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    STK 100A Search Results

    STK 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    100A474S10Y Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT Visit Renesas Electronics Corporation
    100A474S4Y8 Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT Visit Renesas Electronics Corporation
    100A484S4-5Y Renesas Electronics Corporation 4K X 4 ECL I/O SRAM Visit Renesas Electronics Corporation
    100A474S4-5Y8 Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT Visit Renesas Electronics Corporation
    100A474S8DF Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT Visit Renesas Electronics Corporation
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    STK 100A Price and Stock

    ADDON FOCLNR-STK100-AO

    XCVR CLEANING STICK DESIGNED FOR XCVR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC FOCLNR-STK100-AO 1
    • 1 $175.21
    • 10 $175.21
    • 100 $175.21
    • 1000 $175.21
    • 10000 $175.21
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    STK 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U630H16

    Abstract: U630H16XS W2565 2ETA
    Text: Obsolete - Not Recommended for New Designs U630H16XS HardStore 2K x 8 nvSRAM Die Features Description • The U630H16 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In


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    PDF U630H16XS U630H16 U630H16XS W2565 2ETA

    STK 3205

    Abstract: STK 405 100 N
    Text: Obsolete - Not Recommended for New Designs U630H64XS HardStore 8K x 8 nvSRAM Die Features Description • The U630H64 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In


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    PDF U630H64XS U630H64 U630H16XS U630H64XS STK 3205 STK 405 100 N

    Untitled

    Abstract: No abstract text available
    Text: Kraft- und Dehnungssensoren. Messen, Prüfen, Überwachen. Edition 2015 Kraft- und Dehnungssensoren von ­Baumer ­verbinden b ­ ewährte ­Technologien mit ­anspruchsvollen ­Innovationen. 1 Inhalt. Einleitung 1 Displayboxen DDBF Einleitung  Übersicht Kraft- und Dehnungssensoren 


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    PDF CH-8501 DE-61169 0x/12 11xxxxxx

    PDIP24

    Abstract: U635H16 A-9215
    Text: Obsolete - Not Recommended for New Designs U635H16 PowerStore 2K x 8 nvSRAM Features Description • The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile


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    PDF U635H16 U635H16 PDIP24 A-9215

    PDIP28

    Abstract: U630H16 GR47 NECO STK 480
    Text: Obsolete - Not Recommended for New Designs U630H16 HardStore 2K x 8 nvSRAM Features Description • The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In


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    PDF U630H16 U630H16 PDIP28 GR47 NECO STK 480

    303F

    Abstract: PDIP28 U637H256
    Text: U637H256 CapStore 32K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Time ‡ 10 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles to SRAM


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    PDF U637H256 M3015 PDIP28 303F PDIP28 U637H256

    303F

    Abstract: PDIP28 U637H256 U637H256DK
    Text: U637H256 CapStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Time ‡ 10 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles


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    PDF U637H256 M3015 303F PDIP28 U637H256 U637H256DK

    303F

    Abstract: No abstract text available
    Text: Obsolete - Not Recommended for New Designs UL635H256 Low Voltage PowerStore 32K x 8 nvSRAM Features Description • The UL635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile


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    PDF UL635H256 UL635H256 303F

    Untitled

    Abstract: No abstract text available
    Text: UL634H256 Low Voltage PowerStore 32K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 35 and 45 ns Access Times ‡ 15 and 20 ns Output Enable Access Times ‡ ICC = 8 mA typ. at 200 ns Cycle Time ‡ Automatic STORE to EEPROM


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    PDF UL634H256 M3015

    303F

    Abstract: No abstract text available
    Text: Obsolete - Not Recommended for New Designs UL631H256 SimtekLow Voltage SoftStore 32K x 8 nvSRAM Features Description • The UL631H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile


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    PDF UL631H256 UL631H256 330mil) 303F

    303F

    Abstract: U631H256
    Text: U631H256 SoftStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Times ‡ 10 ns Output Enable Access Times ‡ Software STORE Initiation ‡ Automatic STORE Timing


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    PDF U631H256 M3015 U631H256 U631H256SM PDIP28 300mil) 330mil) 303F

    u637256dk

    Abstract: 303F PDIP28 U637256
    Text: U637256 CapStore 32K x 8 nvSRAM Not Recommend For New Designs Features Description ‡ CMOS non volatile static RAM 32768 x 8 bits ‡ 70 ns Access Time ‡ 35 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles


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    PDF U637256 M3015 u637256dk 303F PDIP28 U637256

    u637256dk70z

    Abstract: u637256dk 303F PDIP28 U637256
    Text: U637256 CapStore 32K x 8 nvSRAM Features Description ‡ CMOS non volatile static RAM 32768 x 8 bits ‡ 70 ns Access Time ‡ 35 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles to SRAM ‡ Automatic STORE to EEPROM


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    PDF U637256 M3015 PDIP28 U637256 u637256dk70z u637256dk 303F PDIP28

    SOP24

    Abstract: PDIP28 U631H16 a9235
    Text: Obsolete - Not Recommended for New Designs U631H16 SimtekSoftStore 2K x 8 nvSRAM Features Description • The U631H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile


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    PDF U631H16 U631H16 PDIP28 300mil) SOP24 PDIP28 a9235

    U632H16

    Abstract: Stk 2048 11
    Text: U632H16 PowerStore 2K x 8 nvSRAM Not Recommended For New Designs Features ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25 ns Access Times 12 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle


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    PDF U632H16 M3015 c-9481 600mil) U632H16 Stk 2048 11

    U632H16

    Abstract: No abstract text available
    Text: U632H16 PowerStore 2K x 8 nvSRAM Features ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25 ns Access Times 12 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


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    PDF U632H16 M3015 600mil) U632H16

    U631H256SM

    Abstract: 303F U631H256
    Text: U631H256 SoftStore 32K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Times ‡ 10 ns Output Enable Access Times ‡ Software STORE Initiation ‡ Automatic STORE Timing ‡ 106 STORE cycles to EEPROM


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    PDF U631H256 M3015 U631H256 U631H256SM PDIP28 300mil) 330mil) 303F

    STK 641

    Abstract: C505C DS301 STK IC dipsw_4 CIA DSP 402 STK 6
    Text: CANopen-Chip System-Manual Ausgabe Februar 2000 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG CANopen-Chip Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das


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    PDF L-370d D-55135 STK 641 C505C DS301 STK IC dipsw_4 CIA DSP 402 STK 6

    C505C

    Abstract: KABEL KOMPLETT STK 641 DS301 stk 402 STK IC MM-214
    Text: CANopen-Chip System-Manual Ausgabe Februar 2001 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG CANopen-Chip Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das


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    PDF L-315d L-370d D-55135 C505C KABEL KOMPLETT STK 641 DS301 stk 402 STK IC MM-214

    Untitled

    Abstract: No abstract text available
    Text: STK0160D Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=4.3pF(Typ.) Low gate charge : Qg=4.5nC(Typ.) Low RDS(on) : RDS(on)=11.5Ω(Max.) D D G Ordering Information


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    PDF STK0160D STK0160 O-252 KSD-T6O003-005

    Untitled

    Abstract: No abstract text available
    Text: STK0170 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDSS=700V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On resistance: RDS(on)=12.5  Low Crss: Crss=2.5pF (Typ.)  RoHS compliant device (Max.)


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    PDF STK0170 30-NOV-12 KSD-T0A013-003

    STK412-750

    Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
    Text: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc


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    PDF SELT2WA10C SELT2WC10C SELT2WD10C SELT2WE10C SELT2WF10C SELT2WH10C SELT2WJ10C SELT2WK10C SELT2WA13C SELT2WC13C STK412-750 STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870

    80w 2ch audio amplifier

    Abstract: STK CLASS D amplifier stk audio amplifier STK power amplifier STK audio power amplifier STK405-120A STK-405 STK405-070A STK405-090A STK405-110A
    Text: S TK Audio Power Amplifier STK405-000A Series ★2ch./I package, B Class Amplifier, ± Power Supply ★ Rl = 6 Q ★10W/ch. to 80W/ch. ★THD = 10% Recommended Maximum Ratings Operating Conditions Operating Characteristics Recommend Operating Conditions at Test Ci rcuit


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    PDF STK405-000A STK405-010A STK405-030A STK405-050A STK405-070A STK405-090A STK405-100A STK405-110A STK405-120A 80w 2ch audio amplifier STK CLASS D amplifier stk audio amplifier STK power amplifier STK audio power amplifier STK405-120A STK-405 STK405-070A STK405-090A STK405-110A

    YTF840

    Abstract: No abstract text available
    Text: TOSHIBA De J ^ O ^ S S O í D I S C R E T E / O P T 03- 9097250 T O S H IB A 99D D IS C R E T E / O P T O 16900 QOlk^QQ D r -3 7 -/3 TOSHIBA FIELD EFFECT TRANSISTOR ¿jto siu iu i SEMICONDUCTOR YTF840 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI)


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    PDF YTF840 250uA Ta-258C) Tc-25Â Tj-150Â 00A/us YTF840