U19193E
Abstract: cmps a42 transistor U17792E ptc100 R01UH0119EJ0300 F0103H nec f0123h SLC-101 transistor P40 NF 10L SLC101
Text: User’s Manual 16 PD78F8040, 78F8041, 78F8042, 78F8043 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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PD78F8040,
78F8041,
78F8042,
78F8043
16-Bit
R01UH0119EJ0300
U19193E
cmps a42 transistor
U17792E
ptc100
R01UH0119EJ0300
F0103H
nec f0123h
SLC-101
transistor P40 NF 10L
SLC101
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TMC0281
Abstract: NMI120 Tmc028 CLD271 es051 OVF20 PM581 y455 cms P32 sot 23 IMS05
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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V854TM
PD703006
PD703008
PD70F3008
PD703008Y
PD70F3008Y
U11969JJ3V0UM00
11PWM.
14PD70F3008,
70F3008Y.
TMC0281
NMI120
Tmc028
CLD271
es051
OVF20
PM581
y455
cms P32 sot 23
IMS05
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Untitled
Abstract: No abstract text available
Text: Preliminary User’s Manual 78K0R/KF3-L 16-bit Single-Chip Microcontrollers PD78F1010 μPD78F1011 μPD78F1012 Document No. U19459EJ1V0UD00 1st edition Date Published December 2008 NS 2008 Printed in Japan [MEMO] 2 Preliminary User’s Manual U19459EJ1V0UD
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78K0R/KF3-L
16-bit
PD78F1010
PD78F1011
PD78F1012
U19459EJ1V0UD00
U19459EJ1V0UD
G0706
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Untitled
Abstract: No abstract text available
Text: Preliminary User’s Manual 78K0R/KG3-L 16-bit Single-Chip Microcontrollers PD78F1013 μPD78F1014 Document No. U19460EJ1V0UD00 1st edition Date Published November 2008 NS 2008 Printed in Japan [MEMO] 2 Preliminary User’s Manual U19460EJ1V0UD NOTES FOR CMOS DEVICES
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78K0R/KG3-L
16-bit
PD78F1013
PD78F1014
U19460EJ1V0UD00
U19460EJ1V0UD
G0706
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Untitled
Abstract: No abstract text available
Text: Preliminary User’s Manual 78K0R/Kx3-L 16-bit Single-Chip Microcontrollers PD78F1000 μPD78F1001 μPD78F1002 μPD78F1003 μPD78F1004 μPD78F1005 μPD78F1006 μPD78F1007 μPD78F1008 μPD78F1009 Document No. U19291EJ1V0UD00 1st edition Date Published July 2008 NS
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78K0R/Kx3-L
16-bit
PD78F1000
PD78F1001
PD78F1002
PD78F1003
PD78F1004
PD78F1005
PD78F1006
PD78F1007
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E1115
Abstract: No abstract text available
Text: MICRON SE MICONDUCTOR INC b?E D BB fe1115 4'ì OOOTHSfl STT tB MRN ADVANCE MT5LC1001 1 MEG X 1 SRAM M IC R O N SRAM 1 MEG X 1 SRAM LOW VOLTAGE • All I /O pins are 5V tolerant • High speed: 15,17,20,25, 35 and 45ns • High-performance, low-power, CMOS double-metal
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e1115
MT5LC1001
28-Pin
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10K J
Abstract: 082B HJM072 NJM072B tl o82 tl 072
Text: NJM072B/082B, 072/082 2 B K A y J - F E T A * * - ^ > is t NJMQ72B/082B, «JM072/0821Ì , ^ 7 > 7 'T 'Ä ^ ^ - U - K » ftT U S * S À i i 'i v f - y v x , W ftt L, Ì C Z - f X, S ^ C I W L T Stt. 16A * * 7 -fe -y i > f $ S I ] < 7 i E J l £ « <b -P T l ' * T o
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NJM072B/082B
NJM072B
HJM072/Ã
NJM072BD/082BD
NJM072D/0B2D
HJM072BV/MJMDB2BV
NJMQ728M/082BM
NJMQ72M
NJMQ72BL/NJM082BL
HJMQ72lyHJM082
10K J
082B
HJM072
tl o82
tl 072
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STT-111
Abstract: No abstract text available
Text: REV. Status ISSUE 1 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C 1. Leakage Inductance; 130 ^H MAX 2. DC Resistance; Primary (1 - 2 ) 5.0 Q MAX Secondary (3 - 4 ) 2.5 0 MAX Tertiary (5 - 6 ) 2.5 Q MAX 3. Primary ET-constant; 200V- f i s MIN 4. Turns Ratio;
