . l Ultra-low power-down current at 0.6 µ A (V CC=2.2V).


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    PDF SS6821 SS6821 OT-23-5

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    Abstract: No abstract text available
    Text: SS6802 Two-Cell Lithium-Ion Battery Protection IC FEATURES DESCRIPTION Ultra-low quiescent current at 10µA V CC=7V, VC=3.5V . Ultra-low power-down current at 0.2 µ A (V CC =3.8V, VC=1.9V). Wide supply range: 2V to 18V. Precision over-charge protection voltage


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    PDF SS6802 SS6802A SS6802B SS6802C SS6802

    Lithium-Ion Battery Charger sot 23-5

    Abstract: 12v battery overcharge protection circuit diagram overcharge protection circuit diagram SS6821 SS6821A SS6821ACV SS6821B SS6821C SS6821D 12v battery overcharge protection circuit
    Text: SS6821 Single-Cell Lithium-Ion Battery Protection IC FEATURES DESCRIPTION The SS6821 battery protection IC is designed to protect a lithium-ion battery from damage or reduced lifetime due to over-charge, over-discharge, and/or over-current in single-cell lithium-ion battery powered systems, such as


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    PDF SS6821 SS6821 OT-23-5 SS6821A Lithium-Ion Battery Charger sot 23-5 12v battery overcharge protection circuit diagram overcharge protection circuit diagram SS6821A SS6821ACV SS6821B SS6821C SS6821D 12v battery overcharge protection circuit