Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUM90P10-19L www.vishay.com Vishay Siliconix P-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SUM90P10-19L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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sUM90P10-19L
Abstract: SUM90P10-19L-E3
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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Original
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
18-Jul-08
sUM90P10-19L
SUM90P10-19L-E3
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PDF
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74169
Abstract: 74169 datasheet data sheet 74169 sUM90P10-19L sum90p10
Text: SPICE Device Model SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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SUM90P10-19L
S-61262Rev.
24-Jul-06
74169
74169 datasheet
data sheet 74169
sUM90P10-19L
sum90p10
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PDF
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High voltage diode BY 509
Abstract: SUM90P10-19L Rev
Text: SUM90P10-19L New Product Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –100 ID rDS(on) (W) (A)b 0.019 @ VGS = –10 V –90 0.021 @ VGS = –4.5 V –85 Qg (Typ) 97 nC D TrenchFETr Power MOSFET APPLICATIONS RoHS D Automotive such as:
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Original
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SUM90P10-19L
O-263
SUM90P10-19L
08-Apr-05
High voltage diode BY 509
SUM90P10-19L Rev
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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Original
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SUM90P10-19L
Abstract: SUM90P10-19L-E3
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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Original
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
11-Mar-11
SUM90P10-19L
SUM90P10-19L-E3
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PDF
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74169
Abstract: 74169 datasheet data sheet 74169 SUM90P10-19L SUM90P10
Text: SPICE Device Model SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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SUM90P10-19L
18-Jul-08
74169
74169 datasheet
data sheet 74169
SUM90P10-19L
SUM90P10
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PDF
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SUM90P10-19L-E3
Abstract: sUM90P10-19L
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 rDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 97 nC S TO-263 G Drain Connected to Tab
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Original
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SUM90P10-19L
O-263
SUM90P10-19L-E3
18-Jul-08
SUM90P10-19L-E3
sUM90P10-19L
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 rDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 97 nC S TO-263 G Drain Connected to Tab
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Original
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SUM90P10-19L
O-263
SUM90P10-19L-E3
08-Apr-05
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PDF
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sum90p10-19l-e3
Abstract: No abstract text available
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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Original
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sum90p10-19l-e3
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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Original
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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sum90p10-19l-e3
Abstract: No abstract text available
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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Original
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
11-Mar-11
sum90p10-19l-e3
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 rDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ) 97 nC • TrenchFET Power MOSFET RoHS APPLICATIONS COMPLIANT • Automotive such as:
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Original
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SUM90P10-19L
O-263
SUM90P10-19L-E3
08-Apr-05
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PDF
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SUM90P10-19L
Abstract: SUM90P10-19L-E3 SUM90P10
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 rDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 97 nC S TO-263 G Drain Connected to Tab
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Original
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SUM90P10-19L
O-263
SUM90P10-19L-E3
08-Apr-05
SUM90P10-19L
SUM90P10-19L-E3
SUM90P10
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PDF
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