stk 080
Abstract: STK080 STK082-105 STK-078-105 STK-078 STK-080 sTK-O80 STK 082 STK078-105 STK-O78
Text: \Features r @ l M S T , l C h a n n ebl y 2 P o w e rS u p p l i e s . I AF output powerSTK-075: l5W min., STKO77:2OW min.,STK-O78:24W min.,STK-080: 3 0 Wm i n . ,S T K - 0 8 2 : 3 5 Wm i n . S T K - 0 8 3 : 4 0 W min. Vaamax OperatingCaseTemperature T6 StorageTemperature
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powerSTK-075:
STK-O78:
STK-080:
STK-082-105
STK-078-105
STK080
20to20kHz,
100mA
20to20kHz
sTK-O80,
stk 080
STK080
STK082-105
STK-078-105
STK-078
STK-080
sTK-O80
STK 082
STK078-105
STK-O78
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Untitled
Abstract: No abstract text available
Text: RoHS C omp liant SCHOTTKY BARRIER RECTIFIERS PLASTIC MATERIAL HAS UL 94V-0 CLASSIFICATION o o OPERATING AND STORAGETEMPERATURE -55 C to +150 C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum
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1S100
ITO-220
AMPERE-SCHOTTKY/TO-247
SR3020C
SR3030C
SR3035C
SR3040C
SR3045C
SR3050C
SR3060C
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MP2497
Abstract: MP2482 MP2423 MP2467 MP2480 MP2492 MP2468 MP2493 MP2481 MP2404
Text: Microwave Schottky Ring Quads FEATURES E3 Low Inductance Leadless Rings High Fco High Temperature Tri-Metal M1 E7 ENVIRONMENTAL RATINGS Maximum Operating Temperature. - - - - - - - -65°C to+200°C StorageTemperature - - - - - - - - - -65°C to+200°C PowerDissipation @ 25°C - - - - - - 100mW Derate
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100mW
MP2400
MP2401
MP2402
MP2403
MP2404
MP2405
MP2406
MP2407
MP2408
MP2497
MP2482
MP2423
MP2467
MP2480
MP2492
MP2468
MP2493
MP2481
MP2404
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Untitled
Abstract: No abstract text available
Text: R6046FNZ 10V Drive Nch MOSFET - R6046FNZ Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
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R6046FNZ
RdsOnVgs10000
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ASTM-D-1308-02
Abstract: SCT7650 3M microtouch controller ASTM-F-1598-95 SCT3250 3M Touch Systems capacitive touch screen theory SCT32 30KV microtouch
Text: 3M MicroTouch System SCT7650EX ™ Rugged Solution for Impact Strength and User Safety The 3M MicroTouch System SCT7650EX is a rugged version of 3M's industry-leading surface capacitive system, the 3M MicroTouch System SCT3250EX, which is created by laminating
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SCT7650EX
SCT7650EX
SCT3250EX,
SCT7650.
ASTM-D-1308-02
SCT7650
3M microtouch controller
ASTM-F-1598-95
SCT3250
3M Touch Systems
capacitive touch screen theory
SCT32
30KV
microtouch
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APT30S20B
Abstract: APT20M36BLL APT30S20S
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30S20B APT30S20S 200V 200V 45A 45A 2 1 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses
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APT30S20B
APT30S20S
O-247
APT30S20B
APT20M36BLL
APT30S20S
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20 amp MOSFET transistor
Abstract: MOSFET POWER TRANSISTOR DU2880V
Text: an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880V Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C
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DU2880V
5-j14
20 amp MOSFET transistor
MOSFET POWER TRANSISTOR
DU2880V
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APT20M36BLL
Abstract: APT60S20B APT60S20S
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT60S20B APT60S20S 200V 200V 75A 75A 2 1 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses
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APT60S20B
APT60S20S
O-247
APT20M36BLL
APT60S20B
APT60S20S
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UF2815OJ
Abstract: No abstract text available
Text: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C
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UF2815OJ
-65to
UF2815OJ
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APT15S20KCT
Abstract: APT20M36BLL
Text: 1 3 TO-220 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15S20KCT G 1 200V 2X25A *G Denotes RoHS Compliant, Pb Free Terminal Finish. 3 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode
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O-220
APT15S20KCT
2X25A
O-220
APT20M36BLL
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PH1214-2M
Abstract: .15 j63 1.5 j63 1035 transistor
Text: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH1214-2M
214-2M
PH1214-2M
.15 j63
1.5 j63
1035 transistor
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transistor c 2499
Abstract: transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499
Text: E XF .- an AMP company r = RF MOSFET Power Transistor, 2 - 175 MHz 12OW, 28V DU28120T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
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DU28120T
S-16OpF
DU26120T
transistor c 2499
transistor tj 2499
12OW
capacitor 4 f
XF 020
transistor D 2499
DU28120T
22 pf trimmer capacitor
81 210 W
transistor 2499
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13MM
Abstract: PH3134-2OL transistor f20 PH3134
Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH3134-2OL
