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    STMicroelectronics ST93CS46M6013

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    Bristol Electronics ST93CS46M6013 8,960
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    SGS Thomson ST93CS46B1

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    Bristol Electronics ST93CS46B1 450
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    Bristol Electronics ST93CS47M1 45
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    SGS Thomson ST93CS46M1

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    Bristol Electronics ST93CS46M1 10
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    STMicroelectronics ST93CS66ML1

    IC,SERIAL EEPROM,256X16,CMOS,SOP,14PIN,PLASTIC
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    Quest Components ST93CS66ML1 72
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    ST93CS Datasheets (100)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    ST93CS46 STMicroelectronics 1K (64 x 16) SERIAL MICROWIRE EEPROM Original PDF
    ST93CS46B1 STMicroelectronics 1Kbit (64x16) MULTIPLEXED BUS REGISTERED EEPROM Original PDF
    ST93CS46B1013TR STMicroelectronics 1K 64 x 16 SERIAL MICROWIRE EEPROM Original PDF
    ST93CS46B3 STMicroelectronics 1Kbit (64x16) MULTIPLEXED BUS REGISTERED EEPROM Original PDF
    ST93CS46B3013TR STMicroelectronics 1K 64 x 16 SERIAL MICROWIRE EEPROM Original PDF
    ST93CS46B6 STMicroelectronics 1Kbit (64x16) MULTIPLEXED BUS REGISTERED EEPROM Original PDF
    ST93CS46B6013TR STMicroelectronics 1K 64 x 16 SERIAL MICROWIRE EEPROM Original PDF
    ST93CS46M1 STMicroelectronics 1Kbit (64x16) MULTIPLEXED BUS REGISTERED EEPROM Original PDF
    ST93CS46M1013TR STMicroelectronics 1K 64 x 16 SERIAL MICROWIRE EEPROM Original PDF
    ST93CS46M3 STMicroelectronics 1Kbit (64x16) MULTIPLEXED BUS REGISTERED EEPROM Original PDF
    ST93CS46M3013TR STMicroelectronics 1K 64 x 16 SERIAL MICROWIRE EEPROM Original PDF
    ST93CS46M6 STMicroelectronics 1Kbit (64x16) MULTIPLEXED BUS REGISTERED EEPROM Original PDF
    ST93CS46M6013TR STMicroelectronics 1K 64 x 16 SERIAL MICROWIRE EEPROM Original PDF
    ST93CS46ML1 STMicroelectronics 1Kbit (64x16) MULTIPLEXED BUS REGISTERED EEPROM Original PDF
    ST93CS46ML6 STMicroelectronics 1Kbit (64x16) MULTIPLEXED BUS REGISTERED EEPROM Original PDF
    ST93CS47 STMicroelectronics 1K (64 x 16) SERIAL MICROWIRE EEPROM Original PDF
    ST93CS47B1 STMicroelectronics 1Kbit (64x16) MULTIPLEXED BUS REGISTERED EEPROM Original PDF
    ST93CS47B1013TR STMicroelectronics 1K 64 x 16 SERIAL MICROWIRE EEPROM Original PDF
    ST93CS47B3 STMicroelectronics 1Kbit (64x16) MULTIPLEXED BUS REGISTERED EEPROM Original PDF
    ST93CS47B3013TR STMicroelectronics 1K 64 x 16 SERIAL MICROWIRE EEPROM Original PDF

    ST93CS Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Æ 7 ^ 7 # S G S -T H O M S O N ST93CS46 R iflD ® © I[ L I O T ® E O D © Ì SERIAL A C C E S S C M O S 1K bit (64 x 16 EEPR O M • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA


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    ST93CS46 ST93CS46 013TR PDF

    ST93CS66

    Abstract: ST93CS67 st93CS66M1 but options mqs
    Text: ST93CS66 ST93CS67 S G S -1 H 0 M S 0 N M [M ilLI gïï[i3©K3D(i§ SERIAL MICROWIRE BUS 4K (256 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING


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    ST93CS66 ST93CS67 ST93CS66 ST93CS67 ST93CS66, st93CS66M1 but options mqs PDF

    A10089

    Abstract: ST93CS56 ST93CS57
    Text: r= 7 ^ 7 # ST93CS56 ST93CS57 S G S -T H O M S O N • » M ilL Itg T ïïiS tM Q tg S SERIAL MICROWIRE BUS 2K 128 x 16 EEPROM - 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION • SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING


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    ST93CS56 ST93CS57 ST93CS56 150mil ST93CS57 ST93CS56, 71E1237 A10089 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST93CS56 ST93CS57 2K 128 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56


    Original
    ST93CS56 ST93CS57 ST93CS56 ST93CS57 M93S56 150mil PDF

    Untitled

    Abstract: No abstract text available
    Text: ST93CS46 ST93CS47 1K 64 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46


    Original
    ST93CS46 ST93CS47 ST93CS46 ST93CS47 M93S46 150mil PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON o m » iO T ô [ ï l S ST93CS46 SERIAL ACCESS CMOS 1K bit (64 x 16) EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION * SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA ■ PAGE WRITE MODE (4 WORDS)


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    ST93CS46 ST93CS46 013TR PDF

    Untitled

    Abstract: No abstract text available
    Text: /= T S G S -T H O M S O N ^ 7 # [* ^ S i ¥ K (Q M (g S ST93CS46 ST93CS47 SERIAL ACCESS CMOS 1K bit (64 x 16 EEPROM • MINIMUM 1 MILLION ERASE/WRITE CYCLES, with OVER 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAM­


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    ST93CS46 ST93CS47 ST93CS47 VA00892B ST93CS46, PDF

