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    ST 9431 Search Results

    ST 9431 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    919-431B-C0H Amphenol Communications Solutions XCede HD2, 4-Pair, 8 Column, XCede HD2 Without Extra Ground, 90ohms, Daughtercard Module, Right Angle Receptacle Visit Amphenol Communications Solutions
    51939-431LF Amphenol Communications Solutions PwrBlade®, Power Connectors, 32S 10P Right Angle Header, Solder to Board Visit Amphenol Communications Solutions
    10139431-002LF Amphenol Communications Solutions HPCE STRADDLE MOUNT Receptacle 4LP28S Omitted 10S Visit Amphenol Communications Solutions
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    ST 9431 Price and Stock

    onsemi NLAST9431MTR2G

    IC SWITCH DPDT X 1 25OHM 16WQFN
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    DigiKey NLAST9431MTR2G Reel
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    Rochester Electronics NLAST9431MTR2G 59,520 1
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    Rochester Electronics LLC NLAST9431MTR2G

    IC SWITCH DPDT X 1 25OHM 16WQFN
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    DigiKey NLAST9431MTR2G Bulk 376
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    TE Connectivity 962943-1

    Automotive Connectors MICRO TIM BU-KONT Reel of 6000
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    Mouser Electronics 962943-1 72,000
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    962943-1 3,700
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    962943-1
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    Molex 19431-0017

    Automotive Connectors .300" LOOSE 8 AWG MALE SN
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    Mouser Electronics 19431-0017 8,635
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    Molex 19431-0015

    Automotive Connectors MX150L TERM 8G MALE Cut Strip of 100
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    Mouser Electronics 19431-0015 1,900
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    19431-0015 500
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    ST 9431 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C166S

    Abstract: PEC 302 StK 412 230 stk 430 130 C166 RL10 RL11 RL12 RL13 bc 541
    Text: Use r Ma nual, V 1.7, Ja nuary 2001 C166S V2 1 6 - B i t M ic r o c o n t r o l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2001-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany


    Original
    C166S D-81541 PEC 302 StK 412 230 stk 430 130 C166 RL10 RL11 RL12 RL13 bc 541 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94318C IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY ™ Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number


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    94318C IRHY57133CMSE JANSR2N7488T3 O-257AA) MIL-PRF-19500/705 5M-1994. O-257AA. PDF

    T0257AA

    Abstract: IRHY57133CMSE JANSR2N7488T3 T0-257AA ERS 965
    Text: PD - 94318C IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY ™ Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number


    Original
    94318C IRHY57133CMSE JANSR2N7488T3 O-257AA) MIL-PRF-19500/705 5M-1994. O-257AA. T0257AA IRHY57133CMSE JANSR2N7488T3 T0-257AA ERS 965 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94318B IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY ™ Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number


    Original
    94318B IRHY57133CMSE JANSR2N7488T3 O-257AA) MIL-PRF-19500/705 5M-1994. O-257AA. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-94313D IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHz High Operating Frequency Switching-loss Rating includes all "tail" losses


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    PD-94313D IRG4MC30F O-254AA. MIL-PRF-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection


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    VND830LSP PowerSO-10 VND830LSP PDF

    st 9431

    Abstract: ISO7637 VND830LSP VND830LSP13TR
    Text: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection


    Original
    VND830LSP PowerSO-10 VND830LSP st 9431 ISO7637 VND830LSP13TR PDF

    Untitled

    Abstract: No abstract text available
    Text: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection


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    VND830LSP PowerSO-10 VND830LSP PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94313 IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


    Original
    IRG4MC30F O-254AA. MIL-PRF-19500 PDF

    IRG4MC30F

    Abstract: No abstract text available
    Text: PD -94313C IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


    Original
    -94313C IRG4MC30F O-254AA. MIL-PRF-19500 IRG4MC30F PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94313C IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


    Original
    -94313C IRG4MC30F O-254AA. MIL-PRF-19500 PDF

    IRG4MC30F

    Abstract: No abstract text available
    Text: PD -94313B IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


    Original
    -94313B IRG4MC30F O-254AA. MIL-PRF-19500 IRG4MC30F PDF

    st 9431

    Abstract: No abstract text available
    Text: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V ) s ( ct 10 1. Per each channel. 1 CMOS compatible inputs • Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection


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    VND830LSP PowerSO-10 VND830LSP VND830 st 9431 PDF

    IRF7476

    Abstract: TH 2190 mosfet F7101 IRF7101 MS-012AA
    Text: PD - 94311 IRF7476 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance


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    IRF7476 EIA-481 IA-541. IRF7476 TH 2190 mosfet F7101 IRF7101 MS-012AA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94318 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57133CMSE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHY57133CMSE Radiation Level RDS(on) 100K Rads (Si) 0.09Ω ID 18A* T0-257AA International Rectifier’s R5TM technology provides


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    O-257AA) IRHY57133CMSE T0-257AA MIL-STD-750, MlL-STD-750, O-257AA PDF

    str 5707

    Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification


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    MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703 PDF

    IRHY593230CM

    Abstract: IRHY597230CM T0-257AA
    Text: PD - 94319A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5TM technology provides


    Original
    4319A O-257AA) IRHY597230CM IRHY597230CM IRHY593230CM 5M-1994. O-257AA. T0-257AA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94319B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5 TM technology provides


    Original
    94319B O-257AA) IRHY597230CM IRHY597230CM IRHY593230CM 5M-1994. O-257AA. PDF

    IRHY593230CM

    Abstract: IRHY597230CM T0-257AA
    Text: PD - 94319B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5 TM technology provides


    Original
    94319B O-257AA) IRHY597230CM IRHY597230CM IRHY593230CM 5M-1994. O-257AA. T0-257AA PDF

    B5218

    Abstract: uc 1201a 14001-1
    Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. N orth C entral N o rth w e st N orth E a s t 20 M all R oad S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 F A X (6 1 7 )2 7 3 -9 3 6 3 901 W a rre n v ille R oad S uite 120 Lisle, IL 6 0 5 3 2 -13 5 9


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    251-B574 B5218 uc 1201a 14001-1 PDF

    jd 1803 b 107

    Abstract: jd 1803 IC jd 1803 19 B sung wei jd 1803 b jd 1803 b 106 94-4980 bay trail l samsung 943 ky 708
    Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest Northeast 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 119 Russell Street


    OCR Scan
    Clin-1205 jd 1803 b 107 jd 1803 IC jd 1803 19 B sung wei jd 1803 b jd 1803 b 106 94-4980 bay trail l samsung 943 ky 708 PDF

    CH-5430

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.SA North Central Northwest Northeast 1 19 R ussell Street Littleton, M A 0 1 4 6 0 TE L: 5 0 8 4 8 6 -0 7 0 0 FA X : (5 0 8 ) 4 8 6 -8 2 0 9 3 0 0 Park Boulevard Suite 2 1 0 Itasca, IL 6 0 1 4 3 -2 6 3 6 TEL: (7 0 8 ) 7 7 5 -1 0 5 0


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    124th 105th CH-5430 PDF

    240-22

    Abstract: 84107
    Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 Southwest South Central


    OCR Scan
    516J-273-5500 240-22 84107 PDF

    sung wei

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708)775-1058 3655 North First Street San José, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 South Central Southwest


    OCR Scan
    PDF