KA8532
Abstract: st zo 109 ma FM IF detector 10.7Mhz 15Khz crystal filter Wideband FM demodulator 560P KB8825 PIN14 phase detector 10khz "Audio Filter"
Text: FILTERLESS WIDEBAND FM IF DETECTOR KA8532 A PP L I C A T I O N N OT E T O K A8 5 3 2 W id e b an d I F D et e c t o r 99.3.10 Prepared by Jang0443@sec.samsung.com law@samsung.co.kr C -M I X E D G RO U P F AE L SI D IV I S I O N 1 FILTERLESS WIDEBAND FM IF DETECTOR
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KA8532
Jang0443
Pin12/13
63MHz
10Khz
KA8532
st zo 109 ma
FM IF detector
10.7Mhz 15Khz crystal filter
Wideband FM demodulator
560P
KB8825
PIN14
phase detector 10khz
"Audio Filter"
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD V2462/V2464 Preliminary LINEAR INTEGRATED CIRCUIT FAM I LY OF LOW-POWER RAI L-T O-RAI L I N PU T /OU T PU T OPERAT I ON AL AM PLI FI ERS SOP-8 ̈ DESCRI PT I ON The UTC V2462/2464 are dual/quad low-power rail-to-rail input/output op amplifiers with low supply current 500uA/op and
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V2462/V2464
V2462/2464
500uA/op)
QW-R105-042
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tsop20
Abstract: MC2044CB16 MS-012 soic16 MC2044CS16 MC2044CWAFERSPBG MC2044CWPDIE QSOP16 SOIC16 MC2044CQ16 TSOP-20
Text: MC2044C Postamplifier/Quantizer for Applications from 200 to 622 Mbps Data Sheet 02044-DSH-001-B Information provided in this Data Sheet is subject to change without notice. Mindspeed Technologies , Proprietary and Confidential June 2003 MC2044C Postamplifier/Quantizer for Applications from 200 Mbps to 622 Mbps
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MC2044C
02044-DSH-001-B
tsop20
MC2044CB16
MS-012 soic16
MC2044CS16
MC2044CWAFERSPBG
MC2044CWPDIE
QSOP16
SOIC16
MC2044CQ16
TSOP-20
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power transistors table
Abstract: LBE2003S LBE2009S
Text: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S NPN microwave power transistors Product specification Supersedes data of 1997 Mar 03 1998 Feb 16 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S FEATURES
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LBE2003S;
LBE2009S
LBE2003S
LBE2009S
SCA57
125108/00/03/pp16
power transistors table
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LBE2003S
Abstract: LBE2009S LCE2009S SC15
Text: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification LBE2003S;
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LBE2003S;
LBE2009S;
LCE2009S
LBE2003S
LBE2009S
OT441A
LCE2009S
SC15
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IT8502E
Abstract: ITE IT8502E ITE 8502E IT8502 LKN 304 PN alc269 SLG8SP510T P2003EVG 8502E ITE8502E
Text: Preface Notebook Computer M810L/M811L Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
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M810L/M811L
M815L
TJG-533-S-
-3216QBC-
IT8502E
ITE IT8502E
ITE 8502E
IT8502
LKN 304 PN
alc269
SLG8SP510T
P2003EVG
8502E
ITE8502E
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Untitled
Abstract: No abstract text available
Text: Specification: TS-S04D087A July, 2004 SDG1203 Series OC-48 Optical Transceiver with Mux / Demux 16x155.52Mbps Features ! ! ! ! ! ! ! ! ! 2.488Gbps High Speed Optical I/F SONET / SDH Compliant 155.52Mbps LVPECL I/F Pigtailed Compact Package Single +3.3V Operation
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TS-S04D087A
SDG1203
OC-48
16x155
52Mbps)
488Gbps
52Mbps
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IP3 MARK
Abstract: aabl
Text: 19-1181; Rev 1; 7/9? J ¥ ìj ixiyü _ GeneraI Description The MAX2630/MAX2631/MAX2632/MAX2633 are lowvoltage, low-noise am plifiers for use from VHF to microwave frequencies. Operating from a single +2.7V to +5.5V supply, these devices have a fla t gain
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MAX2630/MAX2631/MAX2632/MAX2633
900MHz.
MAX2630/MAX2631
MAX2632/MAX2633
MAX263
MAX2631
X2630-M
X2633
IP3 MARK
aabl
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TRANSISTOR J 5804 NPN
Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.
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2SC4885
SC-70
TRANSISTOR J 5804 NPN
nec 2501 LD 229
transistor NEC D 986
NEC 2501 MF 216
nec 2501 LD 325
tfr 586
nec 2501 Le 629
CD 1691 CB
MC 151 transistor
567/triac ZO 410 MF
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Untitled
Abstract: No abstract text available
Text: 3 DRAWING MADE IN THIRD A N G LE PR O JECTIO N LOC D F 1 2 5031 D1ST FO R E V IS IO N S C opyright 19 by A M P Incorpo rated , Har r isb u r g , P a , A l l I n t e r n atio n a l R ights R eserved , A M P Incorporated products COVERED BY U. S , AND FOREIGN PATENTS ANd/ o R PATENTS PENDING.
