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    SUBSTRATE TEFLON-GLASS ER 2.55 Search Results

    SUBSTRATE TEFLON-GLASS ER 2.55 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-316SMAX200-004 Amphenol Cables on Demand Amphenol CO-316SMAX200-004 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 4ft Datasheet
    CO-316SMAX200-001 Amphenol Cables on Demand Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft Datasheet
    CO-316SMAX200-005 Amphenol Cables on Demand Amphenol CO-316SMAX200-005 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 5ft Datasheet
    CO-316SMAX200-007.5 Amphenol Cables on Demand Amphenol CO-316SMAX200-007.5 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 7.5ft Datasheet
    CO-316SMAX200-002 Amphenol Cables on Demand Amphenol CO-316SMAX200-002 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 2ft Datasheet

    SUBSTRATE TEFLON-GLASS ER 2.55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE 4005

    Abstract: DIODE aay 49 100b choke M175 SD1660 AAY49 GE DIODE
    Text: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST


    Original     		PDF SD1660 SD1660 DIODE 4005 DIODE aay 49 100b choke M175 AAY49 GE DIODE

    DIODE aay 49

    Abstract: 100MF 63V GE DIODE diode l19 AAY49 M175 SD1660 si diode
    Text: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST


    Original     		PDF SD1660 SD1660 DIODE aay 49 100MF 63V GE DIODE diode l19 AAY49 M175 si diode

    push pull class AB RF linear

    Abstract: R767 SD1492 BOX63B 400S M175 GE DIODE
    Text: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING POUT = 150 W MIN. WITH 6.5 dB GAIN


    Original     		PDF SD1492 SD1492 push pull class AB RF linear R767 BOX63B 400S M175 GE DIODE

    SD1732

    Abstract: TDS595 s3 vision LCC capacitor S2
    Text: SD1732 TDS595 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1732 TDS595) TDS595 SD1732 TDS595 s3 vision LCC capacitor S2

    SD1680

    Abstract: M175 push pull class AB RF linear DIODE aay 49 j 4005
    Text: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST


    Original     		PDF SD1680 SD1680 M175 push pull class AB RF linear DIODE aay 49 j 4005

    SD1492

    Abstract: R767 16 AWG 400S M175 GE DIODE push pull class AB RF linear l21 diode
    Text: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING P OUT = 150 W MIN. WITH 6.5 dB GAIN


    Original     		PDF SD1492 SD1492 R767 16 AWG 400S M175 GE DIODE push pull class AB RF linear l21 diode

    30mils

    Abstract: SD1732 TDS595 transistor cross ref RF UHF modulat applications of Transistor BDX 54
    Text: SD1732 TDS595 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1732 TDS595) TDS595 SD1732 30mils TDS595 transistor cross ref RF UHF modulat applications of Transistor BDX 54

    SD1680

    Abstract: DIODE aay 49 Electronic ballast 100W push pull class AB RF linear SD168 M175 GE DIODE
    Text: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST


    Original     		PDF SD1680 SD1680 DIODE aay 49 Electronic ballast 100W push pull class AB RF linear SD168 M175 GE DIODE

    applications of Transistor BDX 54

    Abstract: s3 vision
    Text: SD1732 TDS595 RF POWER BIPOLAR TRANSISTORS TV LINEAR APPLICATIONS FEATURES SUMMARY • 470 - 860 MHz Figure 1. Package ■ 25 VOLTS ■ CLASS A PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION


    Original     		PDF SD1732 TDS595) SD1732 applications of Transistor BDX 54 s3 vision

    on 5295 transistor

    Abstract: J374 on 5295 mosfet transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF18085B MRF18085BR3 MRF18085BLSR3 on 5295 transistor J374 on 5295 mosfet transistor

    MF 198 ferrite

    Abstract: capacitor j476 capacitor Marking J336
    Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF RF18085BR3 MRF18085BLSR3 MRF18085BR3 MF 198 ferrite capacitor j476 capacitor Marking J336

    TDS595

    Abstract: SD1732 s3 vision
    Text: SD1732 TDS595 RF POWER BIPOLAR TRANSISTORS TV LINEAR APPLICATIONS FEATURES SUMMARY • 470 - 860 MHz Figure 1. Package ■ 25 VOLTS ■ CLASS A PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION


    Original     		PDF SD1732 TDS595) SD1732 TDS595 s3 vision

    copper permittivity

    Abstract: MLC092
    Text: Philips Semiconductors Product specification PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN 1 • Interdigitated structure provides high emitter efficiency


    OCR Scan     		PDF OT440A PTB23001X; PTB23003X; PTB23005Xps K10kl PTB23005X PTB23001X. copper permittivity MLC092

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Microwave power transistor PLB16004U FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common base class C


    OCR Scan     		PDF PLB16004U

    NF4-5V

    Abstract: capacitor feed-through ERIE ceramic capacitor
    Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCEDATA . input matching cell allows an easier design of circuits Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.


    OCR Scan     		PDF OT437A AT-3-7-271SL PLB16012U NF4-5V capacitor feed-through ERIE ceramic capacitor

    erie feedthrough capacitors

    Abstract: PLB16012U SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCE DATA • Input matching cell allows an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors


    OCR Scan     		PDF PLB16012U OT437A OT437A. erie feedthrough capacitors PLB16012U SC15

    K 4005 transistor

    Abstract: No abstract text available
    Text: f Z 7 ^ 7 # . S G M S - 1 H 0 M » Ê t H ê r a M S 0 N SD1660 O g ! RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . . . . > 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY


    OCR Scan     		PDF SD1660 SD1660 K 4005 transistor

    Untitled

    Abstract: No abstract text available
    Text: S G S - IH O M S O N SD1732 TDS595 5 7 . RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS


    OCR Scan     		PDF SD1732 TDS595) SD1732 0G7D723

    5q 1265 rf

    Abstract: DIODE aay 49
    Text: SGS-THOMSON 5 7 . SD1492 m RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS • ■ i ■ ■ . ■ . ■ 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    OCR Scan     		PDF SD1492 SD1492 5q 1265 rf DIODE aay 49

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H Ç O M S O N IlO T M D Ê i ï. SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS > . . . . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY


    OCR Scan     		PDF SD1680 SD1680 1994SGS-THOMSON 0D70b77

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT


    OCR Scan     		PDF MRF9822T1/D MRF9822T1 MRF9822/D

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE APX bb53T31 0Q3055b bSS BGY96A/B b'lE D UHF AMPLIFIER MODULE The BGY96 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 9.6 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,


    OCR Scan     		PDF bb53T31 0Q3055b BGY96A/B BGY96 BGY96A BGY96A BGY96B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E I> • APX bbS3T31 QD3D247 bl2 BGY95A/B UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 7.5 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,


    OCR Scan     		PDF bbS3T31 QD3D247 BGY95A/B BGY95 BGY95A BGY95B bb53R31 D03D255 BGY95A

    BGY95B

    Abstract: IG17 BGY95A
    Text: BGY95A/B J V UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF am plifier module designed prim arily fo r mobile transm itting equipment operating from a nominal 7.5 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,


    OCR Scan     		PDF BGY95A/B BGY95 BGY95A BGY95B BGY95A BGY95B IG17