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    SUP25 Search Results

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    SUP25 Price and Stock

    AMTI Products SUP2598

    CONVEYOR BELT, SS
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    DigiKey SUP2598 1
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    Schneider Electric NSYRCSUP25

    2 19" BACK BRACKET 19" 250
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    DigiKey NSYRCSUP25 Box 1
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    RS NSYRCSUP25 Bulk 1 Weeks 1
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    Vishay Siliconix SUP25P10-138-GE3

    MOSFET N-CH 100V 16.3A TO220AB
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    DigiKey SUP25P10-138-GE3 Tube
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    Partex Marking Systems USA SUP25000DN0

    Braid; ØBraid : 20÷35mm; polyester; black; -55÷150°C; L: 10m; reel
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    TME SUP25000DN0 3 1
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    Partex Marking Systems USA SUP25000BN0

    Braid; ØBraid : 20÷35mm; polyester; black; -55÷150°C; L: 100m; reel
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    TME SUP25000BN0 1
    • 1 $170.81
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    SUP25 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP25P10-138-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 16.3A TO220AB Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SUP25P10-138 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.138 at VGS = - 10 V - 16.3 VDS (V) - 100 0.141 at VGS = - 7.5 V - 16.1 0.142 at VGS = - 6 V - 16.1 Qg (Typ.) 24 nC • TrenchFET Power MOSFET


    Original     		PDF SUP25P10-138 O-220AB SUP25P10-138-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUP25P10-138 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.138 at VGS = - 10 V - 16.3 VDS (V) - 100 0.141 at VGS = - 7.5 V - 16.1 0.142 at VGS = - 6 V - 16.1 Qg (Typ.) 24 nC • TrenchFET Power MOSFET


    Original     		PDF SUP25P10-138 O-220AB SUP25P10-138-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP25P10-138 www.vishay.com Vishay Siliconix P-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SUP25P10-138 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12