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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: ST2309ES P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	PDF	ST2309ES ST2309ES OT-23 -60V/-3 160m-ohm -60V/-1 200ted)

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: ST2309ES P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Original

PDF

ST2309ES ST2309ES OT-23 -60V/-3 160m-ohm -60V/-1 200ted)