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    Vishay Intertechnologies SUB75N08-10-E3

    N Channel Mosfet, 75V, 75A, To-263, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:75A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5Vrohs Compliant: Yes |Vishay SUB75N08-10-E3
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    Newark SUB75N08-10-E3 Reel 800
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    Vishay Intertechnologies SUB75N03-04

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    Bristol Electronics SUB75N03-04 390
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    Vishay Siliconix SUB75N08-10

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    Bristol Electronics SUB75N08-10 130
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    Quest Components SUB75N08-10 104
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    Vishay BLH SUB75N06-08-E3

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    Bristol Electronics SUB75N06-08-E3 105 2
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    Vishay Siliconix SUB75N06-08

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    Quest Components SUB75N06-08 76
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    SUB75N Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUB75N03-04 Vishay Intertechnology N-Channel Enhancement-Mode MOSFET, 4-mohm rDS(on) Original PDF
    SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175°C MOSFET Original PDF
    SUB75N03-04-E3 Vishay Transistor Mosfet N-CH 30V 75A 3TO-263 Original PDF
    SUB75N03-04 SPICE Device Model Vishay N-Channel Enhancement-Mode MOSFET, 4mOhm rDS(on) Original PDF
    SUB75N03-07 Vishay Siliconix MOSFETs Original PDF
    SUB75N03-07 SPICE Device Model Vishay N-Channel 30-V (x-S) MOSFET Original PDF
    SUB75N04-05L Vishay Siliconix MOSFETs Original PDF
    SUB75N04-05L-E3 Vishay Transistor Mosfet N-CH 40V 75A 3TO-263 Original PDF
    SUB75N04-05L SPICE Device Model Vishay N-Channel Enhancement-Mode Transistors, Logic Level Original PDF
    SUB75N05-06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SUB75N05-06 Vishay Intertechnology N-Channel 50-V (D-S), 175°C MOSFET Original PDF
    SUB75N05-06A Vishay Telefunken N-Channel 50-V (D-S), 175C MOSFET Original PDF
    SUB75N05-06A-E3 Vishay Transistor Mosfet N-CH 50V 75A 3TO-263 Original PDF
    SUB75N05-07 Vishay Intertechnology N-Channel 55-V (D-S), 175°C MOSFET Original PDF
    SUB75N05-07-E3 Vishay Transistor Mosfet N-CH 55V 75A 3TO-263 Original PDF
    SUB75N05-07 SPICE Device Model Vishay N-Channel 55-V (D-S), 175°C MOSFET Original PDF
    SUB75N06-07L Vishay Intertechnology N-Channel 60-V (D-S) 175°C MOSFET Original PDF
    SUB75N06-07L-E3 Vishay Transistor Mosfet N-CH 60V 75A 3TO-263 Original PDF
    SUB75N06-07L SPICE Device Model Vishay N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SUB75N06-08 Temic Semiconductors N-Channel Enhancement-Mode Transistors Original PDF

    SUB75N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7093

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		SUP/SUB75N08-10 7093 PDF

    SUB75N05-06

    Abstract: SUP75N05-06
    Text: SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		SUP/SUB75N05-06 O-220AB O-263 SUB75N05-06 SUP75N05-06 O-263 O-220AB O-263) 08-Apr-05 SUB75N05-06 SUP75N05-06 PDF

    SUB75N05-06A

    Abstract: SUP75N05-06A
    Text: SUP/SUB75N05-06A Vishay Siliconix New Product N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information: SUP75N05-06A N-Channel MOSFET


    Original     		SUP/SUB75N05-06A O-220AB O-263 SUP75N05-06A SUB75N05-06A O-220AB O-263) O-263 08-Apr-05 SUB75N05-06A SUP75N05-06A PDF

    SUB75N03-04

    Abstract: SUP75N03-04
    Text: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET


