Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1327 Stacked Chip 8M x16 Flash Memory and 1M (×16) SRAM (Model No.: LRS1327) Spec No.: MFM2-J11107A Issue Date: February 8, 1999 stacked chip, CSP, Flash, SRAM, LRS1327
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LRS1327
LRS1327)
MFM2-J11107A
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Stacked Chip Scale Package
Abstract: T166S2BWG 98000H-9FFFFH MITSUBISHI GATE ARRAY
Text: MITSUBISHI LSIs M6MGB/T166S2BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip
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M6MGB/T166S2BWG
216-BIT
16-BIT
152-BIT
072-WORD
16-BIT)
M6MGB/T166S2BWG
16M-bits
72-pin
Stacked Chip Scale Package
T166S2BWG
98000H-9FFFFH
MITSUBISHI GATE ARRAY
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M6MGB/T166S4BWG
Abstract: M6MGT166S4
Text: MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip
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M6MGB/T166S4BWG
216-BIT
16-BIT
304-BIT
144-WORD
16-BIT)
M6MGB/T166S4BWG
16M-bits
72-pin
M6MGT166S4
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M6MGB/T166S4BWG
Abstract: M6MGT166S4
Text: MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip
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M6MGB/T166S4BWG
216-BIT
16-BIT
304-BIT
144-WORD
16-BIT)
M6MGB/T166S4BWG
16M-bits
72-pin
M6MGT166S4
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B166-S2
Abstract: No abstract text available
Text: MITSUBISHI LSIs M6MGB/T166S2BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip
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M6MGB/T166S2BWG
216-BIT
16-BIT
152-BIT
072-WORD
16-BIT)
M6MGB/T166S2BWG
16M-bits
72-pin
B166-S2
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LRS1327
Abstract: LRS1344 64FBGA
Text: LRS1327/LRS1344 Data Sheet Stacked Chip 8M Flash Memory and 1M SRAM FEATURES • Flash Memory and SRAM PIN CONFIGURATION 64-BALL CSP • Stacked Die Chip Scale Package – LRS1327 bottom boot block – LRS1344 top boot block INDEX 1 2 3 4 5 6 7 8 NC A11 A15
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LRS1327/LRS1344
64-BALL
LRS1327
LRS1344
F-A16
F-A18
F-A17
SMA99086
64FBGA
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csp defects
Abstract: 13B1 IMT-2000 PCB design for very fine pitch csp package mitsubishi gaAs 1998 plasma display address electrode driving
Text: The Dawn of 3D Packaging as System-in-Package SIP Morihiro Kada Abstract The three-dimensional chip-stacked CSP, which started with a flash/SRAM combination memory for cellular phones, was the forerunner from which 3D system packages realize full-scale capability. In the future, 3D package technology will act as a savior in achieving greater shrink of
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NEC stacked MCP 1999
Abstract: Stacked CSP 1999 MCP Technology Trend 13B1 NEC stacked CSP memory NEC stacked CSP 2000 Hitachi Stacked CSP sharp calculator
Text: Packaging Trends for Mobile Application Morihiro Kada Abstract The advent of the CSP has heralded a new paradigm in semiconductor packaging technology. Previously overshadowed by IC chips, packaging technology has begun to take center stage as a key factor in product competitiveness. Packaging technology will develop into 3D packages, and will create a
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Intel Stacked CSP
Abstract: Stacked CSP 1999
Text: E PRELIMINARY Mechanical Specification for Intel Stacked-Chip Scale Package April 1999 Revision: 1.0 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in
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128-Mbit
32-Mbit
16-Mbit
72-Ball
Intel Stacked CSP
Stacked CSP 1999
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L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities
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L-11002-01
64MDRAM
64MSDRAM
128MSDRAM
256MSDRAM
144MRDRAM
L24002
NAND "read disturb" 1GB
Toshiba 512 NAND MLC FLASH BGA
PC133 registered reference design
CMOS 0.8mm process cross
Lithium battery CR2025 sony
M2V28S30AVP
M5M51008CFP
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CH-2074
Abstract: No abstract text available
Text: From Direct Chip Attach to Wafer Level CSP – A Modular Approach to Serve Customer Needs Jörg Jasper EM -Marin S.A. Rue des Sors 3, CH-2074 Marin, Switzerland Biography Jörg Jasper is working as R&D Manager for Chip Interconnection at EM-Marin SA, A Company of
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CH-2074
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sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM
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L-11002-01
L-11003-0I
sandisk micro sd card pin
MCP 1Gb nand 512mb dram 130
256K x 16 DRAM FPM cross reference
Toshiba NAND MLC FLASH BGA
TSOP 48 Package nand memory toshiba
MCP 1Gb 512Mb 130
PC133 registered reference design
L7103
02bjxx
ulsi
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rd33708
Abstract: BGA PACKAGE TOP MARK intel Intel H4 socket 28F3202C3 intel h2 socket 806801 Intel Stacked CSP 28F1602C3 JEDEC TRAY DIMENSIONS 28F3204C3
Text: Mechanical Specification and Shipping Media Information for Intel Stacked-Chip Scale Packages PRELIMINARY May 2000 Document Number: 298068-005 Information in this document is provided in connection with Inte® products. No license, express or implied, by estoppel or otherwise, to any intellectual
