STA2907AN
Abstract: STC2222AN
Text: STA2907AN Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Large collector current : IC=-600mA • Low collector saturation voltage • Complementary pair with STC2222AN Ordering Information
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STA2907AN
-600mA
STC2222AN
STA2907A
O-92N
KSD-T0C058-000
STA2907AN
STC2222AN
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STC2222N
Abstract: TO-92n STA2907N STC2222 s*c*2222
Text: STC2222N Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Large collector current : IC=600mA • Low collector saturation voltage : VCE sat =0.4V(MAX.) • Complementary pair with STA2907N
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STC2222N
600mA
STA2907N
STC2222
O-92N
KSD-T0C009-001
STC2222N
TO-92n
STA2907N
STC2222
s*c*2222
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STA2907N
Abstract: STC2222N
Text: STA2907N Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Large collector current : IC=-600mA • Low collector saturation voltage : VCE sat =-0.4V(Max.) @ IC=-150mA, IB=-15mA • Complementary pair with STC2222N
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STA2907N
-600mA
-150mA,
-15mA
STC2222N
STA2907
O-92N
KSD-T0C026-001
STA2907N
STC2222N
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STC2222
Abstract: No abstract text available
Text: STC2222A NPN Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 40V • Collector Power Dissipation: PC max =625mW • Refer STC2222 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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STC2222A
625mW
STC2222
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STA2907AN
Abstract: STC2222AN
Text: STC2222AN Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Large collector current : IC = 600mA • Low collector saturation voltage • Complementary pair with STA2907AN Ordering Information
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STC2222AN
600mA
STA2907AN
STC2222A
O-92N
KSD-T0C057-000
STA2907AN
STC2222AN
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ZT2015
Abstract: SDT1000
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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SDT1000
Abstract: mt1888 ST54 2n16 DT6104 Stc1094 1205t MHT8012 usaf520es070 usaf521es071
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
SDT1000
mt1888
ST54
2n16
DT6104
Stc1094
1205t
MHT8012
usaf520es070
usaf521es071
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SDT1000
Abstract: DT6104 RCA508 1205t MJ8400 MD-21 XT2C M021 857m 25T80
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
100mT
800kSA
1561A608
1561A615
800MA
STC1094
SDT1000
DT6104
RCA508
1205t
MJ8400
MD-21
XT2C
M021
857m
25T80
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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ZT2015
Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
ZT2015
SDT1000
MHT8012
857m
A400M
Stc1094
1205t
B170026
0805T
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