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    STU6N60 Search Results

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    STU6N60 Price and Stock

    STMicroelectronics STU6N60M2

    MOSFET N-CH 600V 4.5A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STU6N60M2 Tube 4 1
    • 1 $1.36
    • 10 $1.36
    • 100 $0.84307
    • 1000 $0.63299
    • 10000 $0.50428
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    Avnet Americas STU6N60M2 Tube 14 Weeks 3,000
    • 1 -
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    • 10000 $0.52358
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    Mouser Electronics STU6N60M2 903
    • 1 $1.55
    • 10 $1.08
    • 100 $0.846
    • 1000 $0.584
    • 10000 $0.523
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    STMicroelectronics STU6N60M2 903 1
    • 1 $1.52
    • 10 $1.06
    • 100 $0.83
    • 1000 $0.7
    • 10000 $0.7
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    Bristol Electronics STU6N60M2 2,550
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    STU6N60M2 2,117
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    Quest Components STU6N60M2 2,040
    • 1 $2.784
    • 10 $2.784
    • 100 $2.784
    • 1000 $1.044
    • 10000 $1.044
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    EBV Elektronik STU6N60M2 15 Weeks 75
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    STMicroelectronics STU6N60DM2

    MOSFET 600V 1.1 OHM FAST DIODE - Rail/Tube (Alt: STU6N60DM2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas STU6N60DM2 Tube 3,000
    • 1 -
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    Avnet Silica STU6N60DM2 53 Weeks 75
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    EBV Elektronik STU6N60DM2 53 Weeks 75
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    STU6N60 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STU6N60 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Scan PDF
    STU6N60DM2 STMicroelectronics MOSFET N-CH 600V 5A IPAK Original PDF
    STU6N60M2 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V IPAK Original PDF

    STU6N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STU6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETETIVE AVALANCHE DATA AT 100 oC


    Original     		STU6N60 Max220 O-220, Max220TM PDF

    STU6N60

    Abstract: No abstract text available
    Text: SGS-THOMSON [MOigœilLiera *® STU6N60 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6N 60 V dss R dS oii Id 600 V < 1 .2 Q 6.8 A . • TYPICAL RDS(on) = 1 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETETIVE AVALANCHE DATA AT 100 °C


    OCR Scan     		STU6N60 STU6N60 Max220â O-22C) Max220 PDF

    Untitled

    Abstract: No abstract text available
    Text: STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB 3 Order codes 2 1 1 2 IPAK 3 TO-220FP VDS @ TJmax RDS on max ID 650 V


    Original     		STF6N60M2, STP6N60M2, STU6N60M2 O-220FP, O-220 O-220FP STF6N60M2 STP6N60M2 O-220 PDF