13MM
PH3134-2OL
transistor f20
PH3134
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h33 diode
Abstract: No abstract text available
Text: MIVR 42095 mn NEGATIVE HIGH TEMPERATURE REGULATOR Designed for use in high temperature environments FEATURES • Output current to 1.5 amps • Input voltage to -30V • Internal short circuit protection, foldbackand current limiting • StorageTemperature +250°C
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22-PIN
h33 diode
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dc3100
Abstract: No abstract text available
Text: Ceramic High Pass Filter 500, HFCN-3800 4250 to 10000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C StorageTemperature -55°C to 100°C RF Power Input *derate linearly to 3W at 100°C ambient 7W* • • • • • • Low Cost Small size
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HFCN-3800
TB-285
PL-158)
M101247
EDR-6982/4
dc3100
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Untitled
Abstract: No abstract text available
Text: Surface Mount Voltage Variable Attenuator 50Q, eva-3ooo 50 to 3000 MHz Maximum Ratings Operating Temperature Features • • • • • • -45°C to 85°C StorageTemperature -55°C to 100°C Absolute Supply Voltage V+ 7V Absolute Max. Control Voltage(Vctrl)
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HE1135
EVA-3000
Fax417-335-5945*
EUROPE44-1252-832600
Fax44-1252-837010
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HA 16601 A
Abstract: M94669
Text: SurfaceMount Frequency Mixer_ LAVI-25VH+ US Patent 6,807,407 Level 23 LO Power +23 dBm , Features Maximum Ratings Operating Temperature StorageTemperature LO Power RF Power • • • • • -45°C to 85°C -55°C to 100oC +25dBm +23dBm Pin Connections
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LAVI-25VH+
100oC
25dBm
23dBm
CK605
02dBm
Fax417-335-5945*
EUROPE44-1252-832600
Fax44-1252-837010
HA 16601 A
M94669
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100-C
Abstract: FF1145 VBFZ-4000 pass band filter 8000 MHz
Text: Coaxial Band Pass Filter 500, VBFZ-4000+ 3500 to 4500 MHz Features Maximum Ratings Operating Temperature -55°C to 85°C StorageTemperature_-55°C to 100°C RF Power Input*_7W at 25°C *P a ssb a n d ra tin g , derate lin e a rly to 3 W a t 100 °C a m b ien t.
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VBFZ-4000+
100-C
16GHz
FF1145
VBFZ-4000-S+
Fax417-335-5945
EUROPE44-1252-832600
Fax44-1252-837010
VBFZ-4000
pass band filter 8000 MHz
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Untitled
Abstract: No abstract text available
Text: F M C 171 HP 1-01 k u , k-Bcind Power GaAs Modules ABSOLUTE MAXIMUM RATINGS Am bient Tem perature Ta = 25 C PaKttneter Rating Unit DC Input Voltage VDD 10 V DC Input Voltage VGG -7 V Input Power Pin 11.5 dBm StorageTemperature Tstg -55 t o +125 °C Operating Case Temperature
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-15dBm
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tc5117400f
Abstract: TC5117400J
Text: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced
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TC5117400J/Z/FT-60/70
TC5117400J/Z/FT-60/70
TC5117400J/Z/FT.
1MX16
tc5117400f
TC5117400J
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rs232 encoder decoder schematic diagram
Abstract: MT8950AC decoding technique of non return to zero format i
Text: ISO-CMOS ST-BUS FAMILY MITEL MT8950 Data Codec Features ISSUE 4 November 1990 Ordering Information • • Transparent coding and decoding of 0 to 8, 9.6 and 19.2 kbps data Coding compatible to PCM voice channels at 56/64 kbps in ST-BUS format Automatic line polarity detection and correction
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MT8950
MT8950AC
MT8950
rs232 encoder decoder schematic diagram
decoding technique of non return to zero format i
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CS4810
Abstract: No abstract text available
Text: Temic U2791B S e m i c o n d u c t o r s 1000-MHz Quadrature Demodulator Description The U2791B silicon monolithic integrated circuit is a quadrature demodulator which is manufactured using TEMIC Semiconductors’ advanced U HF technology. This demodulator features a frequency range from
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U2791B
1000-MHz
U2791B
D-74025
04-Feb-99
CS4810
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led bar siemens
Abstract: No abstract text available
Text: SIEMENS CfIPNTSi OPTO SIEMENS 44E D Ô23b32b DD OM ^n S ISIEX OLB 2620 YELLOW YLB 2720 GREEN GLB 2820 HIGH EFFICIENCY RED LIGHT BARS T- Hum. Displays Bar Graphs Light Bars Package Dimensions in Inches mm 16 IS M 13 12 I I 10 9 l*J Ui w y r?l FE A TU R E S
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23b32b
OLB2620
YLB2720
GLB2820
led bar siemens
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SST5484
Abstract: No abstract text available
Text: 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number -0 .3 to - 3 -2 5 3 loss Min mA 1 2N/SST5485 -0 .5 to - 4 -2 5 3.5 4 2N/SST5486 -2 1 0 -6 -2 5 4 8 V G S (off) (V) V (B R )G S S Min (V)
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2N/SST5484
2N5484
2N5485
2N5486
2N/SST5485
2N/SST5486
SST5484
SST5485
SST5486
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