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    ST93C06 Search Results

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    ST93C06 Price and Stock

    National Semiconductor Corporation ST93C06M6

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    Bristol Electronics ST93C06M6 2,590
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    SGS Thomson ST93C06B1

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    Bristol Electronics ST93C06B1 1,425
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    SGS Thomson ST93C06CB1

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    Bristol Electronics ST93C06CB1 154
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    STMicroelectronics ST93C06CB6

    EEPROM, 16X16, SERIAL, CMOS, PDIP8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ST93C06CB6 1,800
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    STMicroelectronics ST93C06B1

    EEPROM, 16X16, SERIAL, CMOS, PDIP8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ST93C06B1 130
    • 1 $2.075
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    • 100 $1.245
    • 1000 $1.1205
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    ST93C06 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ST93C06 STMicroelectronics 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C06B1 STMicroelectronics 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C06B1013TR STMicroelectronics 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C06B1013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF
    ST93C06B3 STMicroelectronics 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C06B3013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF
    ST93C06B3013TR STMicroelectronics 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C06B6 STMicroelectronics 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C06B6013TR STMicroelectronics 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C06B6013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF
    ST93C06C STMicroelectronics 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C06CB1 SGS-Thomson EEPROM Serial Original PDF
    ST93C06CB1013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF
    ST93C06CB1013TR STMicroelectronics 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C06CB3 SGS-Thomson EEPROM Serial Original PDF
    ST93C06CB3013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF
    ST93C06CB3013TR STMicroelectronics 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C06CB6 SGS-Thomson EEPROM Serial Original PDF
    ST93C06CB6013TR STMicroelectronics 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C06CB6013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF

    ST93C06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ST93C06C

    Abstract: M93C06 ST93C06
    Text: ST93C06 ST93C06C 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


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    ST93C06 ST93C06C ST93C06 ST93C06C M93C06 M93C06 PDF

    ST93C06

    Abstract: ST93C06C AI00816B
    Text: ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


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    ST93C06 ST93C06C ST93C06 ST93C06C ST93C06. AI00816B PDF

    331 S

    Abstract: ST93C46 ST93C06 ST93C06C
    Text: ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


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    ST93C06 ST93C06C ST93C06 ST93C06C ST93C06. 331 S ST93C46 PDF

    ST93C06

    Abstract: ST93C06C
    Text: ST93C06 ST93C06C SERIAL ACCESS MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


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    ST93C06 ST93C06C ST93C06 ST93C06C ST93C06. PDF

    AI00816B

    Abstract: No abstract text available
    Text: ST93C06 ST93C06C 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


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    ST93C06 ST93C06C ST93C06C M93C06 ST93C06. AI00816B PDF

    palce16v8 programming algorithm

    Abstract: PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming
    Text: Datum 18.11.1998 aus www.stagusa.com Orbit 48 Device Support List Version 25.0 Note ALL PLDs require Orbit 48 PLD Module Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K.


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    PALCE29M16H-XX PALCE29MA16H-XX PALLV22V10/Z PALCE16V8H/Q/Z-XX PALLV16V8/Z-XX PALLV16V8Z-XX PALCE16V8HD-XX PALCE16V8 palce16v8 programming algorithm PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming PDF

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


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    M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040 PDF

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


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    ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2 PDF

    TOP SIDE MARKING M27C512

    Abstract: No abstract text available
    Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


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    PDF

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 PDF

    M27C512 SGS-THOMSON

    Abstract: M2201 ST93C46
    Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


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    PDF

    BV-1 501

    Abstract: mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics
    Text: QRR9704 QUALITY & RELIABILITY REPORT January 1997 to December 1997- EPROM, FLASH Memory, EEPROM and NVRAM Products INTRODUCTION ST Microelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


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    QRR9704 BV-1 501 mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics PDF

    MK48T08

    Abstract: mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64
    Text: QRR9802 QUALITY & RELIABILITY REPORT July 1997 to June 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


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    QRR9802 MK48T08 mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64 PDF

    Untitled

    Abstract: No abstract text available
    Text: / r : SGS-THOM SON * 7 # , H 0M ILI« M 0(g§ ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 or 32 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS


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    ST93C06 ST93C06C 150mil ST93C06 ST93C06C ST93C06, 00A12L PDF

