Untitled
Abstract: No abstract text available
Text: he -E1-02 Static Sensors and Ionizers Series Catalog "Visible" Static Electricity Measuring Static Electricity In-line Thorough Ionization Best Ion Balance in its Class f r o m t h e FA C T O RY Sensing "Visible" Static Electricity Direct Display of Static Charge
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-E1-02
ZJ-SD100/ZJ-SDA11
E374-E1-02
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MIL-PRF-81705
Abstract: MILPRF-81705 1101-B
Text: Sizes on Page 2 3M Static Shielding Bag SCC 1500 Static Shielding Bag ~ Metal-Out 3M Metal-out Static Shielding Bags SCC 1500 are approved by major computer, electronics, and disk drive manufacturers for use worldwide. Our transparent, metallized static shield bag structure provides a static safe environment for sensitive
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MIL-PRF-81705
MILHDBK-263,
MIL-STD-1686,
1012ohms/square
1101-b
C866-722-3736
MILPRF-81705
1101-B
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N E C D882
Abstract: MIL-STD-3010
Text: Sizes on Page 2 3MTM Metal-out Static Shielding Bag SCC 1500 ZipTop Reclosable Open Top Static Shielding Bag - Metal-out 3M SCC 1500 metal-out static shielding bags are approved by major electronics manufacturers for use worldwide. Our transparent, metallized static shield bag structure provides a static safe environment for sensitive electronic devices. This bag also provides
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1101-B
N E C D882
MIL-STD-3010
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carpet tile
Abstract: No abstract text available
Text: 3 Static-Dissipative Portable Field Service Kit 8501 Designed for electrostatic protection of static-sensitive components during field service calls Although static damage can occur anywhere microelectronic components are used, these sensitive devices are most susceptible during servicing. The 3M Static
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MIL-STD-3010
Abstract: 3002424 D257 S541 STM11 ESD-S541 1011ohms
Text: 3MTM Static Shielding Bag SCC 1000 Sizes on Page 2 Open Top ZipTop Static Shielding Bag ~ Metal-In This transparent, metallized static shield bag provides a static safe environment for sensitive electronic devices. Four layer construction. Polyester dielectric and metal layer provide
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Shielding630
MIL-STD-3010
3002424
D257
S541
STM11
ESD-S541
1011ohms
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NFPA 56A
Abstract: NFPA-56A ASTM-F-150
Text: 3 Maintenance of Static Control Systems 8200 Mats Technical Brief – July, 1983 The basic purpose of conductive work surfaces is to provide a surface that is free of static charge and also is capable of removing the static charge from conductive items placed on it. The total resistance to ground
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0-10DING,
NFPA 56A
NFPA-56A
ASTM-F-150
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NFPA 56A
Abstract: ASTM-F-150
Text: 3 Maintenance of Static Control Systems 8200 Mats Technical Brief – July, 1983 The basic purpose of conductive work surfaces is to provide a surface that is free of static charge and also is capable of removing the static charge from conductive items placed on it. The total resistance to ground
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0-10Y
NFPA 56A
ASTM-F-150
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Untitled
Abstract: No abstract text available
Text: Workstation Products Field Service Kits Sensitive microelectronic components can be damaged, even destroyed, by one ever-present enemy — static electricity. Electronic equipment is especially susceptible to static electricity during servicing. Static dissipative products manufactured by 3M are designed to provide
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MIL-D-3464
Abstract: D1876 MIL-D3464 MILD-3464 MIL-D-3464 type 2 D1876-93 MIL-D-3464 type 1 MIL-STD-3010 D-1876 FTMS-101C
Text: STATSHIELD STANDARD MOISTURE BARRIER BAG Specifications: Electrical Properties Typical Values Test Procedures/Method Surface Resistance both surfaces @ 12%RH ANSI/ESD STM11.11 <10E11ohms Static Shielding ANSI/ESD STM11.31 <10 nJ Static Shielding EIA 541
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STM11
10E11ohms
0889mm)
MIL-STD-3010,
D1876-93
02g/100sq
in/24hours
MIL-I-8835.
