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    STC4606 MOSFET Search Results

    STC4606 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    STC4606 MOSFET Datasheets Context Search

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    stc4606

    Abstract: stc*4606 30V 60A power p MOSFET stc4606 MOSFET mosfet p 30v 60a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P-channel power mosfet 30V 20V 60A power p MOSFET N and P MOSFET
    Text: STC4606 N&P Pair Enhancement Mode MOSFET 6.9A / -6.0A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance


    Original     		PDF STC4606 STC4606 -30V/-6 STC4606LG stc*4606 30V 60A power p MOSFET stc4606 MOSFET mosfet p 30v 60a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P-channel power mosfet 30V 20V 60A power p MOSFET N and P MOSFET

    STC4606

    Abstract: No abstract text available
    Text: STC4606 N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance


    Original     		PDF STC4606 STC4606 -30V/-6