    Untitled

    Abstract: No abstract text available
    Text: ST93C06 ST93C06C SGS-THOMSON llDMJilLIlMWDÊi 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN CO • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION > DUAL ORGANIZATION: 1 6 x 1 6 or 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY


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    ST93C06 ST93C06C 150mil ST93C06 ST93C06Care M93C06 aST93C06C PDF

    Untitled

    Abstract: No abstract text available
    Text: / = T S C S-TH O M SO N ^ 7 # . H0»iLi «K!10 g§ ST93C06 -. ST93C06C SERIAL ACCESS MICROWIRE BUS 256 bit (16 x 16 or 32 x 8 EEPROM DESCRIPTION The ST93C06 and ST93C06C are 256 bit Electri­ cally Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance


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    ST93C06 ST93C06C ST93C06 ST93C06C ST93C06. PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-1H0MS0N |]»iQJ §»«S ST93C06 SERIAL ACCESS CMOS 256 bit (16 x 16 or 32 x 8 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ DUAL ORGANISATION: 16 x 16 or 32 x 8 ■ BYTE/WORD AND CHIP PROGRAMMING IN­ STRUCTIONS


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    ST93C06 ST93C06 013TR PDF

    ST93C06

    Abstract: ST93C06C
    Text: SCS-THOMSON M g[l»i(gTMô m t. ST93C06 ST93C06C • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 or 32 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE


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    ST93C06 ST93C06C ST93C06 ST93C06C 007S014 ST93C06, 7T21237 QQ7201S PDF

    Untitled

    Abstract: No abstract text available
    Text: /T T SGS-THOMSON ^7#. HDlg^OllLIgTOOIfSlDgi ST93C06 ST93C06C • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 1 6 x 1 6 or 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS > SELF-TIMED PROGRAMMING CYCLE with


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    ST93C06 ST93C06C ST93C06. PDF

    93c06c

    Abstract: 93c06 st
    Text: ST93C06 ST93C06C ¿ = 7 SGS-THOMSON R Æ D ^ @ [iiL i g cô3^ ( s iia ( g s SERIAL ACCESS CMOS 256 bit (16 x 16 or 32 x 8) EEPROM • MINIMUM 1 MILLION ERASE/WRITE CYCLES, with OVER 10 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 1 6 x 1 6 or 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY PRO­


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    ST93C06 ST93C06C ST93C06C 013TR ST93C08CB1 93c06c 93c06 st PDF

    ST93C06

    Abstract: No abstract text available
    Text: G ì, SGS-THOMSON ST93C06 m 256 BITS 16x16 or 32x8 SERIAL ACCESS CMOS EEPROM MEMORY P R ELIM IN A R Y DATA HIGHLY INCREASED RELIABILITY OF CMOS EEPROM TECHNOLOGY. OVER 1 MILLION ERASE/WRITE CYCLES. OVER 10 YEARS DATA RETENTION. 16 X 16 OR 32 X 8 MEMORY FORMAT USER


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    ST93C06 16x16 ST93C06 ST93C06B1 ST93C06B6 ST93C06B3 ST93C06M1 ST93C06M6 ST93C06M3 PDF

    ST93C06

    Abstract: ST93C06C
    Text: / ^ 7 S C S -TH O M S O N Ä 7#. ST93C06 ST93C06C [Mfl @^ I[LIgTlS(S R!lD(gS SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 o r 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY


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    ST93C06 ST93C06C 16x16 ST93C06C ST93C06. ST93C06, PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    64X16 led matrix

    Abstract: TDA8172A 12v 400W AUDIO AMPLIFIER TEA2037 tda2824s TDA8214A CQFP-100 12v 40w tda2040 amplifier circuit tda2030 CQFP100
    Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SG S-THOMSON DATABOOKS DB O RDER CODE a 4 BIT MCU FAMILY ET9400 DBET9400ST/1


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    ET9400 EF6801/04/05 CB12000 ISB12000 ISB9000 ISB18000 ST6326/27/28/ ST6356/57/58 ST6340/42/44/46 64X16 led matrix TDA8172A 12v 400W AUDIO AMPLIFIER TEA2037 tda2824s TDA8214A CQFP-100 12v 40w tda2040 amplifier circuit tda2030 CQFP100 PDF