H01012A0011
Abstract: LS-40MM 10-DIN H02030B0008 F05001A0002 modular patch panel
Text: Produkte für Lichtwellenleiter Fibre Optic Products 3. 19" L W L -R a n g ie rv e rte ile r 1 9 " FO Patch Panels 19"-Rangierverteiler für LWL eignen sich zur Aufteilung mehradriger LWL-Kabel auf Einzeladern, entw eder als Verteiler rahmen oder mit geschlossenem Gehäuse zur Aufnahm e von Spleißkassetten. Sie können in alle genormten 19"-Verteilerschränke eingebaut und durch die M odulbauweise genau au f die jew eiligen Anforderungen abgestimmt werden.
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E2000
D-71144
H01012A0011
LS-40MM
10-DIN
H02030B0008
F05001A0002
modular patch panel
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PDF
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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PDF
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ST Marking T03
Abstract: No abstract text available
Text: JOHANSON l i WSSSmarJ ’ www.johansondielectrics.com H ig h T e m p e r a t u r e S t a c k e d C a p a c it o r s K ey F e a tu r e s • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 50V to 200V Rugged Stack with Hi-Temp Lead-Attachment
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SIEMENS VF 100
Abstract: GS7070
Text: Silicon Switching Diode 32E D • BAL99 fl23fc.32G 0GlbM7b b ISIP SIEMENS/ SPCLi SEMI COND S • For high-speed switching Typo Marking Ordering co de for versions In bulk Ordering co d e or version s on 8 mm-tape P acka g e BAL99 JF Q62702-A611 Q62702-A687
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BAL99
fl23fc
Q62702-A611
Q62702-A687
23b320
G01bM7û
T-03-09
fl23fei32Q
SIEMENS VF 100
GS7070
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PDF
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transistor Marking code t03
Abstract: PDTA114EU PDTC114EU
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA114EU PNP resistor-equipped transistor Product specification Supersedes data of 1997 Oct 03 File under Discrete Semiconductors, SC04 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor
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M3D102
PDTA114EU
MAM135
SCA55
115104/1200/05/pp8
transistor Marking code t03
PDTA114EU
PDTC114EU
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PDF
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Diode T3D 46
Abstract: Diode T3D 55 T3D 55 diode t3d diode C02E10 W125D GRP15
Text: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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C02E10
Y1000
Diode T3D 46
Diode T3D 55
T3D 55 diode
t3d diode
W125D
GRP15
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Y330
Abstract: C02E10 t3d 68 t3d diode Diode T3D 55 T3D 55 diode T3D 68 diode GRM15X5C1H220JDB4 CU-01 GRM15X5C1H390JDB4
Text: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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Original
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C02E10
Y1000
Y330
t3d 68
t3d diode
Diode T3D 55
T3D 55 diode
T3D 68 diode
GRM15X5C1H220JDB4
CU-01
GRM15X5C1H390JDB4
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PDF
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Q041
Abstract: fast diode byw 98 200 BYW 200 2950a
Text: m SbE J> 7^2^23? a G M l 1^ r z 7 S C S -T H O M S O N s 6 S THOr,SON 7# ^ 10b • S G T H T-03-17 B Y W 2 9 - 5 0 A -> 2 0 0 A HIGH E FFIC IEN C Y FAST R E C O VE R Y R ECTIFIER D IO DES ■ VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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Comp27-1296
triacs bt 804 600v
UR720
1N4465
AO110
diode 1N539
2N3750
Unitrode discrete databook
2N6138
CM104
unitrode 679 BRIDGE rectifier
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PDF
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GRM55DR61H106KA01
Abstract: GRM55ER72A475KA01 GRM55ER71H475KA01 GRM43r GRM43RR GRM55RR71H105KA01 T3D 78 diode C02E10 GRM329 GRM43N
Text: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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Original
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C02E10
Y1000
GRM55DR61H106KA01
GRM55ER72A475KA01
GRM55ER71H475KA01
GRM43r
GRM43RR
GRM55RR71H105KA01
T3D 78 diode
GRM329
GRM43N
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PDF
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ST DIODE T03
Abstract: STTA112U
Text: STTA112U TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 1A V rrm 1200V tir Vf (typ) 65ns (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION
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STTA112U
ST DIODE T03
STTA112U
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grm32df51h106
Abstract: GRM43ER72A225KA01 GRM55ER72A475 GRM55RR GRM15X5C1H390JDB4
Text: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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Original
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C02E10
Y1000
grm32df51h106
GRM43ER72A225KA01
GRM55ER72A475
GRM55RR
GRM15X5C1H390JDB4
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PDF
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986 t04
Abstract: EXB-F9 exb-f10 ST Marking T03 EXB-F6 986 t02 t04 marking EXBF EXBF10 EXB-F
Text: Resistor Networks, Low Profile TYPE EXB-F Resistor Networks, Low Profile Type E X B - F Features Common Terminal e L o w P ro file .1 9 5 " 4 .9 5 m m max. seated height e H ig h ly stable th ick film . E quivalent to M IL-R -83401
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Til 322A
Abstract: FFD11 280/Til 322A
Text: S A R A Chipset Technical Manual Segmentation SARA Hardware Description Chapter 3. Hardware Description 3.1 Segmentation SARA Hardware Description 3.1.1 Segmentation SARA Internal Block Description Figure 3-1 shows a block diagram of the Segmentation S A R A chip.
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3-27B.
