ST MICROELECTRONICS BIPOLAR TRANSISTOR Search Results

ST MICROELECTRONICS BIPOLAR TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

ST MICROELECTRONICS BIPOLAR TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sc3052ef Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor	PDF
L4960 NOTE Abstract: transistor L7805 ic l7805 l7805 linear 2X1N4001 L4960 L6217 l7805 L4940 L4941 Text: APPLICATION NOTE VERY LOW DROP REGULATORS ENHANCE SUPPLY PERFORMANCE By Paolo ANTONIAZZI an d Arturo W OL FSGRUBER Standard three-terminal voltage regulator ICs use an NPN transistor as the series pass element,so the input-output voltage drop is 1.5V-2V. Low dropout	Original		PDF
XM0830SJ Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563	PDF
st microelectronics smd zener Abstract: OPA71 STKM2000 industrial rpm sensor capacitive circuit schematic st microelectronics smd diode DEVICE SILICON TWIN TRANSISTOR zener diode from st microelectronics Schottky diode Die flip chip schottky transistor spice Text: STKM2000 SERIES  2 µ/2 POLY/2 METAL BiCMOS MIXED ANALOG-DIGITAL STANDARD CELLS • ■ ■ ■ ■ ■ ■ ■ ADVANCED BICMOS 2 µ/2 POLY/ 2 METAL PROCESS TWIN TUB PROCESS HIGH LATCH-UP IMMUNITY POWER SUPPLY : MAXIMUM RATING : -0.5V TO 12V OPERATING CONDITIONS : 3V TO 10V	Original	STKM2000 st microelectronics smd zener OPA71 industrial rpm sensor capacitive circuit schematic st microelectronics smd diode DEVICE SILICON TWIN TRANSISTOR zener diode from st microelectronics Schottky diode Die flip chip schottky transistor spice	PDF
transistor AE code PNP smd Abstract: OPA71 cmos opamp OPA41 5 STKM2000 smd transistor code SG Text: STKM2000 SERIES 2 µ/2 POLY/2 METAL BiCMOS MIXED ANALOG-DIGITAL STANDARD CELLS • ■ ■ ■ ■ ■ ■ ■ ADVANCED BICMOS 2 µ/2 POLY/ 2 METAL PROCESS TWIN TUB PROCESS HIGH LATCH-UP IMMUNITY POWER SUPPLY : MAXIMUM RATING : -0.5V TO 12V OPERATING CONDITIONS : 3V TO 10V	Original	STKM2000 transistor AE code PNP smd OPA71 cmos opamp OPA41 5 smd transistor code SG	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON 5 •y Ï . A M 8 1 7 1 9 -0 4 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A ■ ■ » ■ ■ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	OCR Scan	AM81719-040	PDF
.00p Abstract: No abstract text available Text: r z j SGS-THOMSON SD1894 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . • . ■ . CLASS C 1.6 GHz COMMON BASE REFRACTORY/GOLD METALLIZATION EFFICIENCY = 50% MIN. ■ P o u t = 4.5 W MIN. WITH 1 0 dB GAIN PIN CONNIECTION 1 DESCRIPTION	OCR Scan	SD1894 SD1894 .00p	PDF
747s Abstract: ic 7475 AM1416-200 Text: SG S-T H O M SO N Æj7 SfflDg[B ô lllLÊCT[B 8!10(gi A M 14 1 6 -2 0 0 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY	OCR Scan	AM1416-200 AM1416-200 747s ic 7475	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587	PDF
ad 303 transistor Abstract: No abstract text available Text: rz7 S G S -T H O M S O N R [LiOT iQ £I ^ 7# BUV298AV NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE	OCR Scan	BUV298AV SC04830 ad 303 transistor	PDF
BUV298V Abstract: No abstract text available Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:	Original	BUV298V BUV298V	PDF
BUT30V Abstract: BUT30 Text: BUT30V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:	Original	BUT30V BUT30V BUT30	PDF
BUT30 Abstract: No abstract text available Text: SGS-THOMSON BUT30V NPN TRANSISTOR POWER MODULE > HIGH CURRENT POWER BIPOLAR MODULE > VERY LOW Rih JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS • ISOLATED CASE 2500V RMS . EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE 4 INDUSTRIAL APPLICATIONS:	OCR Scan	BUT30V SC04830 BUT30	PDF
EIA-625 Abstract: ecl 10K signetics LUCENT InGaAs 1345FMPC GR-253-CORE TR-NWT-000468 pin optical fiber lucent DS99-073LWP Text: Data Sheet January 2000 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks ■ High-speed data communications Description	Original	1345-Type 20-pin, 20-pin GR-253-CORE) DS00-099OPTO DS99-071LWP) EIA-625 ecl 10K signetics LUCENT InGaAs 1345FMPC GR-253-CORE TR-NWT-000468 pin optical fiber lucent DS99-073LWP	PDF