MIL-D-3464
D1876
MIL-D3464
MILD-3464
MIL-D-3464 type 2
D1876-93
MIL-D-3464 type 1
MIL-STD-3010
D-1876
FTMS-101C
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Untitled
Abstract: No abstract text available
Text: Smart Electrostatic Sensor ZJ-SD CSM_ZJ-SD_DS_E_2_1 Smart Static Electricity Sensing: Making Static Electricity Visible • Compact sensor head and smart digital amplifier measure the electrostatic charge quantity of workpieces at all times. • Multi-point measurements and data logging of the static
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ZJ-SD100
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CY7C1049CV33-8ZSXC
Abstract: No abstract text available
Text: CY7C1049CV33 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ Commercial: 0 °C to 70 °C The CY7C1049CV33 is a high performance Complementary metal oxide semiconductor (CMOS) Static RAM organized as
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CY7C1049CV33
CY7C1049CV33
CY7C1049CV33-8ZSXC
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Untitled
Abstract: No abstract text available
Text: Handling instructions •Handling precaution This product is sensitive to static electricity, and demands a lot of attention. Please take all possible measures for static electricity. The following are examples of measures to prevent ESD damages. a To ground human body in order to discharge static
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Untitled
Abstract: No abstract text available
Text: CY7C1046DV33 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1046CV33 The CY7C1046DV33 is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is
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CY7C1046DV33
CY7C1046DV33
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Untitled
Abstract: No abstract text available
Text: CY7C1041CV33 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C The CY7C1041CV33 is a high performance CMOS static RAM organized as 262,144 words by 16 bits.
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CY7C1041CV33
CY7C1041CV33
CY7C1041BV33
I/O15)
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CD82C85
Abstract: 80C86 80C88 82C85 CS82C85 ID82C85 IS82C85 74HCxx logic table
Text: 82C85 CMOS Static Clock Controller/Generator March 1997 Features Description • Generates the System Clock For CMOS or NMOS Microprocessors and Peripherals The Intersil 82C85 Static CMOS Clock Controller/Generator provides complete control of static CMOS system operating modes and supports full speed, slow, stop-clock and
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82C85
82C85
80C86
80C88
16-bit
82C8s
CD82C85
CS82C85
ID82C85
IS82C85
74HCxx logic table
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CY7C1061
Abstract: No abstract text available
Text: CY7C10612DV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C10612DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power
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CY7C10612DV33
16-Mbit
CY7C10612DV33
I/O15)
CY7C1061
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tda 9310
Abstract: CDP1800 CDP1821CD3
Text: CDP1821C/3 High-Reliability CMOS 1024-Word x 1-Bit Static RAM March 1997 Features Description • Static CMOS Silicon-On-Sapphire Circuitry CD4000Series Compatible The CDP1821C/3 is a 1024-word x 1-bit CMOS silicon-on-sapphire SOS , fully static, random-access memory designed for
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CDP1821C/3
1024-Word
CD4000Series
CDP1821C/3
CDP1800
CDP1800-Series
100ns
tda 9310
CDP1821CD3
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AN037
Abstract: simco touch sensitive saran ionizer HSMS-8101 HSMS-8202 simco electrostatic Desco Industries 3M Touch Systems
Text: DESIGN APPLICATION NOTE - AN037 An ESD Overview, and Suggested Handling Precautions What is static electricity, and why are we concerned about it? Static electricity is the charge that builds up on dissimilar materials when they are brought together then separated. We’ve all experienced static electricity
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AN037
EAN-102030
AN037
simco
touch sensitive saran
ionizer
HSMS-8101
HSMS-8202
simco electrostatic
Desco Industries
3M Touch Systems
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Untitled
Abstract: No abstract text available
Text: CY7C1011DV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description The CY7C1011DV33[1] is a high-performance CMOS Static RAM organized as 128 K words by 16 bits. • Pin-and function-compatible with CY7C1011CV33 ■
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CY7C1011DV33
CY7C1011DV33
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY7C1062DV33 16-Mbit 512 K x 32 Static RAM 16-Mbit (512 K × 32) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1062DV33 is a high performance CMOS Static RAM organized as 524,288 words by 32 bits. ■ Low active power
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CY7C1062DV33
16-Mbit
CY7C1062DV33
I/O15)
I/O16
I/O23
I/O24
I/O31,
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cy7c1019d-10
Abstract: No abstract text available
Text: CY7C1019D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description [1] • Pin- and function-compatible with CY7C1019B The CY7C1019D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion
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CY7C1019D
CY7C1019D
CY7C1019B
cy7c1019d-10
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Untitled
Abstract: No abstract text available
Text: CY7C1062DV33 16-Mbit 512 K x 32 Static RAM 16-Mbit (512 K × 32) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1062DV33 is a high performance CMOS Static RAM organized as 524,288 words by 32 bits. ■ Low active power
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CY7C1062DV33
16-Mbit
CY7C1062DV33
I/O15)
I/O16
I/O23
I/O24
I/O31,
727-CY7C1062DV33-10
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Untitled
Abstract: No abstract text available
Text: CY7C1010DV33 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Pin and function compatible with CY7C1010CV33 The CY7C1010DV33 is a high performance CMOS Static RAM organized as 256 K words by 8 bits. Easy memory expansion is
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CY7C1010DV33
CY7C1010DV33
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Untitled
Abstract: No abstract text available
Text: CY7C1021CV33 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1021CV33 is a high performance CMOS static RAM
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CY7C1021CV33
CY7C1021CV33
I/O16)
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