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    Untitled

    Abstract: No abstract text available
    Text: SUN0465I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =2.3Ω (Typ.) • Low gate charge: Qg=10nC (Typ.) • Low reverse transfer capacitance: Crss=4.7pF (Typ.) • RoHS compliant device


    Original     		SUN0465I2 SUN0465 03-DEC-13 KSD-T0W003-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUN0465F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =2.3Ω (Typ.) • Low gate charge: Qg=10nC (Typ.) • Low reverse transfer capacitance: Crss=4.7pF (Typ.) • RoHS compliant device


    Original     		SUN0465F SUN0465 O-220F-3L SDB20D45 03-DEC-13 KSD-T0O131-000 PDF