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    Vishay Siliconix SUP90N08-7M7P-E3

    MOSFET N-CH 75V 90A TO220AB
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    Vishay Siliconix SUP90N08-6M8P-E3

    MOSFET N-CH 75V 90A TO220AB
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    Vishay Siliconix SUP90N08-8M2P-E3

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    SUP90N08 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP90N08-06 Vishay Siliconix MOSFETs Original PDF
    SUP90N08-06 SPICE Device Model Vishay N-Channel 75-V (D-S) 175°C MOSFET Original PDF
    SUP90N08-4M8P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A TO220AB Original PDF
    SUP90N08-6M8P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A TO220AB Original PDF
    SUP90N08-7M7P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A TO220AB Original PDF
    SUP90N08-8M2P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A TO220AB Original PDF

    SUP90N08 Datasheets Context Search

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    74281

    Abstract: No abstract text available
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original     		PDF SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74281

    SUP90N08-6M8P

    Abstract: No abstract text available
    Text: SUP90N08-6m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0068 at VGS = 10 V 90d 75 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUP90N08-6m8P O-220AB SUP90N08-6m8P-E3 18-Jul-08 SUP90N08-6M8P

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 75 0.0082 at VGS = 10 V ID (A) 90 d • • • • Qg (Typ) 58 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Material categorization:


    Original     		PDF SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original     		PDF SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-6m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0068 at VGS = 10 V 90d 75 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUP90N08-6m8P 2002/95/EC O-220AB SUP90N08-6m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    74281

    Abstract: sup90n08-4m8p
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original     		PDF SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 11-Mar-11 74281 sup90n08-4m8p

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-6m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0068 at VGS = 10 V 90d 75 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUP90N08-6m8P 2002/95/EC O-220AB SUP90N08-6m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    74281

    Abstract: No abstract text available
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d d 0.006 at VGS = 8 V 90 0.0085 at VGS = 6 V 90d • TrenchFET Power MOSFETS • 175 °C Junction Temperature


    Original     		PDF SUP90N08-4m8P O-220AB SUP90N08-4m8P-E3 08-Apr-05 74281

    74281

    Abstract: sup90n08-4m8p
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)


    Original     		PDF SUP90N08-4m8P O-220AB SUP90N08-4m8P-E3 18-Jul-08 74281 sup90n08-4m8p

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original     		PDF SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    S8206

    Abstract: S-82069
    Text: SPICE Device Model SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SUP90N08-7m7P 18-Jul-08 S8206 S-82069

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-6m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0068 at VGS = 10 V 90d 75 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUP90N08-6m8P 2002/95/EC O-220AB SUP90N08-6m8P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original     		PDF SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 75 0.0082 at VGS = 10 V ID (A) 90 d • • • • Qg (Typ) 58 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Material categorization:


    Original     		PDF SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 75 0.0082 at VGS = 10 V ID (A) 90 d • • • • Qg (Typ) 58 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Material categorization:


    Original     		PDF SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    74355

    Abstract: sup90n08-4m8p
    Text: SPICE Device Model SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S 150°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP90N08-4m8P 18-Jul-08 74355 sup90n08-4m8p

    AN609

    Abstract: No abstract text available
    Text: SUP90N08-4m8P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP90N08-4m8P AN609 03-Jan-08

    ua 7809

    Abstract: 7809 transistor 7809 VOLTAGE sd 7809 SUP90N08-06
    Text: SPICE Device Model SUP90N08-06 Vishay Siliconix N-Channel 75-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP90N08-06 S-71518Rev. 23-Jul-07 ua 7809 7809 transistor 7809 VOLTAGE sd 7809 SUP90N08-06

    74281

    Abstract: No abstract text available
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original     		PDF SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 74281

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d


    Original     		PDF SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 75 0.0082 at VGS = 10 V ID (A) 90 d • • • • Qg (Typ) 58 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Material categorization:


    Original     		PDF SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original     		PDF SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 18-Jul-08

    74281

    Abstract: No abstract text available
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)


    Original     		PDF SUP90N08-4m8P O-220AB SUP90N08-4m8P-E3 08-Apr-05 74281

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0082 at VGS = 10 V 90d 58 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 11-Mar-11