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    ST MICROELECTRONICS TRANSISTORS Search Results

    ST MICROELECTRONICS TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ST MICROELECTRONICS TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    ZT2222A

    Abstract: T2222 ST Microelectronics Transistors ZT2222 T2222A STZT2222 STZT2222A STZT2907 STZT2907A
    Text: STZT2222 STZT2222A MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER


    Original     		PDF STZT2222 STZT2222A STZT2907 STZT2907A OT-223 T2222 T2222A ZT2222A T2222 ST Microelectronics Transistors ZT2222 T2222A STZT2222 STZT2222A

    ZT2907A

    Abstract: T2907A st 2222A ZT2907 T2907 STZT2222 STZT2222A STZT2907 STZT2907A ST Microelectronics Transistors
    Text: STZT2907 STZT2907A MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER


    Original     		PDF STZT2907 STZT2907A STZT2222 STZT2222A OT-223 T2907 T2907A ZT2907A T2907A st 2222A ZT2907 T2907 STZT2907 STZT2907A ST Microelectronics Transistors

    T5400

    Abstract: No abstract text available
    Text: STZT5400 STZT5401 MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER


    Original     		PDF STZT5400 STZT5401 STZT5550 STZT5551 OT-223 T5400

    ZT5550

    Abstract: ZT5551 st 5551
    Text: STZT5550 STZT5551 MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER


    Original     		PDF STZT5550 STZT5551 STZT5400 STZT5401 OT-223 T5550 15erwise ZT5550 ZT5551 st 5551

    H5NA90FI

    Abstract: W5NA90 H5NA90F h5na90 W5NA STW5NA90 STH5NA90FI
    Text: STW5NA90 STH5NA90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE ST W5NA90 ST H5NA90F I • ■ ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V < 2.5 Ω < 2.5 Ω 5.3 A 3.5 A TYPICAL RDS(on) = 2.1 Ω ± 30 V GATE-TO-SOURCE VOLTAGE


    Original     		PDF STW5NA90 STH5NA90FI W5NA90 H5NA90F 100oC O-247 ISOWATT218 5NA90 H5NA90FI W5NA90 h5na90 W5NA STW5NA90 STH5NA90FI

    W7NA100

    Abstract: h7na100fi STH7NA100FI STW7NA100 W7NA o247
    Text: STW7NA100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID ST W7NA100 ST H7NA100FI 1000 V 1000 V < 1.7 Ω < 1.7 Ω 7 A 4.3 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    Original     		PDF STW7NA100 STH7NA100FI W7NA100 H7NA100FI 100oC O-247 ISOWATT218 STH7NA100 W7NA100 h7na100fi STH7NA100FI STW7NA100 W7NA o247

    H5NA100FI

    Abstract: h5na100 TRANSISTORS 132 GD W5NA100 ST C 236 DIODE H5NA100F STH5NA100FI STW5NA100 O-247 h5NA
    Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID ST W5NA100 ST H5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STW5NA100 STH5NA100FI W5NA100 H5NA100FI 100oC O-247 ISOWATT218 H5NA100FI h5na100 TRANSISTORS 132 GD W5NA100 ST C 236 DIODE H5NA100F STH5NA100FI STW5NA100 O-247 h5NA

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    H16NA40FI

    Abstract: STH16NA40FI W16NA40 h16na4 STW16NA40
    Text: STW16NA40 STH16NA40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID ST W16NA40 ST H16NA40FI 400 V 400V < 0.3 Ω < 0.3 Ω 16 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STW16NA40 STH16NA40FI W16NA40 H16NA40FI 100oC O-247 ISOWATT218 H16NA40FI STH16NA40FI W16NA40 h16na4 STW16NA40

    BU4508DX equivalent

    Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
    Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    W8NA80

    Abstract: H8NA80FI w8na H8NA80 MAX2838 DSAUTAZ001
    Text: STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE ST W8NA80 ST H8NA80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.50 Ω < 1.50 Ω 7.2 A 4.5 A TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STW8NA80 STH8NA80FI W8NA80 H8NA80FI 100oC H8NA80FI w8na H8NA80 MAX2838 DSAUTAZ001