    Original     		SUP/SUB75N03-04 O-220AB O-263 SUB75N03-04 SUP75N03-04 08-Apr-05 SUB75N03-04 SUP75N03-04 PDF

    mosfet 4800

    Abstract: SUB75N06-08
    Text: SPICE Device Model SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP/SUB75N06-08 S-71502Rev. 06-Aug-07 mosfet 4800 SUB75N06-08 PDF

    SUB75N06-07L

    Abstract: SUB75N06-07L-E3 SUP75N06-07L SUP75N06-07L-E3
    Text: SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 75 0.0085 at VGS = 4.5 V • 175 °C Rated Maximum Junction Temperature Available RoHS* a COMPLIANT TO-220AB


    Original     		SUP/SUB75N06-07L O-220AB O-263 SUB75N06-07L SUP75N06-07L O-263) SUB75N06-07L-E3 O-263, SUB75N06-07L SUB75N06-07L-E3 SUP75N06-07L SUP75N06-07L-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-04 N-Channel Enhancement-Mode MOSFET, 4-mΩ rDS on Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		SUP/SUB75N03-04 PDF

    TF 4890

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		SUP/SUB75N08-10 18-Jul-08 TF 4890 PDF

    SUB75N06-06

    Abstract: SUP75N06-06
    Text: SUP/SUB75N06-06 New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 60 "75 a 0.008 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-06 Top View


    Original     		SUP/SUB75N06-06 O-220AB O-263 SUB75N06-06 SUP75N06-06 18-Jul-08 SUB75N06-06 SUP75N06-06 PDF

    SUP 03

    Abstract: SUB75N05-06A SUP75N05-06A
    Text: SUP/SUB75N05-06A Vishay Siliconix New Product N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information: SUP75N05-06A N-Channel MOSFET


    Original     		SUP/SUB75N05-06A O-220AB O-263 SUP75N05-06A SUB75N05-06A O-220AB O-263) O-263 18-Jul-08 SUP 03 SUB75N05-06A SUP75N05-06A PDF

    SUB75N05-06

    Abstract: SUP75N05-06
    Text: SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		SUP/SUB75N05-06 O-220AB O-263 SUB75N05-06 SUP75N05-06 O-263 O-220AB O-263) 18-Jul-08 SUB75N05-06 SUP75N05-06 PDF

    SUB75N06-07L

    Abstract: 771a
    Text: SPICE Device Model SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP/SUB75N06-07L S-71501Rev. 06-Aug-07 SUB75N06-07L 771a PDF

    SUB75N03-07

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V x-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP/SUB75N03-07 27-May-98 SUB75N03-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N08-10 Siliconix N-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB75N08Ć10 Top View SUP75N08Ć10 NĆChannel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		SUP/SUB75N08-10 O220AB SUB75N0810 SUP75N0810 O-220AB O-263) O-263 S-57253--Rev. 24-Feb-98 PDF

    SUB75N06-07L

    Abstract: SUP75N06-07L
    Text: SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 75a 60 0.0085 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-07L Top View N-Channel MOSFET


    Original     		SUP/SUB75N06-07L O-220AB O-263 SUB75N06-07L SUP75N06-07L O-263 S-05111--Rev. 10-Dec-00 SUB75N06-07L SUP75N06-07L PDF

    SUB75N06-08

    Abstract: SUP75N06-08
    Text: SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) O-263 S-47969--Rev. 08-Jul-96 SUB75N06-08 SUP75N06-08 PDF

    a2826

    Abstract: No abstract text available
    Text: Tem ic SUP/SUB75NÖ6-08 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary TO-220AB o TO-263 It h ;O D R A IN connected to TAB ~TT G D S Top View G D S SUB75N06-08 Top View SUP75N06-08 N-Channel M OSFET Absolute Maximum Ratings Tc = 25 °C Unless Otherwise Noted