BUT23 Abstract: No abstract text available Text: S G S - T H O M K l O K L i O S O N M K I B U T 2 3 2 V NPN TRANSISTOR POWER MODULE > HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE • SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE	OCR Scan		PDF
igbt dimmer Abstract: IGBT light DIMMER "reverse phase control" igbt dimmer reverse phase control igbt dimmer DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs light dimmer igbt STGP10N50 AN486 topologies pulse transformer driver IGBT APPLICATION LC filter dimmer Triac Text: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles	Original		PDF
st microelectronics ignition Abstract: ST901T ignition coil npn power darlington Text: ST901T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON • ■ ■ ■ HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE HIGH DC CURRENT GAIN APPLICATION ■ HIGH RUGGEDNESS ELECTRONIC IGNITION FOR SMALL ENGINES	Original	ST901T ST901T O-220 O-220 st microelectronics ignition ignition coil npn power darlington	PDF
triac gate drive circuit Abstract: IGBT light DIMMER igbt dimmer IGBT/MOSFET Gate Drive driving mosfet/igbt with pulse transformer driver "reverse phase control" igbt dimmer TRIAC dimmer control an5183 reverse phase control igbt dimmer ZENER DIODE t2 Text: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles	Original		PDF
BUT11APX equivalent Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210	Original	BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice	PDF
BU4508DX equivalent Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210	Original	BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent	PDF
Toshiba thyristors Abstract: bosch motorola 002X5 Flash 1987 delco radio Delco Text: SGS-THOMSON Microelectronics  pre98whi - 1 - March 17 MISSION To offer strategic independence to our partners worldwide, as a profitable and viable broad range semiconductor supplier.  pre98whi - 2 - March 17 SGS-THOMSON : A GLOBAL SEMICONDUCTOR COMPANY	Original	pre98whi Toshiba thyristors bosch motorola 002X5 Flash 1987 delco radio Delco	PDF
IBM ASIC Products Abstract: nokia 2110 Dataquest Text: SGS-THOMSON Microelectronics  pre98whi - 1 - March 17 MISSION To offer strategic independence to our partners worldwide, as a profitable and viable broad range semiconductor supplier. pre98whi - 2 - March 17  SGS-THOMSON : A GLOBAL SEMICONDUCTOR COMPANY	Original	pre98whi IBM ASIC Products nokia 2110 Dataquest	PDF
BGT24MTR11 Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586	PDF
ESM4045DV Abstract: 0322AG Text: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE	Original	ESM4045DV ESM4045DV 0322AG	PDF

ST MICROELECTRONICS BIPOLAR TRANSISTOR Search Results

ST MICROELECTRONICS BIPOLAR TRANSISTOR Result Highlights (5)

ST MICROELECTRONICS BIPOLAR TRANSISTOR Datasheets Context Search

2sc3052ef

L4960 NOTE

XM0830SJ

st microelectronics smd zener

transistor AE code PNP smd

Untitled

.00p

747s

BC548 TRANSISTOR REPLACEMENT

ad 303 transistor

BUV298V

BUT30V

BUT30

EIA-625

BUT23

igbt dimmer

st microelectronics ignition

triac gate drive circuit

BUT11APX equivalent

BU4508DX equivalent

Toshiba thyristors

IBM ASIC Products

BGT24MTR11

ESM4045DV