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    Vishay Siliconix SUD50N03-09P-E3

    MOSFET N-CH 30V 63A TO252
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    DigiKey SUD50N03-09P-E3 Digi-Reel 1
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    Vishay Siliconix SUD50N03-09P-GE3

    MOSFET N-CH 30V 63A TO252
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    Vishay Siliconix SUD50N03-09P-E3/BKN

    N-CHANNEL 30-V (D-S) MOSFET | Siliconix / Vishay SUD50N03-09P-E3/BKN
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    Vishay Intertechnologies SUD50N03-09P-T4-E3

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    Bristol Electronics SUD50N03-09P-T4-E3 1,355
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    SUD50N0309P Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUD50N03-09P Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SUD50N03-09P Vishay Siliconix MOSFETs Original PDF
    SUD50N03-09P-E3 Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SUD50N03-09P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 63A TO252 Original PDF
    SUD50N03-09P-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 63A TO252 Original PDF
    SUD50N03-09P SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

    SUD50N0309P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTM4628EV

    Abstract: r2610 ltm4628 September07 1663A B7D1
    Text: 5 4 3 2 1 REVISION HISTORY VIN+ ECO VIN TP5 TEMP TP6 + GND CIN1 150uF 35V R2 OPT CIN2 10uF 35V 1210 CIN4 10uF 35V 1210 CIN3 10uF 35V 1210 TP11 CIN5 10uF 35V 1210 TP4 1 PS INTVCC BM JEFF Z VO2+ VO2+ 3 TP3 OPT R1 10 VOUT2 TP7 INTVCC + RUN1 3 R6 OPT 2 TRACK 1 SOFT-START


    Original     		PDF 150uF VINTP10 470uF 100uF LTM4628EV LTM4628EV r2610 ltm4628 September07 1663A B7D1

    Untitled

    Abstract: No abstract text available
    Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available


    Original     		PDF SUD50N03-09P O-252 SUD50N03-09P-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: 5 4 3 2 1 REVISION HISTORY ECO REV _ DESCRIPTION 2 APPROVED PRODUCTION YAN L. DATE 06-20-13 VO1+ VIN R5 J4 CIN4 OPT CIN5 22uF 25V 1210 1210 0 OHm 0.5W 2010 R7 0805 E3 ON R2 23.2K VIN TEMP1 E4 VIN R9 10K E7 CNTR_PWR VIN CIN3 22uF 25V 1210 OFF 3 C1 220pF 1


    Original     		PDF 220pF 100uF COUT10 COUT11 COUT12 470uF LTM4633EY

    Untitled

    Abstract: No abstract text available
    Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available


    Original     		PDF SUD50N03-09P O-252 SUD50N03-09P SUD50N03-09P-E3 11-Mar-11

    74237

    Abstract: SUD50N03-09P SUD50N03-09P-E3 SUD50N03-10BP SUD50N03-10BP-E3
    Text: Specification Comparison Vishay Siliconix SUD50N03-09P vs. SUD50N03-10BP Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TO-252 Identical Part Number Replacements SUD50N03-09P-E3 Replaces SUD50N03-10BP-E3 SUD50N03-09P Replaces SUD50N03-10BP ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF SUD50N03-09P SUD50N03-10BP O-252 SUD50N03-09P-E3 SUD50N03-10BP-E3 SUD50N03-09P SUD50N03-09P, 74237 SUD50N03-10BP SUD50N03-10BP-E3

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    7804

    Abstract: AN609 SUD50N03-09P
    Text: SUD50N03-09P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD50N03-09P AN609 04-Sep-07 7804

    SUD50N03-09P

    Abstract: SUD50N03-09P-E3 SUD50N03-10P SUD50N03-10P-E3
    Text: Specification Comparison Vishay Siliconix SUD50N03-09P vs. SUD50N03-10P Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TO-252 Identical Part Number Replacements SUD50N03-09P-E3 Replaces SUD50N03-10P-E3 SUD50N03-09P Replaces SUD50N03-10P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF SUD50N03-09P SUD50N03-10P O-252 SUD50N03-09P-E3 SUD50N03-10P-E3 SUD50N03-09P SUD50N03-09P, SUD50N03-10P SUD50N03-10P-E3

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1889A LTM4624EY 4A Step-Down µModule Regulator Description Demonstration circuit 1889A features the LTM 4624EY µModule® regulator, a tiny high performance high efficiency step-down regulator. The LTM4624EY has an operating input voltage range of 4V to 14V and is able to


    Original     		PDF DC1889A LTM4624EY 4624EY LTM4624EY LTM4624 dc1889af

    SUD50N03-09P

    Abstract: SUD50N03-09P-E3 SUD50N03-10AP SUD50N03-10AP-E3
    Text: Specification Comparison Vishay Siliconix SUD50N03-09P vs. SUD50N03-10AP Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TO-252 Identical Part Number Replacements SUD50N03-09P-E3 Replaces SUD50N03-10AP-E3 SUD50N03-09P Replaces SUD50N03-10AP ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF SUD50N03-09P SUD50N03-10AP O-252 SUD50N03-09P-E3 SUD50N03-10AP-E3 SUD50N03-09P SUD50N03-09P, SUD50N03-10AP SUD50N03-10AP-E3

