SUM65N20 DATASHEET Search Results

SUM65N20 DATASHEET Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
HS9-26C31RH-T		Renesas Electronics Corporation	Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet
HS1-26C31RH-T		Renesas Electronics Corporation	Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet

SUM65N20 DATASHEET Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SPICE Device Model SUM65N20-30 www.vishay.com Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SUM65N20-30 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested	Original	PDF	SUM65N20-30 O-263 SUM65N20-30-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested	Original	PDF	SUM65N20-30 O-263 SUM65N20-30-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested	Original	PDF	SUM65N20-30 O-263 SUM65N20-30-E3 11-Mar-11
Untitled Abstract: No abstract text available Text: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested	Original	PDF	SUM65N20-30 O-263 SUM65N20-30-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested	Original	PDF	SUM65N20-30 O-263 SUM65N20-30-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12