ST3407S23RG
Abstract: No abstract text available
Text: ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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ST3407S23RG
ST3407S23RG
OT-23-3L
-30V/-4
-30V/-3
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Untitled
Abstract: No abstract text available
Text: ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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ST3407SRG
ST3407SRG
OT-23
-30V/-4
-30V/-3
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st3407s23rg
Abstract: sot-23 MARKING CODE 21 p channel mosfet 100v
Text: ST3407 P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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Original
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ST3407
ST3407
OT-23-3L
-30V/-4
-30V/-3
st3407s23rg
sot-23 MARKING CODE 21
p channel mosfet 100v
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