Untitled
Abstract: No abstract text available
Text: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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SCA-11
19dBm
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Untitled
Abstract: No abstract text available
Text: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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SCA-11
SCA-11
19dBm
31mil
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Untitled
Abstract: No abstract text available
Text: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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100mW
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188-114 DB 25 pin out
Abstract: 120C AX RF amplifier IC
Text: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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100mW
20dBm
188-114 DB 25 pin out
120C
AX RF amplifier IC
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100C
Abstract: SCA-11
Text: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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SCA-11
SCA-11
19dBm
31mil
100C
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Untitled
Abstract: No abstract text available
Text: ßäf Stanford M icrodevices SCA-1 Product Description Stanford M icrodevices’ SCA-1 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. 0.3-3 GHz, Cascadable
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100mW
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Untitled
Abstract: No abstract text available
Text: 3 Stanford Microdevices Product Description SCA-11 Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET M MIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate M ESFET process. 0.3-3 GHz, Cascadable
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SCA-11
SCA-11
19dBm
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SCA-1 Stanford M icrodevices’ SCA-1 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate M ESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier
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100mW
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LM 344 IC
Abstract: LM 344 H pin for lm 339 ic cy 5103
Text: ¿3 Stanford Microdevices Product Description SCA-1 Stanford M icrodevices’ SCA-1 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This am plifier is internally m atched with typical VSW R of
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100mW
LM 344 IC
LM 344 H
pin for lm 339 ic
cy 5103
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Untitled
Abstract: No abstract text available
Text: EJ Stanford Microdevices Product Description SCA-11 Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This am plifier is internally m atched with typical VSW R of
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SCA-11
19dBm
SCA-11
0000C
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sna476tr1
Abstract: sna4 sna476
Text: Stanford Microdevices Product Description SNA-476 Stanford Microdevices' SNA-476 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V.
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SNA-476
SNA-400)
SNA-476
sna476tr1
sna4
sna476
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Untitled
Abstract: No abstract text available
Text: IO Stanford Microdevices Product Description SCA-14 Stanford M icrodevices’ SCA-14 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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SCA-14
SCA-14
100mA
36dBm.
100mW
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SMM-208 Stanford Microdevices' SM M -208 is a gallium arsenide monolithio-microwave-integrated circuit M M IC amplifier housed in a low cost, surface-mountable ceramic package. Designed for operation in w ireless system s
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SMM-208
28dBm
600mA
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Untitled
Abstract: No abstract text available
Text: 3 Stanford Microdevices Product Description SCA-5 Stanford M icrodevices’ SCA-5 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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29dBm.
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Untitled
Abstract: No abstract text available
Text: É0 Stanford Microdevices Product Description SNA-586 Stanford Microdevices’ SNA-586 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. This amplifier provides 19dB of gain when biased at 80mA and 5.0V.
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SNA-586
SNA-586
SNA-500)
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SMM-280-4 Stanford Microdevices' SMM-280-4 is a gallium arsenide monolithic-microwave-integrated circuit MMIC amplifier housed in a copper-tungsten package for efficient heat transfer. 1.5-2.7 GHz, 4 Watt GaAs MMIC Amplifier
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SMM-280-4
SMM-280-4
36dBm
46dBm
3000mA
3600mA
1000mW
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Untitled
Abstract: No abstract text available
Text: èSl Stanford Microdevices SCA-15 Product Description Stanford M icrodevices’ SCA-15 is a high perform ance Galliu Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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SCA-15
27dBm.
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SNA-387 Stanford Microdevices1 SNA-387 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost drop-in plastic package. This amplifier provides 21 dB of gain when biased at 35mA and 4V. DC-3 GHz, Cascadable
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SNA-387
SNA-300)
SNA-387
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Untitled
Abstract: No abstract text available
Text: § Stanford Microdevices Product Description SMM-280-2 Stanford Microdevices’ SM M -280-2 is a gallium arsenide monolithic-microwave-integrated circuit M M IC amplifier housed in a copper-tungsten package for efficient heat transfer. 1.5-2.7 GHz, 2 Watt
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SMM-280-2
33dBm
43dBm
1500mA
1800m
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Untitled
Abstract: No abstract text available
Text: ßäf Stanford M icrodevices Product Description SCA-16 Stanford M icrodevices’ SCA-16 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perform ance up to 3 GHz. The heterojunction increases
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SCA-16
28dBm.
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SNA-587
Abstract: ic 7710 SNA-587-TR1
Text: Stanford Microdevices Product Description SNA-587 Stanford Microdevices’ SNA-587 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost drop-in plastic package. This amplifier provides 19dB of gain when biased at 80mA and 5.0V, DC-3 GHz, Cascadable
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SNA-587
SNA-500)
SNA-587
18dBm
ic 7710
SNA-587-TR1
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SCA-6 Stanford M icrodevices’ SCA-6 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor mance up to 3 GHz. The heterojunction increases break
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30dBm.
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SNA-276
Abstract: No abstract text available
Text: gO Stanford Microdevices Product Description SNA-276 Stanford Microdevices’ SNA-276 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 16dB of gain when biased at 50mA and 4V.
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SNA-276
SNA-200)
SNA-276
CasA-276-TR1
SNA-276-TR2
SNA-276-TR3
-155C
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SNA-576
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SNA-576 Stanford Microdevices' SNA-576 is a GaAs monolithic broadband amplifier housed in a tow-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V, DC-3 GHz, Cascadable
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SNA-576
SNA-500)
SNA-576
Ampl36
-190C
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