    W9NA80

    Abstract: H9NA80FI h9na80 9NA80 STW9NA80-STH9NA80FI STH9NA80FI STW9NA80
    Text: STW9NA80 STH9NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS PRELIMINARY DATA V DSS R DS on ID ST W9NA80 TYPE 800 V < 1.0 Ω 9.1 A ST H9NA80FI 800 V < 1.0 Ω 5.9 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STW9NA80 STH9NA80FI W9NA80 H9NA80FI 100oC O-247 ISOWATT218 W9NA80 H9NA80FI h9na80 9NA80 STW9NA80-STH9NA80FI STH9NA80FI STW9NA80

    MJE3440

    Abstract: No abstract text available
    Text: MJE3440 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications.


    Original     		PDF MJE3440 MJE3440 OT-32 OT-32

    SOA06

    Abstract: SOA56 transistors marking HJ hj sot-23 1Gt transistor TRANSISTOR 1gt
    Text: SOA06 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SOA06 1GT SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION PNP COMPLEMENTS IS SOA56 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF SOA06 SOA56 OT-23 SOA06 SOA56 transistors marking HJ hj sot-23 1Gt transistor TRANSISTOR 1gt

    st microelectronics ld

    Abstract: RF Transistors 1030 MHz
    Text: w # S G S -TH O M S O N V#@ [MOTOlHLtlOMiDtgi_ SD1530-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 40 WATTS typ. IFF 1030 - 1090 MHz . 35 WATTS (min.) DME 1025 - 1150 MHz


    OCR Scan     		PDF SD1530-08 SD1530-08 st microelectronics ld RF Transistors 1030 MHz

    Untitled

    Abstract: No abstract text available
    Text: di S G S -T H O M S O N RflD B»ilL[lCTK KlölE STW7N A100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss RoS(on Id STW7NA100 STH7NA100FI 1000 V 1000 V < 1 .7 0 < 1.7 n 7A 4.3 A • . . ■ . ■ TYPICAL Ros(on) = 1.45 Q ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STW7NA100 STH7NA100FI

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON SD1423 $ 7 . H D « E lL E T M D IB i RF & MICROWAVE TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS • ■ ■ ■ ■ ■ ■ 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION P o u t = 15 W MIN. WITH 8.0 dB GAIN


    OCR Scan     		PDF SD1423 800-960MHZ SD1423 SD1424.

    Untitled

    Abstract: No abstract text available
    Text: rz 7 SGS-THOMSON *•7#. MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . • . ■ ■ . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P0UT = 450 W MIN. WITH 7.0 dB GAIN


    OCR Scan     		PDF MSC81450M MSC81450M

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 5 •y Ï . A M 8 1 7 1 9 -0 4 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A ■ ■ » ■ ■ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF AM81719-040

    .00p

    Abstract: No abstract text available
    Text: r z j SGS-THOMSON SD1894 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . • . ■ . CLASS C 1.6 GHz COMMON BASE REFRACTORY/GOLD METALLIZATION EFFICIENCY = 50% MIN. ■ P o u t = 4.5 W MIN. WITH 1 0 dB GAIN PIN CONNIECTION 1 DESCRIPTION


    OCR Scan     		PDF SD1894 SD1894 .00p

    Untitled

    Abstract: No abstract text available
    Text: *57 T YPE irfs IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss RDS on Id IRF840 IRF840FI 500 V 500 V < 0.85 £2 < 0.85 a 8 A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 ß < 0.85 ß 8 A 4.5 A • . ■ ■ 40 /fi 841/Fl SGS-THOMSON iLiOM)iQ(£I


    OCR Scan     		PDF 841/Fl IRF840 IRF840FI IRF841 IRF841FI

    747s

    Abstract: ic 7475 AM1416-200
    Text: SG S-T H O M SO N Æj7 SfflDg[B ô lllLÊCT[B 8!10(gi A M 14 1 6 -2 0 0 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY


    OCR Scan     		PDF AM1416-200 AM1416-200 747s ic 7475