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Text: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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Untitled
Abstract: No abstract text available
Text: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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SCA-11
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Untitled
Abstract: No abstract text available
Text: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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188-114 DB 25 pin out
Abstract: 120C AX RF amplifier IC
Text: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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100mW
20dBm
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120C
AX RF amplifier IC
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100C
Abstract: SCA-11
Text: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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31mil
100C
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Untitled
Abstract: No abstract text available
Text: 3 Stanford Microdevices Product Description SCA-11 Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET M MIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate M ESFET process. 0.3-3 GHz, Cascadable
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SCA-11
SCA-11
19dBm
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SCA-1 Stanford M icrodevices’ SCA-1 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate M ESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier
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100mW
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LM 344 IC
Abstract: LM 344 H pin for lm 339 ic cy 5103
Text: ¿3 Stanford Microdevices Product Description SCA-1 Stanford M icrodevices’ SCA-1 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This am plifier is internally m atched with typical VSW R of
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100mW
LM 344 IC
LM 344 H
pin for lm 339 ic
cy 5103
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Untitled
Abstract: No abstract text available
Text: EJ Stanford Microdevices Product Description SCA-11 Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This am plifier is internally m atched with typical VSW R of
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SCA-11
19dBm
SCA-11
0000C
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Untitled
Abstract: No abstract text available
Text: § Stanford Microdevices Product Description SMM-210 Stanford Microdevices’ SMM-210 is a high performance gallium arsenide monolithic-microwave-integrated circuit MMIC housed in a low cost, surface-mount ceramic package. Designed for operation in wireless systems
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SMM-210
SMM-210
30dBm
600mA)
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sna476tr1
Abstract: sna4 sna476
Text: Stanford Microdevices Product Description SNA-476 Stanford Microdevices' SNA-476 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V.
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SNA-476
SNA-400)
SNA-476
sna476tr1
sna4
sna476
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices S-Parameter Disk Now Available! This disk contains S-Parameter data for all Stanford Microdevices products. Included on the disk: □ Complete index describing part number, bias conditions, package styles. □ All S-Parameters for Stanfords product line.
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Untitled
Abstract: No abstract text available
Text: IO Stanford Microdevices Product Description SCA-14 Stanford M icrodevices’ SCA-14 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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SCA-14
SCA-14
100mA
36dBm.
100mW
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SLN-176 Stanford M icrodevices’ SLN-176 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is used for broadband perfor
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SLN-176
SLN-176
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Untitled
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Text: 3 Stanford Microdevices Product Description SCA-5 Stanford M icrodevices’ SCA-5 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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29dBm.
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Untitled
Abstract: No abstract text available
Text: i Stanford Microdevices Product Description SCA-16 Stanford M icrodevices’ SCA-16 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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SCA-16
28dBm.
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2800N
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SLN-176 Stanford M icrodevices’ SLN-176 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is used for broadband perfor
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SLN-176
2800N
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transistor 65 C 3549
Abstract: linear amplifier P1dB 36dBm
Text: Stanford Microdevices Product Description SNA-676 Stanford Microdevices' SNA-676 is a high-performance GaAs Heterojunction Bipolar Transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband performance to 6,5
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SNA-676
18dBm
SNA-600)
-676-TR1
-676-TR2
SNA-676-TR3
transistor 65 C 3549
linear amplifier P1dB 36dBm
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices Quality Assurance Methodology Stanford Microdevices is committed to providing products with exceptional reliabil ity and performance standards. Our quality program includes periodic qualification testing of all standard products including 2000 hour life test at +125c ambient
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C/100?
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Untitled
Abstract: No abstract text available
Text: É0 Stanford Microdevices Product Description SNA-586 Stanford Microdevices’ SNA-586 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. This amplifier provides 19dB of gain when biased at 80mA and 5.0V.
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SNA-586
SNA-586
SNA-500)
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Untitled
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Text: Stanford Microdevices Product Description SMM-280-4 Stanford Microdevices' SMM-280-4 is a gallium arsenide monolithic-microwave-integrated circuit MMIC amplifier housed in a copper-tungsten package for efficient heat transfer. 1.5-2.7 GHz, 4 Watt GaAs MMIC Amplifier
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SMM-280-4
SMM-280-4
36dBm
46dBm
3000mA
3600mA
1000mW
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Untitled
Abstract: No abstract text available
Text: i Stanford Microdevices Product Description SHF-0589 Stanford M icrodevices’ SHF-0589 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost surfacemount plastic package. HFET technology improves breakdown voltage for high drain voltage operation. Its
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SHF-0589
SHF-0589
33dBm
600mA.
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Untitled
Abstract: No abstract text available
Text: èSl Stanford Microdevices SCA-15 Product Description Stanford M icrodevices’ SCA-15 is a high perform ance Galliu Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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SCA-15
27dBm.
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SNA-387 Stanford Microdevices1 SNA-387 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost drop-in plastic package. This amplifier provides 21 dB of gain when biased at 35mA and 4V. DC-3 GHz, Cascadable
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SNA-387
SNA-300)
SNA-387
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