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28F1602C3
US048631
28F1604C3
28F3202C3
28F3204C3
US048681
rd33708
BGA PACKAGE TOP MARK intel
Intel H4 socket
28F3202C3
intel h2 socket
806801
Intel Stacked CSP
28F1602C3
JEDEC TRAY DIMENSIONS
28F3204C3
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CBG064-052A
Abstract: csp process flow diagram CBG064 reballing 28F160C18 BGA Solder Ball 0.35mm collapse intel 845 MOTHERBOARD pcb CIRCUIT diagram micron tsop 48 PIN tray 28F3202C3 intel MOTHERBOARD pcb design in
Text: D Intel Flash Memory Chip Scale Package User’s Guide The Complete Reference Guide 1999 D Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability
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AP-657
Abstract: Intel Stacked CSP 28F1602C3 28F3204C3 29066
Text: E PRODUCT PREVIEW 3 VOLT ADVANCED+ STACKED CHIP SCALE PACKAGE MEMORY 16-Mbit Flash + 2-Mbit SRAM - 28F1602C3 32-Mbit Flash + 4-Mbit SRAM - 28F3204C3 n n n n n Flash Memory Plus SRAM Reduces Board Design Complexity n Stacked Die, Chip Scale Package Smallest Possible Memory
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16-Mbit
28F1602C3
32-Mbit
28F3204C3
28F1602C3,
AP-657
Intel Stacked CSP
28F1602C3
28F3204C3
29066
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29066
Abstract: No abstract text available
Text: 3 Volt Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology
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28F1602C3,
28F1604C3,
28F3204C3,
28F3208C3
16-Mbit
32-Mbit
32-Mbit/8-Mbit
32-Mbit/4-Mbit,
29066
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28F1602C3
Abstract: 28F1604C3 28F3204C3 28F3208C3
Text: 3 Volt Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology
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28F1602C3,
28F1604C3,
28F3204C3,
28F3208C3
16-Mbit
32-Mbit
32-Mbit/4-Mbit,
16-Mbit/4-Mbit
28F1602C3
28F1604C3
28F3204C3
28F3208C3
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Intel Stacked CSP
Abstract: transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160
Text: 3 Volt Intel Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology
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28F1602C3,
28F1604C3,
28F3204C3,
28F3208C3
Intel Stacked CSP
transistor a018
28F1602C3
28F1604C3
28F3204C3
28F3208C3
29066
28f160
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IMC016FLSC
Abstract: 28F320C3 IMC008FLSC PLCC 44 intel package dimensions 28F800C3a 28f800b5 3 Volt Intel StrataFlash Memory 28F160S5 28F400B5 28F008B3
Text: Flash Memory Quick Reference Guide ion 9 Vers ’99 April Intel package and tools lineup Intel Package and Tools Lineup • Software Builder–Application software for Intel Flash memory products. • Online Utilities–Understand how Intel® Flash memory products will
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USA/0499/10K/MS
IMC016FLSC
28F320C3
IMC008FLSC
PLCC 44 intel package dimensions
28F800C3a
28f800b5
3 Volt Intel StrataFlash Memory
28F160S5
28F400B5
28F008B3
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29066
Abstract: 28f3204
Text: 3 Volt Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology
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28F1602C3,
28F1604C3,
28F3204C3
16-Mbit
32-Mbit
29066
28f3204
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PCB design for very fine pitch csp package
Abstract: 0.3mm pitch csp package oki pitch wcsp reliability 0.4mm pitch BGA 2asic oki packaging gps watch ceramic QFP Package 100 lead
Text: Oki’s ASIC Wafer Level Chip Size Packaging Technology Overview March 2004 1 ASIC W-CSP 02/04 The Market’s Requirement for New ASIC Packaging Technology • The need for increased functionality, smaller device size and lower costs are major challenges for today’s ASIC design engineers
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M6MGB/T166S4BWG
Abstract: Mitsubishi Stacked CSP M6MGT166S4
Text: MITSUBISHI LSIs M6MG B/T166S4B WG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip
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M6MGB/T166S4BWG
216-BIT
16-BIT
304-BIT
144-WORD
16-BIT)
M6MGB/T166S4BWG
16M-bits
72-pin
Mitsubishi Stacked CSP
M6MGT166S4
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DOLPF 06
Abstract: No abstract text available
Text: MITSUBISHI LSIs M6MG B/T166S2B WG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M 6M GB/T166S2BWG is a Stacked Chip
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OCR Scan
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PDF
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M6MGB/T166S2BWG
216-BIT
16-BIT
152-BIT
072-WORD
16-BIT)
M6MGB/T166S2BWG
16M-bits
72-pin
DOLPF 06
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Untitled
Abstract: No abstract text available
Text: PRODUCT PREVIEW 3 VOLT ADVANCED+ STACKED CHIP SCALE PACKAGE MEMORY 16-Mbit Flash + 2-M bit SRAM - 28F1602C3 32-M bit Flash + 4-M bit SRAM - 28F3204C3 • Flash Memory Plus SRAM — Reduces Board Design Complexity ■ Stacked Die, Chip Scale Package — Smallest Possible Memory
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16-Mbit
28F1602C3
28F3204C3
32-Mbit
28F1602C3,
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