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    Vishay Siliconix SUM110P06-07L-E3

    MOSFET P-CH 60V 110A TO263
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    DigiKey SUM110P06-07L-E3 Cut Tape 54,575 1
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    SUM110P06-07L-E3 Digi-Reel 54,575 1
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    SUM110P06-07L-E3 Reel 54,400 800
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    RS SUM110P06-07L-E3 Bulk 449 3 Weeks 1
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    New Advantage Corporation SUM110P06-07L-E3 43,200 1
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    Vishay Siliconix SUM110P08-11L-E3

    MOSFET P-CH 80V 110A TO263
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    DigiKey SUM110P08-11L-E3 Digi-Reel 43,740 1
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    SUM110P08-11L-E3 Cut Tape 43,740 1
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    SUM110P08-11L-E3 Reel 43,200 800
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    New Advantage Corporation SUM110P08-11L-E3 4,800 1
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    Vishay Siliconix SUM110P04-04L-E3

    MOSFET P-CH 40V 110A TO263
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    DigiKey SUM110P04-04L-E3 Digi-Reel 11,849 1
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    SUM110P04-04L-E3 Cut Tape 11,849 1
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    SUM110P04-04L-E3 Reel 11,200 800
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    Vishay Siliconix SUM110P06-08L-E3

    MOSFET P-CH 60V 110A TO263
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    DigiKey SUM110P06-08L-E3 Cut Tape 2,859 1
    • 1 $5.34
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    SUM110P06-08L-E3 Digi-Reel 2,859 1
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    SUM110P06-08L-E3 Reel 2,400 800
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    New Advantage Corporation SUM110P06-08L-E3 40,800 1
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    Vishay Siliconix SUM110N10-09-E3

    MOSFET N-CH 100V 110A TO263
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    DigiKey SUM110N10-09-E3 Cut Tape 1,247 1
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    SUM110N10-09-E3 Digi-Reel 1,247 1
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    SUM110N10-09-E3 Reel 800 800
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    SUM11 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUM110N02-03 Vishay Siliconix MOSFETs Original PDF
    SUM110N02-03P Vishay Siliconix MOSFETs Original PDF
    SUM110N02-03P SPICE Device Model Vishay N-Channel 20-V (D-S) 175°C MOSFET Original PDF
    SUM110N03 Vishay Siliconix N-Channel 30-V (D-S) 175°C MOSFET Original PDF
    SUM110N03-03 Vishay Siliconix N-Channel 30-V (D-S) 175°C MOSFET Original PDF
    SUM110N03-03P Vishay Siliconix MOSFETs Original PDF
    SUM110N03-03P Vishay Telefunken N-channel 30-v (d-s) 175°C Mosfet Original PDF
    SUM110N03-03P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 110A D2PAK Original PDF
    SUM110N03-03P SPICE Device Model Vishay N-Channel 30-V (D-S), 175°C MOSFET Original PDF
    SUM110N03-03 SPICE Device Model Vishay N-Channel 30-V (D-S) 175°C MOSFET Original PDF
    SUM110N03-04P Vaishali Semiconductor N-Channel 30-V (D-S) 175°C MOSFET Original PDF
    SUM110N03-04P Vishay Siliconix MOSFETs Original PDF
    SUM110N03-04P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 110A D2PAK Original PDF
    SUM110N03-04P SPICE Device Model Vishay N-Channel 30-V (D-S) 175°C MOSFET Original PDF
    SUM110N04-02L Vishay Siliconix MOSFETs Original PDF
    SUM110N04-02L SPICE Device Model Vishay N-Channel 40-V (D-S) 200°C MOSFET Original PDF
    SUM110N04-03 Vishay Intertechnology N-Channel 40-V (D-S) 200°C MOSFET Original PDF
    SUM110N04-03 Vishay Siliconix MOSFETs Original PDF
    SUM110N04-03-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 110A D2PAK Original PDF
    SUM110N04-03L Vishay Siliconix MOSFETs Original PDF

    SUM11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D


    Original     		PDF SUM110P04-05 O-263 SUM110P04-05-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUM110P04-05 New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a Qg (Typ) –40 0.005 @ VGS = –10 V –110 185 nC APPLICATIONS RoHS D Automotive – Motor Drives – Fuel Injection


    Original     		PDF SUM110P04-05 O-263 SUM110P04-05â 08-Apr-05

    SUM110N10-09

    Abstract: sum110n10
    Text: SUM110N10-09 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V


    Original     		PDF SUM110N10-09 O-263 S-04970--Rev. 29-Oct-01 SUM110N10-09 sum110n10

    SUM110N05-06L

    Abstract: SUM110N05-06L-E3
    Text: SUM110N05-06L Vishay Siliconix N-Channel 55-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 55 rDS(on) (Ω) ID (A) 0.006 at VGS = 10 V 110 0.0085 at VGS = 4.5 V 92 Qg (Typ) 65 • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package


    Original     		PDF SUM110N05-06L O-263 SUM110N05-06L-E3 11-Mar-11 SUM110N05-06L SUM110N05-06L-E3

    SUM110P06-07L

    Abstract: SUM110P06-07L-E3
    Text: SUM110P06-07L Vishay Siliconix P-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0069 at VGS = - 10 V - 110 0.0088 at VGS = - 4.5 V - 110 VDS (V) - 60 • TrenchFET Power MOSFET • Package with Low Thermal Resistance Available


