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    ST DIODE MARKING CODE TO3 Search Results

    ST DIODE MARKING CODE TO3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ST DIODE MARKING CODE TO3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STRH12P10GYG

    Abstract: No abstract text available
    Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened TO-257AA Applications


    Original     		PDF STRH12P10 O-257AA DocID022337 STRH12P10GYG

    Untitled

    Abstract: No abstract text available
    Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA


    Original     		PDF STRH12P10 O-257AA DocID022337

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original     		PDF STRH100N6 O-254AA STRH100N6HY1 DocID18353

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original     		PDF STRH100N6 O-254AA STRH100N6HY1 DocID18353

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH100N10 O-254AA SC30150 DocID17486

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p STRH40P10HY1any DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mΩ 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH100N10 O-254AA SC30150 DocID17486

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original     		PDF STRH8N10 STRH8N10S1 DocID018504

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original     		PDF STRH8N10 STRH8N10S1 DocID018504

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original     		PDF STRH8N10 STRH8N10S1 DocID018504

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original     		PDF STRH8N10 STRH8N10S1 STRH8N10SG DocID018504

    Untitled

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


    Original     		PDF STRH40N6 STRH40N6S1 STRH40N6SG

    RAD SMD MARKING CODE

    Abstract: smd diode marking code TO3
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


    Original     		PDF STRH40N6 STRH40N6S1 DocID18351 RAD SMD MARKING CODE smd diode marking code TO3

    Untitled

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


    Original     		PDF STRH40N6 STRH40N6S1

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    STGW60

    Abstract: gw60 STGWT60H65F 019012 AM-1185 stgw60h65
    Text: STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features • High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ 2 Lead free package


    Original     		PDF STGW60H65F STGWT60H65F O-247 STGW60 gw60 STGWT60H65F 019012 AM-1185 stgw60h65

    STGWT28IH120DF

    Abstract: ST IGBT code marking
    Text: STGW28IH120DF STGWT28IH120DF 1200 V, 25 A IH series trench gate field-stop IGBT Datasheet - preliminary data Features • Designed for soft commutation only  Maximum junction temperature: TJ = 175 °C  Minimized tail current 2 3 3 1 2 1 TO-247  Low saturation voltage: VCE sat = 2.0 V (typ.)


    Original     		PDF STGW28IH120DF STGWT28IH120DF O-247 DocID023490 STGWT28IH120DF ST IGBT code marking

    induction cooking circuits

    Abstract: No abstract text available
    Text: STGWT28IH120DF 25 A, 1200 V, trench gate field stop IGBT Datasheet − preliminary data Features • Very high speed switching ■ Tight parameters distribution ■ Tail-less switching off ■ Low forward drop free-wheeling diode ■ Low thermal resistance


    Original     		PDF STGWT28IH120DF induction cooking circuits

    GW60V60DF

    Abstract: No abstract text available
    Text: STGW60V60DF STGWT60V60DF 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Very high speed switching series • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 2 3 3 1 2 1 TO-247 • Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original     		PDF STGW60V60DF STGWT60V60DF O-247 DocID024154 GW60V60DF

    GW60V60DF

    Abstract: gwt60v60df gw60v60
    Text: STGW60V60DF, STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution


    Original     		PDF STGW60V60DF, STGWT60V60DF O-247 DocID024154 GW60V60DF gwt60v60df gw60v60

    GW60V60DF

    Abstract: gwt60v60df
    Text: STGW60V60DF STGWT60V60DF 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Very high speed switching series  Maximum junction temperature: TJ = 175 °C  Tail-less switching off 2 3 3 2 1 1 TO-247  Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original     		PDF STGW60V60DF STGWT60V60DF O-247 DocID024154 GW60V60DF gwt60v60df