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821885-2
Abstract: 30 posn 82188
Text: 6 7 DRAWING THIS MA D E IN THIRD D R A WI N G ANGLE 15 4 5 2 3 PROJECTION UNPUBLI5HED COPYRIGHT RELEASED 19 BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST L OC 19 00 GP RESERVED. REV I 5 I0N5 LTR Z O NE D E S C R I F T ION M 2 .5 4 [ . 100]
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02-0CT-00
2184/edmmod
821885-2
30 posn
82188
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HD100170
Abstract: HD100170F
Text: H D 100170 Universal Demultiplexer/Decoder Signals applied to auxiliary inputs Ha, H b and He determine whether the outputs are active high or The H D100170 Universal Demultiplexer/Decoder functions as either a dual Mode Control inp u t M . In the dual mode, each half has a pair of active low
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HD100170
HD100170
HD100170F
HD100170F
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OXF*9
Abstract: No abstract text available
Text: TLX* HEW LETT WSEm P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:
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AT-32011
AT-32033
AT-32011:
AT-32033:
OT-23
OT-143
AT-32033
OT-23,
OXF*9
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Untitled
Abstract: No abstract text available
Text: r e « HEW LETT mLUM P A C K A R D Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 F eatures Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:
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AT-32011
AT-32033
AT-32011:
AT-32033:
OT-23
OT-143
AT-32033
OT-23,
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AM26S11 equivalent
Abstract: AM2907 A0LA 1N916 AM26S10 26S12
Text: Am26S10/Am26S11 Am26S10/Am26S11 Quad Bus Transceivers DISTINCTIVE CHARACTERISTICS • • • • Input to bus is inverting on Am 26S10 Input to bus is non-inverting on Am 26S11 Quad high-speed open collector bus transceivers Driver outputs can sink 100mA at 0.6V maximum
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Am26S10/Am26S11
Am26S10
Am2905,
Am2906,
Am2907
Am26S11
100mA
AM26S11 equivalent
AM2907
A0LA
1N916
26S12
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6170X
Abstract: tda 2022 TDA audio amplifier circuits AB2B tda 1024 zo 107
Text: SIEMENS Satellite Sound IF with Expander TDA 6170X Features • Fast I2C Bus controlled max. 400 kHz • PLL controlled sound IF tuning with 10 kHz stepwidth • Second order high-pass mixer input • IF MUX for 10.7 MHz wide/narrow IF filters • Two identical high sensitive alignment free
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6170X
P-DSO-28-1
TDA6170X
Q67001-A5214
6170X
tda 2022
TDA audio amplifier circuits
AB2B
tda 1024
zo 107
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MRF586
Abstract: F587 033 motorola MRF587
Text: MOTOROLA SEMICONDUCTOR MRF586 MRF587 TECHNICAL DATA The RF Line N P N S ILIC O N H IG H FR E Q U E N C Y T R A N S IS T O R S . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers Ideal for use in CATV, MATV, and instrumen
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MRF586
MRF587
T1111
F587
033 motorola
MRF587
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Untitled
Abstract: No abstract text available
Text: H D 100170 Universal D em ultiplexer/D ecoder The H D 1 0 0 1 7 0 Universal D em ultiplexer/D eco der Signals applied to auxiliary inputs Ha, H b and He functions as either a dual Mode Control in p u t M . determ ine whether the outputs are active high or
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100170F
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Untitled
Abstract: No abstract text available
Text: ‘ ON o n %-n B /K & REV. Z616E0PS DCN DATE æ M ft & D E S C R I PTION NO. m $ m APPD. m ys CHK. DR. & u APPD. iMvaa ##fflH ±0 . 4 P.O. B. THROUGH HOLE L O C A T I ON ( R E F. ) (4 & ) (CONTACT NO. 1 4 OS, : 140, 1 8 0 ) (CONTACT 1 8 0 S NO. : 160,200)
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Z616E0PS
TX15-200P9
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS LIE W hat H EW LETT A "KM P A C K A R D B • 4 4 4 7 5 3 4 D 0 1 0 0 S 7 bSO MSA-0300 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features • • • • Chip Outline1 Cascadable 50 Q Gain Block
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MSA-0300
MSA-0300
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Untitled
Abstract: No abstract text available
Text: r 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - n 5 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST DF DO R E V IS IO N S LTR DESCRIPTION A R A IS E D CAVITYDENTI FI CATION N U M B E R R.100 +.003 T Y P [2,54 +0,08]
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MS18276-1
MS18277-1
31MAR2000
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ blE D CHPNTS That HEWLETT wL'K M PACKARD • 4 4 4 7 56 4 0 0 1 0 1 4 b 7£b MSA-1105 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 05 Plastic Package Features • High Dynamic Range Cascadable 50 £2 or 75 £2 Gain Block
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MSA-1105
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Untitled
Abstract: No abstract text available
Text: T D R A WI N G THIS MADE IN D R A WI N G THIRD IS ANGLE UNRUBLI S H E D , COPYRIGHT 6 B 2 3 4 PROJECTION RELEASED 19 BY AMP FOR LOC PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS D I ST REV I 5 I0N5 DF RESERVED. ZONE LTR D E S C R I P T I ON B -D -►
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usOI6412
/home/usOI6412/docmod
11-FEB-05
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Untitled
Abstract: No abstract text available
Text: AVANTEK INC 5GE D O a v a n tek îm n b h Q0Qtifci4â T MSA-0300 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers T - 'W - ß - O I A vantek C hip O utline1 Features • • • • NOT APPLICABLE Cascadable 50 Cl Gain Block
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MSA-0300
3t0-37l-8717cr310-37t-847S
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