    LTM4627EV

    Abstract: SUD50N03-09P 0805 22uF 35V
    Text: DEMO CIRCUIT 1669 LTM4627EV QUICK START GUIDE LTM4627EV 15A High Density DC/DC µModule DESCRIPTION Demonstration circuit 1669 features the LTM 4627EV µmodule, a high-performance high efficiency step-down regulator. The LTM4627EV has an operating input voltage


    Original     		PDF LTM4627EV 4627EV LTM4627EV 150uF SUD50N03-09P 0805 22uF 35V

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1759A LTM4620A High Efficiency, Dual 13A Step-Down Power µModule Regulator DESCRIPTION Demonstration circuit 1759A features the LTM 4620AEV, the high efficiency, high density, dual 13A, switch mode step-down power module regulator. The input voltage is


    Original     		PDF DC1759A LTM4620A 4620AEV, DC1759A dc1759af

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    SI2333DS-T1-E3

    Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
    Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)


    Original     		PDF SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K

    35CE150AX

    Abstract: res 0603 samtec tmm r14 ce remote user manual 35CE DC-1669 CRCW06030000Z0ED LT 8834 TMM-103-02-L-S sanyo 6TPF330M9L
    Text: DEMO MANUAL DC1669A LTM4627EV: 15A Step-Down µModule Regulator DESCRIPTION Demonstration circuit 1669A features the LTM 4627EV Module® regulator, a high performance high efficiency step-down regulator. The LTM4627EV has an operating input voltage range of 4.5V to 20V and is able to provide


    Original     		PDF DC1669A LTM4627EV: 4627EV LTM4627EV dc1669af 35CE150AX res 0603 samtec tmm r14 ce remote user manual 35CE DC-1669 CRCW06030000Z0ED LT 8834 TMM-103-02-L-S sanyo 6TPF330M9L

    SUD50N03-09P

    Abstract: SUD50N03-09P-E3
    Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available


    Original     		PDF SUD50N03-09P O-252 SUD50N03-09P-E3 11-Mar-11 SUD50N03-09P SUD50N03-09P-E3

    ltm4628

    Abstract: res chip 2w 2512 CRCW06030000Z0ED LTM4628EV tp10 tp9 tp8 tp7 tp6 tp5 tp4 tp3 jp1 CRCW060360K4FKED 35CE150AX 08053C105KAT 1663A 2501-2-00-80-00-00-07-0
    Text: DEMO MANUAL DC1663A LTM4628EV High Efficiency, Dual 8A Step-Down Power µModule Regulator DESCRIPTION Demonstration circuit DC1663A features the LTM 4628EV, the high efficiency, high density, dual 8A output, switch mode step-down power module. The input voltage is


    Original     		PDF DC1663A LTM4628EV 4628EV, 40erefore dc1663af ltm4628 res chip 2w 2512 CRCW06030000Z0ED tp10 tp9 tp8 tp7 tp6 tp5 tp4 tp3 jp1 CRCW060360K4FKED 35CE150AX 08053C105KAT 1663A 2501-2-00-80-00-00-07-0

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    WSL2512R0100FEA

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1905A LTM4633 High Efficiency, Triple 10A Step-Down µModule Regulator Description Demonstration circuit DC1905A features the LTM 4633EY, a high efficiency, triple 10A step-down power µModule® regulator. The input voltage range is from 4.7V to 16V with


    Original     		PDF DC1905A LTM4633 DC1905A 4633EY, dc1905af WSL2512R0100FEA

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1498A LTM4620EV High Efficiency, Dual 13A Step-Down Power µModule Regulator Description DC1498A features the LTM 4620EV, the high efficiency, high density, dual 13A, switch mode step-down power module regulator. The input voltage is from 4.5V to 16V.


    Original     		PDF DC1498A LTM4620EV DC1498A 4620EV, dc1498afa

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1414B-B LTM4601AHV 5VIN to 28VIN, 12A Step-Down µModule Regulator DESCRIPTION Demonstration circuit 1414B-B features the LTM 4601AHVEV, the high efficiency, high density switch mode step-down power module. The input voltage range is 5V to 28V with a jumper selectable output voltage


    Original     		PDF DC1414B-B LTM4601AHV 28VIN, 1414B-B 4601AHVEV, dc1414b-bf

    SUD50N03-09P

    Abstract: 71001
    Text: SPICE Device Model SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N03-09P 18-Jul-08 SUD50N03-09P 71001

    Untitled

    Abstract: No abstract text available
    Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers


    Original     		PDF SUD50N03-09P O-252 SUD50N03-09P S-31272--Rev. 16-Jun-03