Untitled
Abstract: No abstract text available
Text: SSOP64-P-525-0.80-BK Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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SSOP64-P-525-0
80-BK
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Untitled
Abstract: No abstract text available
Text: SSOP64-P-525-0.80-K Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.34 TYP. 3 版/96.12.5
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SSOP64-P-525-0
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Untitled
Abstract: No abstract text available
Text: SSOP64-P-525-0.80-K Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.34 TYP. 3/Dec. 5, 1996
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SSOP64-P-525-0
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64P2G-A
Abstract: No abstract text available
Text: 64P2G-A Plastic 64pin 525mil SSOP EIAJ Package Code SSOP64-P-525-0.80 JEDEC Code – Weight g 1.59 Lead Material Alloy 42 e I2 33 E Recommended Mount Pad F Symbol 1 32 A D y b A1 L e A2 L1 HE e1 64 b2 c Detail F A A1 A2 b c D E e HE L L1 y b2 e1 I2 Dimension in Millimeters
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64P2G-A
64pin
525mil
SSOP64-P-525-0
64P2G-A
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MSM5432128
Abstract: No abstract text available
Text: Pr E2L0045-17-Y1 el im DESCRIPTION The MSM5432126/8 is a new generation Graphics DRAM organized in a 131,072-word ¥ 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI's CMOS silicon gate process technology. The device operates with a single 5 V power supply.
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E2L0045-17-Y1
MSM5432126/8
072-word
32-bit
32-bit
MSM5432128
64-pin
SSOP64-P-525-0
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MSM5416272
Abstract: No abstract text available
Text: E2L0020-17-Y1 ¡ Semiconductor MSM5416272 ¡ Semiconductor This version: Jan. 1998 MSM5416272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit
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E2L0020-17-Y1
MSM5416272
144-Word
16-Bit
MSM5416272
144-word
16-bit
512-word
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MSM54V16272
Abstract: No abstract text available
Text: E2L0024-17-Y1 ¡ Semiconductor MSM54V16272 ¡ Semiconductor This version: Jan. 1998 MSM54V16272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit
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E2L0024-17-Y1
MSM54V16272
144-Word
16-Bit
MSM54V16272
144-word
16-bit
512-word
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MSM5416263
Abstract: srt 0110
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM5416263
SSOP64-P-525-0
MSM5416263
srt 0110
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ns741
Abstract: MSM5416273 l1741
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM5416283
Abstract: FJDS5416283
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FJDS5416283-05
MSM5416283
144-Word
16-Bit
MSM5416283262
16RAM
16SAMCMOS
RAM256K
SAM512
5128ms
MSM5416283
FJDS5416283
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MSM54V16272
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM5416263
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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E2L0019-17-Y1
MSM5416263
144-Word
16-Bit
MSM5416263
144-word
16-bit
512-word
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WM1-DIN
Abstract: MSM54V1627360
Text: J2L0025-17-Y1 作成：1998年 1月 MSM54V16273 l 前回作成：1997年 9月 ¡ 電子デバイス MSM54V16273 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー
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J2L002517Y1
MSM54V16273
144Word
16Bit
MSM54V16273
MSM54V16273262
16RAM
16SAMCMOS
RAM256K
SAM512
WM1-DIN
MSM54V1627360
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LGA 1156 PIN OUT diagram
Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Text: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)
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DIP8-P-300-2
DIP14-P-300-2
DIP16-P-300-2
DIP18-P-300-2
MIL-M-38510
MIL-STD-883
LGA 1156 PIN OUT diagram
QSJ-44403
LGA 1150 Socket PIN diagram
LGA 1155 Socket PIN diagram
IC107-26035-20-G
LGA 1151 PIN diagram
REFLOW lga socket 1155
IC107-3204-G
TB 2929 H alternative
LGA 1155 pin diagram
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MSM54V16282
Abstract: No abstract text available
Text: FEDS54V16282-05 ¡ Semiconductor MSM54V16282 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
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FEDS54V16282-05
MSM54V16282
144-Word
16-Bit
MSM54V16282
144-word
16-bit
512-word
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MSM54V16273
Abstract: No abstract text available
Text: FEDS54V16273-05 ¡ Semiconductor MSM54V16273 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
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FEDS54V16273-05
MSM54V16273
144-Word
16-Bit
MSM54V16273
144-word
16-bit
512-word
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MSM54V16272
Abstract: No abstract text available
Text: FEDS54V16272-05 ¡ Semiconductor MSM54V16272 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
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FEDS54V16272-05
MSM54V16272
144-Word
16-Bit
MSM54V16272
144-word
16-bit
512-word
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MSM54V16273
Abstract: MSM54
Text: E2L0025-17-Y1 ¡ Semiconductor MSM54V16273 ¡ Semiconductor This version: Jan. 1998 MSM54V16273 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit
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E2L0025-17-Y1
MSM54V16273
144-Word
16-Bit
MSM54V16273
144-word
16-bit
512-word
MSM54
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MSM5416263
Abstract: 256x16* STATIC RAM weland SM5416
Text: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416263
144-Word
16-Bit
MSM5416263
512-word
256x16* STATIC RAM
weland
SM5416
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MAS 10 RCD
Abstract: MSM54V32128 1DQ23
Text: O K I Semiconductor_ M SM 54V 32126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V32126/8 is a new generation Graphic D RAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CM O S silicon gate
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MSM54V32126/8_
072-Word
32-Bit
MSM54V32126/8
MSM54V32128
MAS 10 RCD
1DQ23
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EZ23
Abstract: MSM5432128
Text: O K I Semiconductor MSM5432126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5432126/8 is a new generation Graphic DRAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI’s CMOS silicon gate
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MSM5432126/8_
072-Word
32-Bit
MSM5432126/8
MSM5432128
EZ23
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MSM5416283-60
Abstract: MSM5416283 SAM256
Text: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416283
144-Word
16-Bit
MSM5416283
512-word
SSOP60-P-700-0
MSM5416283-60
SAM256
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Untitled
Abstract: No abstract text available
Text: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and
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MSM5416273
MSM5416273
144-word
16-bit
512-words
16-bits
2424D
b7E4240
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Untitled
Abstract: No abstract text available
Text: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416283
144-Word
16-Bit
MSM5416283
16-bit
512-word
2424D
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