    ST93CS46

    Abstract: ST93CS47
    Text: ST93CS46 ST93CS47 SERIAL MICROWIRE BUS 1K 64 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46 – 2.5V to 5.5V for the ST93CS47


    Original
    ST93CS46 ST93CS47 150mil ST93CS46 ST93CS47 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST93CS46 ST93CS47 SGS-THOMSON IIIIMJì ILIìMWIIÈÌ 1K 64 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE


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    ST93CS46 ST93CS47 ST93CS47 150mil M93S46 PDF

    ST93CS56

    Abstract: ST93CS57
    Text: ST93CS56 ST93CS57 SERIAL MICROWIRE BUS 2K 128 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56 – 2.5V to 5.5V for the ST93CS57


    Original
    ST93CS56 ST93CS57 ST93CS56 ST93CS57 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST93CS66 ST93CS67 SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 4K 256 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING


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    ST93CS66 ST93CS67 150mil ST93CS66 ST93CS67 M93S66 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST93CS56 ST93CS57 SGS-THOMSON IIIIMJì ILIì M W IIÈ Ì 2K 128 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE


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    ST93CS56 ST93CS57 150mil ST93CS56 ST93CS57 M93S56 PDF

    Untitled

    Abstract: No abstract text available
    Text: r = 7 SGS-THOMSON *J M . HDWilLE üMlli!!lll gi ST93CS66 ST93CS67 SERIAL MICROWIRE BUS 4K (256 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING


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    ST93CS66 ST93CS67 ST93CS66 ST93CS67 PDF

    Untitled

    Abstract: No abstract text available
    Text: fZ J * 7 /* S G S -T H O M S O N 5 [UgMDSlDlgi ST93CS57 2.5V SERIAL ACCESS CMOS 2K bit 128 x 16 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 2.5V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA


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    ST93CS57 ST93CS57 013TR PDF

    sk 473

    Abstract: 473ha 473 5.5v
    Text: rZ T SGS-THOMSON ^ 7 # UÈTTMiOÈS ST93CS47 1 K BITS 64 x 16 SERIAL ACCESS CMOS EEPROM MEMORY . 2.5V - 5.5V SINGLE POWER SUPPLY IN ALL MODES • USER DEFINED SIZE OF A MEMORY SEC­ TION PROTECTED AGAINST WRITE. ■ WORD AND PAGE WRITE MODES. ■ HIGHLY INCREASED RELIABILITY OF CMOS


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    ST93CS47 sk 473 473ha 473 5.5v PDF

    ST93CS66

    Abstract: ST93CS67
    Text: ST93CS66 ST93CS67 SERIAL MICROWIRE BUS 4K 256 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS66 – 2.5V to 5.5V for the ST93CS67


    Original
    ST93CS66 ST93CS67 ST93CS66 ST93CS67 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿ = 7 ^ 7 # S C S -T H O M S O N ST93CS66 H D g ® IL i© ^ ® (Q iD (g Ì SERIAL ACCESS CMOS 4K bit (256 x 16) EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA


    OCR Scan
    ST93CS66 PS014 ST93CS66 013TR PDF

    Untitled

    Abstract: No abstract text available
    Text: / = T SCS THOMSON ST93CS56 SERIAL ACCESS CMOS 2K bit 128 x 16 EEPROM MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION SINGLE 3V TO 5.5V SUPPLY VOLTAGE USER DEFINED WRITE PROTECT AREA PAGE WRITE MODE (4 WORDS) SELF-TIMED PROGRAMMING CYCLE WITH


    OCR Scan
    ST93CS56 ST93CS56 013TR PDF

    ST93CS66

    Abstract: ST93CS67
    Text: ¿ Z 7 S G S -T H O M S O N ^ 7 EfflD [f3 ô [ilLEl(gnj[S©[iiDD(g@ Mm ST93CS66 ST93CS67 SERIAL ACCESS MICROWIRE BUS 4K (256 x 16) EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING


    OCR Scan
    ST93CS66 ST93CS67 ST93CS66 ST93CS67are ST93CS66, 0072CH5 ST93CS67 PDF

    M93S56

    Abstract: ST93CS56 ST93CS57
    Text: ST93CS56 ST93CS57 2K 128 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56


    Original
    ST93CS56 ST93CS57 ST93CS56 ST93CS57 M93S56 150mil M93S56 PDF

    Untitled

    Abstract: No abstract text available
    Text: / T T SGS-THOMSON ^ 7 # . llD g ®llLI TO(s lfSlD(gi ST93CS66 ST93CS67 SERIAL M IC R O W IR E BUS 4K (256 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING


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    ST93CS66 ST93CS67 ST93CS67 PDF

    6AI0

    Abstract: No abstract text available
    Text: / T T SGS-THOMSON ^ 7 # . llD g ®llLI TO(s lfSlD(gi ST93CS46 ST93CS47 SERIAL M IC R O W IR E BUS 1K (64 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING


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    ST93CS46 ST93CS47 theST93CS46 150mil ST93CS47 6AI0 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS"THOMSON ST93CS66 ST93CS67 "*J m. IffltMilUIWMDIgS SERIAL ACCESS MICROWIRE BUS 4K 256 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING


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    ST93CS66 ST93CS67 ST93CS66 ST93CS67 ST93CS66, 0072CH5 PDF

    ST93CS46

    Abstract: ST93CS47 072D
    Text: C 7 ST93CS46 ST93CS47 S G S -T H O M S O N * •7 # . SERIAL ACCESS MICROWIRE BUS 1K 64 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING ■ SINGLE SUPPLY VOLTAGE


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    ST93CS46 ST93CS47 theST93CS46 ST93CS47are ST93CS46, Q0720b5 ST93CS47 072D PDF