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P-A1-11371
ACAD\MXFMR\A1113711
STT-111
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Untitled
Abstract: No abstract text available
Text: REV. Status ISSUE 1 8 /8 /9 5 TS A. Electrical specifications @ 25 ° C 1. Leakage Inductance; 30 /iH MAX 2. DC Resistance; Primary (1 -2 ) 2.5 Q MAX Secondary (3 -4 ) 1.5 0 MAX Tertiary (5 -6 ) 1.5 0 MAX 3. Primary ET-constant; 9 0 V - ^ s MIN 4. Turns Ratio;
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P-A1-11370
ACAD\MXFMR\A1113701
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STT-101
Abstract: No abstract text available
Text: R EV. S ta t u s ISSUE 1 6 / 3 / 9 2 TS ISSUE 2 8 / 2 0 / 9 2 TS ISSUE 3 TEMECULA WAS CARSON ADDED NOTE 7 & DATE CODE 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C o 1. Leakage Inductance; 15/a H MAX 2. DC Resistance; Primary (1-2) 2.5 Q MAX Secondary (3—4) 2.5 0 MAX
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A1103591
STT-101
STT-101
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STT-106
Abstract: No abstract text available
Text: REV. S ta tu s A. Electrical specifications @ 25 ° C ISSUE 1 8 /8 /9 5 TS CD O 1. Leakage Inductance; 200 ^ H MAX 2. DC Resistance; Primary ( 1 - 2 ) 7.0 Q MAX Secondary ( 3 - 4 ) 7.0 0 MAX Tertiary ( 5 - 6 ) 7.0 Q MAX 3. Primary ET-constant; 2 8 0 V - f i s MIN
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P-A1-11369
ACAD\MXFMR\A1113691
STT-106
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trigger transformer
Abstract: STT-112 A1122-1 800PF
Text: REV. S ta tu s REVISION 8 /2 7 /9 9 TS Encapsulated Trigger Transformer C£ A. Electrical specifications @ 25° C Ld 1. Leakage Inductance; 200//H MAX 2. DC Resistance; Primary (1 - 2 ) 7.0Q MAX Secondary (3 - 4 ) 3.50 MAX Tertiary (5 - 6 ) 3.50 MAX 3. Prim ary ET—constant;
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200//H
2600Vrms
P-A1-12211
ACAD\MXFMR\A1122111
trigger transformer
STT-112
A1122-1
800PF
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STT-104
Abstract: trigger transformer
Text: REV. S ta tu s A. Electrical specifications @ 25 ° C ISSUE 1 8 /8 /9 5 TS o 1. Leakage Inductance; 25 /iH MAX 2. DC Resistance; Primary ( 1 - 2 ) 2.5 Q MAX Secondary ( 3 - 4 ) 2.5 0 MAX Tertiary ( 5 - 6 ) 2.5 Q MAX 3. Primary ET-constant; 9 0 V - ^ s MIN
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P-A1-11368
ACAD\MXFMR\A1113681
STT-104
trigger transformer
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STT-102
Abstract: P-A1-10698
Text: REV. S ta tu s ISSUE 1 6/3/92 TS ISSUE 2 8/20 /92 TS ISSUE 3 TEMECULA WAS CARSON 6/15/95 TS ISSUE 4 ADDED NOTE 7 REV DIMS 6/27/95 TS A. Electrical specifications @ 25 ° C OL Ld CD 1. Leakage Inductance; 50 /i H MAX 2. DC Resistance; Primary ( 1 - 2 ) 5.0 Q MAX
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P-A1-10698
ACAD\MXFMR\A1106981
STT-102
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Marking Code 3E
Abstract: STT-108
Text: REV. Status IS S U E 1 6 / 3 / 9 2 TS A. Electrical specifications @ 25 ° C 00 o 1. Leakage Inductance; 6 0 / ¿H MAX IS S U E 2 8 / 2 0 / 9 2 TS IS S U E 3 TEM ECULA W AS C A R SO N A D D E D NO TE 7 <3e DATE C O D E 8 / 7 / 9 5 TS T 2. DC Resistance;
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60/iH
P-A1-10700
ACAD\MXFMR\A1107001
STT-108
Marking Code 3E
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STT-103
Abstract: No abstract text available
Text: REV. S ta tu s IS S U E 1 6 / 3 / 9 2 TS IS S U E 2 8 / 2 0 / 9 2 TS IS S U E 3 TEM ECULA W AS C A R SO N A D D E D NO TE 7 <3e DATE C O D E 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C K) O 1. Leakage Inductance; 100 ^H MAX 2. DC Resistance; Primary (1 -2 ) 7.0 Q MAX