3-28B.
Til 322A
FFD11
280/Til 322A
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PDF
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STTA112U
Abstract: ST marking T03 MARKING P1 TRANSISTOR ST DIODE T03
Text: STTA112U TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION ANDRECTIFICATION
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STTA112U
STTA112U
ST marking T03
MARKING P1 TRANSISTOR
ST DIODE T03
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SB002-15SPA
Abstract: SB005-09CP SB005-09SPA SB01-15NP SB02-09CP SB02-09NP SB02-15 SB05-09 SB10-09T S0T143
Text: SAfiYO Small-Signal High-Voltage Schottky Barri er Diodes 2 S i n g l e T y p e S{: Mounted on ceramic board (250mm' X 0.8mm) ☆: Mounted on Cu foil (16mm‘X 0.2mmt) on glass epoxy board 0:Refer to the individual catalogue of each product because the center part of PCP outline is completely
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250mm'
T0-126
SB005-09CP
SB02-09CP
SB10-09PCSJ
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
SB002-15SPA
SB005-09SPA
SB01-15NP
SB02-09NP
SB02-15
SB05-09
SB10-09T
S0T143
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PDF
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SPD221P
Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Text: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).
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SGD102,
SGD102T)
Ratings-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
SPD221P
SPD221R
sanyo transistor
SGD102
SGD102T
SPD121
MCP6 Marking sanyo
SPD121P
SPD122P
SPD221
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SMD MARKING CODE w02
Abstract: T3D DIODE T3D 43 diode T3D 46 diode murata 55D ceramic filter T3D 34 diode SMD Transistor W03 gold metal detectors transistor SMD making code GC GJM1555C1H100JB01
Text: !Note Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specificaions before ordering.
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C02E-10
C02E10
SMD MARKING CODE w02
T3D DIODE
T3D 43 diode
T3D 46 diode
murata 55D ceramic filter
T3D 34 diode
SMD Transistor W03
gold metal detectors
transistor SMD making code GC
GJM1555C1H100JB01
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PDF
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ST62T00C
Abstract: KB MARKING PSO16 SSOP16 ST6200L ST6201L ST6203L T01C
Text: ST6200L/01L/03L LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER, TWO TIMERS & SAFE RESET • ■ ■ ■ ■ ■ ■ Memories – 1K or 2K bytes Program memory with readout protection – 64 bytes RAM Clock, Reset and Supply Management – Enhanced reset system
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ST6200L/01L/03L
ST62T00C
KB MARKING
PSO16
SSOP16
ST6200L
ST6201L
ST6203L
T01C
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PDF
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PSO16
Abstract: st62t00c VR02001 ST6200LM1
Text: ST6200L/01L/03L LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER, TWO TIMERS & SAFE RESET • ■ ■ ■ ■ ■ ■ ■ Memories – 1K or 2K bytes Program memory with readout protection – 64 bytes RAM Clock, Reset and Supply Management – Enhanced reset system
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ST6200L/01L/03L
PSO16
st62t00c
VR02001
ST6200LM1
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PDF
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1000 v fast recovery rectifier diodes
Abstract: M057 BYD34D BYD34G BYD34J BYD34K BYD34M Philips FA 564
Text: 5bE D m 711002b □DM0575 T22 H P H I N Maintenance type - not for new designs pnmps Avalanche fast soft-recovery rectifier diodes PHILIPS INTERNATIONAL DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID
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M0575
BYD34
1000 v fast recovery rectifier diodes
M057
BYD34D
BYD34G
BYD34J
BYD34K
BYD34M
Philips FA 564
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PDF
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3433B
Abstract: No abstract text available
Text: ¿ I ^ ^ I B ^ I 0 ^ S T A T 6 M E N ^ A _ Approved for pu blic release; distribution is unlimited. DESC FORM 193 MAY 86 4-18 D E S C Standardized Military Drawings AM D 1. SCOPE 1.1 Scope. T his drawing describes the requirements fo r cla ss B m ic ro c irc u its In accordance with
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HIT-STD-883,
MIl-STD-883
MIL-M-38510
27S31
3433B
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PDF
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svc253
Abstract: MARKING 1ED 5176 to-220 PCP MOSFET MCP6 Marking sanyo
Text: VARIABLE-CAPACITANCE DIODES IOCAP SA0YO Low-volt age and high-voltage variable capacitance diodes are available for both of AM electronic tuning use and FM electronic tuning use. gg F e a t u r e s ♦ High capacitance ratio ♦ Good linearity ♦ Small-sized package
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SVC321SPA
SVC323
SVC325
SVC34KVA)
SVC342
SVC343
SVC344
SVC345
SVC346
SVC347CVI)
svc253
MARKING 1ED
5176 to-220
PCP MOSFET
MCP6 Marking sanyo
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PDF
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concord ca 2100
Abstract: fagor 2201 HS01U 104 csk 3554M TFT250-18 FAGOR f 948 Concord Electronics MS04/CAGE
Text: HEATSINKS, MATING SOCKETS, WASHERS, VENDORS ACCESSORIES INFORMATION M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM RECOMMENDATIONS FOR THERMALLY CONDUCTIVE WASHERS Apex thermal washers are also available from Power Devices. “Thermstrate” is the material trade name for these
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546-APEX
HS01U
concord ca 2100
fagor 2201
104 csk
3554M
TFT250-18
FAGOR f 948
Concord Electronics
MS04/CAGE
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