    OCR Scan     		SUP/SUB75N O-220AB O-263 SUB75N06-08 SUP75N06-08 -220AB O-263) S-44639-- SUP/SUB75N06-08 a2826 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06-07L S ilic o n ix N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V V(BR)DSS 60 75a 0.0085 @ VGS = 4.5 V D Q TO-220AB o TO-263 t 1 0— DRAIN connected to TAB l! TPT Top View SUB75N06-07L GD S Top View


    OCR Scan     		SUP/SUB75N06-07L O-220AB SUP75N06-07L O-263 SUB75N06-07L T0-220AB O-263) O-263 S-56920--Rev. 23-Mar-98 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product ^oG PRODUCT SUMMARY r DS ON V (BR)DSS (V) •d (A) (-2) 0.007 @ V GS= 10 V 75a 0.01 @ VGS= 4.5 V 70 30 D Q TO-220AB o TO-263 t DRAIN connected to TAB 1 in G D S Top View o G D S


    OCR Scan     		SUP/SUB75N03-07 O-220AB O-263 SUP75N03-07 SUB75N03-07 S-57585-- 15-Jun-98 PDF

    7553a

    Abstract: No abstract text available
    Text: SUP/SUB75N06-12L VISHAY Siliconix T N-Channel 60-V D-S , 175°C MOSFET New Product PRODUCT SUMMARY r DS(ON) V (BR)DSS (V) •d (A) (-2) 0.012 @ VGS = 10 V 75 0.014 @ V GS= 4.5 V 70 60 D O TO-220AB o TO-263 < DRAIN connected to TAB 1 IPT G D S Top View Ô


    OCR Scan     		SUP/SUB75N06-12L O-220AB O-263 SUP75N06-12L SUB75N06-12L S-59182-- 07-Sep-98 7553a PDF

    Untitled

    Abstract: No abstract text available
    Text: _ SUP/SUB75N05-07 VISHAY Vishay Siliconix New Product N-Channel 55-V D-S , 175°C MOSFET PRODUCT SUMMARY V (BR)DSS (V ) 55 (A) Id r DS(on) ( ) 0.007 @ V GS = 10 V ±75 a 0.009 @ VGS = 4.5 V TO-220AB O TO-263 f- 1 F"! G D S Top View


    OCR Scan     		SUP/SUB75N05-07 O-220AB O-263 SUB75N05-07 SUP75N05-07 O-220AB O-263) S-60952â 19-Apr-99 PDF

    GS 069 LF

    Abstract: SUB75N06-06
    Text: SUP/SUB75N06-06 VISHAY Vishay Siliconix New Product N-Channel 60-V D-S , 175°C MOSFET PRODUCT SUMMARY V(BR)DSS (V ) r DS(on) ( ) (A) Id 0.0065 @ V GS = 10 V 60 ±75 a 0.008 @ VGS = 4.5 V D TO-220AB Q o TO-263 r 1 J l D RAIN connected to TAB iptt G D S Top V iew


    OCR Scan     		SUP/SUB75N06-06 O-220AB O-263 S-60938-- 26-Apr-99 GS 069 LF SUB75N06-06 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06-07L N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V 0.0085 @ VGS = 4.5 V V(BR)DSS 60 75a D Q TO-220AB o TO-263 t Jl 1 in r DRAIN connected to TAB Top View SUB75N06-07L GD S Top View SUP75N06-07L


    OCR Scan     		SUP/SUB75N06-07L O-220AB SUP75N06-07L O-263 SUB75N06-07L T0-220AB O-263) O-263 S-56920--Rev. 23-Mar-98 PDF

    FDS 4800

    Abstract: No abstract text available
    Text: Tem ic SUP/SUB75N06-08 S e m i c o n d u c t o r s N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) (£2) I d (A ) 60 0.008 75a D O T O -220A B o T O -263 r 1 Jl DRAIN connected to TAB G D S Top View G D S o s SUB75N06-08 Top View


    OCR Scan     		SUP/SUB75N06-08 -220A SUP75N06-08 SUB75N06-08 O-263) S-47969--Rev. 08-M-96 FDS 4800 PDF