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P-A1-10699
ACAD\MXFMR\A1106991
STT-103
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STT-107
Abstract: trigger transformer
Text: REV. Status IS S U E 1 7 / 8 / 9 2 TS IS S U E 2 TEM ECULA W AS C A R SO N A D D E D NO TE 7 & DATE C O D E 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C 1. Leakage Inductance; 2 0 /¿H MAX 2. DC Resistance; Primary (1 -2 ) 2.5 Q MAX Secondary (3—4) 1.5 0 MAX
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ACAD\MXFMR\A1107161
STT-107
trigger transformer
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STT-109
Abstract: 10717
Text: REV. Status A. Electrical specifications @ 25 ° C IS S U E 1 7 / 8 / 9 2 TS <J) o 1. Leakage Inductance; 130 ^ H MAX 2. DC R esistance; Prim ary ( 1 - 2 ) 7.0 Q MAX Se cond ary (3 — 4) 3.5 0 MAX 3. Prim ary ET— constant; 2 8 0 V - f i s MIN 4. Turns Ratio;
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P-A1-10717
ACAD\MXFMR\A1107171
STT-109
10717
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CSA-C22
Abstract: HYBRID TRANSFORMER
Text: REV. S t a t u s REVISION 0 8 / 1 6 / 9 9 TS REVISION A CHANGED MECHANICAL SPECIFICATION 02/27/01 YS SURFACE MOUNT HYBRID TRANSFORMER A. Electrical specifications @ 25'C 1. Pri source impedance; 6000CT 2. Sec load impedance; 600QCT 3. MAX output power; —4 5 ~ + 7 d B m
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6000CT
600QCT
300Hz
200Hz
E138028
1500Vrms
500Vrms
TS1106
CSA-C22
HYBRID TRANSFORMER
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STT 433
Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium
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RX1214B170W
FO-91B.
71106Eb
STT 433
variable capacitor
erie ceramic
RX1214B170W
Tekelec
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STT 433
Abstract: No abstract text available
Text: Preliminary Radiation Hardened 204ARPQ Fibre C h a n n e l R e c e iv e r For Space Applications 1 DATA HCHNP % S rI »IDOVTÏ10:0| HOîNN El's 204ARPQ RP for HDLF1NP CLOCK 2/ r * DATA HOLPJNN RAD-PAK high speed Fi RECl CLOCK LPBKEN -bre Channel Receiver inte
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204ARPQ
TDA204A,
204ARPQ
minini11iuin
L08XTT
TD11E41
0DDG43S
STT 433
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Untitled
Abstract: No abstract text available
Text: b S G l l S P aQTflTEt, bS2 NSC1 o National Semiconductor PRELIMINARY General Description Features This minimum skew clock driver is designed for Clock Gen eration and Support CGS applications operating from 33 MHz to 80 MHz. The devices guarantee minimum output
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CGS64/74B2529
CGS74/64B2529
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philips ferrite material specifications 12nc
Abstract: Class E amplifier BDT91 BY239 LLE18150X Tekelec diode
Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigltated structure provides high emitter efficiency
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LLE18150X
7110fi5b
philips ferrite material specifications 12nc
Class E amplifier
BDT91
BY239
LLE18150X
Tekelec diode
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Untitled
Abstract: No abstract text available
Text: Ordering number EN4335A Monolithic Linear IC LA4800V Stereo Headphone Power Amplifier Overview Package Dimensions The LA4800V is a headphone stereo power amplifier IC that features a high signal-to-noise ratio, high ripple rejection, low distortion and low current consumption, making it ideal for
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EN4335A
LA4800V
LA4800V
3178-SSOP16
16-pin
20dBm
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