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    Abstract: No abstract text available
    Text: SSM9973M DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low gate charge Simple drive requirement Surface-mount package D1 DSS 60V DS ON 80mΩ BV D2 R D2 D1 I 3.9A D G2 S2 SO-8 S1 G1 Description Advanced Power MOSFETs from Silicon Standard use a 'trench" process to provide the best combination of fast switching,


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    SSM9973GM

    Abstract: No abstract text available
    Text: SSM9973GM Dual N-channel Enhancement-mode Power MOSFETs BVD2 Simple drive requirement D2 Lower gate charge D1 D1 Fast switching characteristics R I G2 S2 Pb-free; RoHS compliant. SO-8 S1 BVDSS 60V R DS ON 80mΩ ID 3.9A G1 DESCRIPTION Advanced Power MOSFETs from Silicon Standard provide the


    Original     		PDF SSM9973GM SSM9973M SSM9973GM