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    SUBSCRIPT OUT OF RANGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    SUBSCRIPT OUT OF RANGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HA7-5142

    Abstract: AN544
    Text: HA-5142/883 TM Dual, Ultra Low Power Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5142/883 dual, ultra-low power operational amplifier


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    HA-5142/883 MIL-STD883 HA-5142/883 HA7-5142 AN544 PDF

    Untitled

    Abstract: No abstract text available
    Text: Conventions Used in Presenting Technical Data Polarity Conventions The voltage direction is given either: D By an arrow which points out from measuring to reference point, or D By a double subscript, whereby the first subscript is termed as the measuring point, the second subscript as


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    germanium diode smd

    Abstract: "tunnel diode" oscillator SMD Transistor Y12 "Step Recovery Diode" NF50 Z2E diode Technical Explanations power transistor tunnel diode diode varactor B11 g21 SMD Transistor
    Text: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.


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    SMD Transistor Y12

    Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
    Text: Technical Information Type Designation in Accordance with Pro Electron 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.


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    UJT APPLICATION

    Abstract: SMD Transistor Y12 "tunnel diode" oscillator SMD transistor y11 Y22 transistor smd SMD Transistor g22 y22c NF50 y-parameter Technical Explanations power transistor
    Text: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.


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    Photocoupler Q 817

    Abstract: 727 thyristor PHILIPS WIDEBAND HYBRID IC MODULES transistor 33725 DIODE S4 74 vo 727 z-diode philips catv 860 amplifier ic SNW-EQ-611 tunnel diode GaAs philips OPTICAL PICK-UP
    Text: GENERAL page Quality Pro Electron type numbering system Rating systems Letter symbols CATV parameters Appendix A - Common frequency sets for ddim measurements Appendix B - Common frequency sets for d2 measurements Appendix C - Distortion results using the CENELEC


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    transistor smd bc rn

    Abstract: SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 SMD transistor BC RN transistor ic equivalent book smd y12 GaAs tunnel diode Common collector configuration basic applications of ujt
    Text: GaAs Components Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.


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    HA2-5142/883

    Abstract: AN544
    Text: HA-5142/883 Dual, Ultra Low Power Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5142/883 dual, ultra-low power operational amplifier


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    HA-5142/883 MIL-STD883 HA-5142/883 HA2-5142/883 AN544 PDF

    AN544

    Abstract: No abstract text available
    Text: HA-5142/883 S E M I C O N D U C T O R Dual, Ultra Low Power Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5142/883 dual, ultra-low power operational amplifier


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    HA-5142/883 MIL-STD883 HA-5142/883 05A/cm2 AN544 PDF

    MPC555

    Abstract: No abstract text available
    Text: SECTION 21 DEVELOPMENT SUPPORT 21.1 Overview The visibility and controllability requirements of emulators and bus analyzers are in opposition to the trend of modern microcomputers and microprocessors where many bus cycles are directed to internal resources and are not visible externally.


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    32-bit MPC555 MPC555 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Semiconductors General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example:


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    oscillator tunnel diode

    Abstract: No abstract text available
    Text: Vishay Semiconductors General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example:


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    BLS2731-10

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Microwave Transistors General conditions. A characteristic may also be a set of related values, usually shown in graphical form. PRO ELECTRON TYPE NUMBERING FOR BLS-TYPES Basic type number Bo g ey This type designation code applies to discrete


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    Untitled

    Abstract: No abstract text available
    Text: HA-5142/883 Semiconductor Dual, Ultra Low Power Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HA-5142/883 dual, ultra-low power operational amplifier


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    HA-5142/883 HA-5142/883 20kV/V) 20nV/VHz) 24kHz 483nm 05A/cm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: ffj HA-5142/883 H A R R IS S E M I C O N D U C T O R Dual, Ultra Low Power Operational Amplifier Description The HA-5142/883 dual, ultra-low power operational amplifier provides AC and DC performance characteristics sim ilar to, or better than m ost general purpose am plifiers while only


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    HA-5142/883 HA-5142/883 483pm 05A/cm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: HA-5144/883 {£} HARRIS Quad, Ultra-Low Power Operational Amplifier January 1989 Features D escrip tio n • This Circuit Is Processed In Accordance to M il-S td 883 and Is Fully Conform ant Under th e Provisions of Paragraph 1.2.1. • Low Supply Current @ V $ = + 5 V . . + 2 5°C 320|jA (Max)


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    HA-5144/883 HA-5144/883 -550C, 1250C 200mV -200mV PDF

    SIEMENS thyristor

    Abstract: transistor smd AFE smd transistor G9
    Text: SIEMENS 1 Technical Information Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.


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    HA-5151

    Abstract: No abstract text available
    Text: H A -5151/883 ffl h a r r is Single, Low Power Operational Amplifier F eatures D escrip tio n • T his C irc u it Is P roce ssed In A c c o rd a n c e to M ll-S td 883 an d is Fu lly C o n fo rm a n t U n d e r th e P ro visio n s o f P aragraph 1.2.1. The HA-5151/883 single operational am plifier is part of a


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    HA-5151/883 -550C 1250C 200mV -200mV HA-5151 PDF

    Untitled

    Abstract: No abstract text available
    Text: HA-5154/883 gg HARRIS 1989 Features D escrip tio n • This Circuit is Processed In Accordance to Mll-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5154/883 quad operational amplifier completes the family of dielectrically Isolated bipolar amplifiers de­


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    HA-5154/883 Mll-Std883 HA-5154/883 250/iA 1250C 200mV -200mV PDF

    Untitled

    Abstract: No abstract text available
    Text: 33 HARRIS HA-5142/883 S E M I C O N D U C T O R Features Description • This Circuit Is Processed In Accordance to MIL-STD8S3 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5142/883 dual, ultra-low power operational amplifier provides AC and DC performance characteristics similar to,


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    HA-5142/883 HA-5142/883 20kV/V) 20nV/VHz) 24kHz 05A/cm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: HA-5141/883 g HARRIS Single, Ultra-Low Power Operational Amplifier January 1989 F eatures D escrip tio n • This Circuit Is Processed In Accordance to M ll-S td - The H A-5141/883 single, ultra-low power operational am plifier provide AC and DC performance characteristics


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    HA-5141/883 -550C -550C, 200mV -200mV PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SENICOND SECTOR 10E D I M303271 D133S3 R I H A -5144/883 HARRIS Quad, Ultra-Low Power Operational Amplifier T-7 9 -0 8 January 1989 Features Description • This Circuit Is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of


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    M303271 D133S3 Mll-Std883 20kV/V 75kV/V -550C 1250C 200mV -200mV PDF

    Untitled

    Abstract: No abstract text available
    Text: S HA-5152/883 h a r r is Dual, Low Power Operational Amplifier January 1989 Features D escrip tio n • This Circuit is Processed in Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions oF Paragraph 1.2.1. The HA-5152 /883 dual operational am plifier is part of a


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    HA-5152/883 Mll-Std883 HA-5152 250nA -550C -550C, 200mV -200mV PDF

    a 4514

    Abstract: No abstract text available
    Text: ffl h a - 5142/883 h a r r is Dual, U ltra-Low Power O perational Amplifier January 1989 Features D escrip tio n • This Circuit Is Processed in Accordance to Mil-Std883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Supply Current @ Vg = +5V . +25°C 160/aA (Max)


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    100Hz -550C -550C, -200mV 200mV a 4514 PDF