    Original     		PDF SUM110P06-07L O-263 SUM110P06-07L-E3 08-Apr-05 SUM110P06-07L SUM110P06-07L-E3

    SUM110N06-06

    Abstract: SUM110N06-06-E3
    Text: SUM110N06-06 Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 60 0.006 110a • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Industrial D


    Original     		PDF SUM110N06-06 O-263 SUM110N06-06-E3 08-Apr-05 SUM110N06-06 SUM110N06-06-E3

    SUM110N04-04

    Abstract: SUM110N04-04-E3
    Text: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 40 0.0035 at VGS = 10 V 110a • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-263 D G G D S


    Original     		PDF SUM110N04-04 O-263 SUM110N04-04-E3 08-Apr-05 SUM110N04-04 SUM110N04-04-E3

    Untitled

    Abstract: No abstract text available
    Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D


    Original     		PDF SUM110P04-05 O-263 SUM110P04-05-E3 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    72194

    Abstract: No abstract text available
    Text: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 72194

    SUM110P08-11L-E3

    Abstract: SUM110P08-11L SUM110P08-11 SUM110P08_11L SUM110P08-11L rev
    Text: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L-E3 08-Apr-05 SUM110P08-11L-E3 SUM110P08-11L SUM110P08-11 SUM110P08_11L SUM110P08-11L rev

    Untitled

    Abstract: No abstract text available
    Text: SUM110N06-3m4L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0034 at VGS = 10 V 60 0.0041 at VGS = 4.5 V ID (A) • TrenchFET Power MOSFET • 100 % Rg Tested 110a RoHS COMPLIANT D TO-263 G G D S


    Original     		PDF SUM110N06-3m4L O-263 SUM110N06-3m4L-E3 11-Mar-11

    0 281 002 507

    Abstract: SUM110P08-11 SUM110P08-11 rev 51507
    Text: SUM110P08-11 New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b Qg (Typ) –80 0.0111@ VGS = –10 V –110 113 nC D TrenchFETr Power MOSFET APPLICATIONS D Automotive such as: – High Side Switch


    Original     		PDF SUM110P08-11 O-263 51507--Rev. 15-Aug-05 0 281 002 507 SUM110P08-11 SUM110P08-11 rev 51507

    11010

    Abstract: No abstract text available
    Text: SPICE Device Model SUM110N06-3m4L Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM110N06-3m4L 02-Jul-04 11010

    SUM110N04-03P

    Abstract: SUM110N04-03P-E3
    Text: SUM110N04-03P Vishay Siliconix New Product N-Channel 40-V D-S 175_C MOSFET FEATURES TrenchFETr Power MOSFET 175_C Junction Temperature New Package with Low Thermal Resistance Extremely Low Qgd WFETt Technology for Low Switching Losses D 100% Rg Tested D


    Original     		PDF SUM110N04-03P O-263 SUM110N04-03P-E3 08-Apr-05 SUM110N04-03P SUM110N04-03P-E3

    SUM110N04-05H

    Abstract: SUM110N04-05H-E3 73131
    Text: SUM110N04-05H Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0053 at VGS = 10 V 110 95 • TrenchFET Power MOSFET • 175 °C Junction Temperature • High Threshold Voltage at High Temperature


    Original     		PDF SUM110N04-05H O-263 SUM110N04-05H-E3 08-Apr-05 SUM110N04-05H SUM110N04-05H-E3 73131

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09-E3 08-Apr-05 SUM110N10-09 SUM110N10-09-E3

    313B

    Abstract: No abstract text available
    Text: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC


    Original     		PDF SUM110N04-2m1P O-263 SUM110N04-2m1P-E3 11-Mar-11 313B

    Untitled

    Abstract: No abstract text available
    Text: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC


    Original     		PDF SUM110N04-2m1P O-263 SUM110N04-2m1P-E3 11-Mar-11

    AN609

    Abstract: SUM110N03-03P
    Text: SUM110N03-03P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM110N03-03P AN609 22-Oct-07

    SUM110N02-03

    Abstract: SUM110N02-03-E3
    Text: SUM110N02-03 Vishay Siliconix N-Channel 20-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A)a 20 0.0026 at VGS = 10 V 110a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package High Threshold Voltage


    Original     		PDF SUM110N02-03 O-263 SUM110N02-03-E3 18-Jul-08 SUM110N02-03 SUM110N02-03-E3

    SUM110N06-04L

    Abstract: No abstract text available
    Text: SPICE Device Model SUM110N06-04L Vishay Siliconix N-Channel 60-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM110N06-04L 18-Jul-08 SUM110N06-04L

    SUM110N08-05

    Abstract: SUM110N08-05-E3
    Text: SUM110N08-05 Vishay Siliconix N-Channel 75-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.0048 at VGS = 10 V 110a • TrenchFET Power MOSFETS • Low Thermal Resistance Package Available RoHS* COMPLIANT APPLICATIONS


    Original     		PDF SUM110N08-05 O-263 SUM110N08-05-E3 18-Jul-08 SUM110N08-05 SUM110N08-05-E3

    SUM110N06-3M9H-E3

    Abstract: No abstract text available
    Text: SUM110N06-3m9H Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0039 at VGS = 10 V 110a 200 • • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package


    Original     		PDF SUM110N06-3m9H O-263 SUM110N06-3m9H-E3 18-Jul-08 SUM110N06-3M9H-E3

    7120

    Abstract: AN609 SUM110N04-04
    Text: SUM110N04-04_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM110N04-04 AN609 03-Mar-06 7120